Loading...

ESM3045AV

STMicroelectronics

ESM3045AV by STMicroelectronics

ESM3045AV by STMicroelectronics is a high-performance NPN Darlington BJT designed for power applications. It features a max VCEsat of 2V, supports up to 22A collector current, and operates at temperatures up to 150 °C. Ideal for efficient switching in industrial circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,527 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,527

-

-

-

-

Vyrian

USA . 3,079 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,079

-

-

-

-

Anansix

USA . 1,264 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,264

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 676 parts In-Stock

1+ parts

$0.453

100+ parts

-

1k+ parts

-

10k+ parts

$0.435

676

$0.453

-

-

$0.435

Northwest PG Solutions

USA . 1,198 parts In-Stock

1+ parts

$0.498

100+ parts

-

1k+ parts

-

10k+ parts

$0.439

1,198

$0.498

-

-

$0.439

IDEA Electronic Components Group

UK . 895 parts In-Stock

1+ parts

$0.848

100+ parts

-

1k+ parts

$0.763

10k+ parts

-

895

$0.848

-

$0.763

-

MKK Technologies

India . 1,815 parts In-Stock

1+ parts

$1.595

100+ parts

-

1k+ parts

-

10k+ parts

-

1,815

$1.595

-

-

-

DigiPath Technology Company

USA . 1,815 parts In-Stock

1+ parts

$1.595

100+ parts

-

1k+ parts

-

10k+ parts

-

1,815

$1.595

-

-

-

Corphita

USA . 2,348 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,348

-

-

-

-

Parana Technologies

USA . 1,450 parts In-Stock

1+ parts

-

100+ parts

$1.014

1k+ parts

-

10k+ parts

-

1,450

-

$1.014

-

-

Kepictronics

USA . 269 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

269

-

-

-

-

Assy Fe

Spain . 31 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

31

-

-

-

-

Overview

Unlock superior performance and reliability with the ESM3045AV from STMicroelectronics, a trusted leader in semiconductor innovation. This NPN Darlington power transistor delivers exceptional efficiency for demanding applications, from industrial drives to consumer electronics. With its robust design capable of handling high temperatures and power dissipation, the ESM3045AV promises longevity and stability, ensuring your projects run smoothly and effectively. Elevate your designs with STMicroelectronics' commitment to quality and performance!

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN configuration offers better switching characteristics and is widely used in digital and analog circuits, making this product versatile for various applications.

Configuration: DARLINGTON

The Darlington configuration provides high current gain, allowing for efficient amplification and making this transistor suitable for power applications.

Maximum Rise Time (tr): 4000 ns

A relatively long rise time is suitable for applications where high-speed switching is not critical, allowing for stable operation in various environments.

Maximum VCEsat: 2 V

The low VCEsat ensures minimal voltage drop during operation, which enhances the efficiency and reduces power loss in power management applications.

Package Shape: RECTANGULAR

The rectangular package shape facilitates efficient heat dissipation and easy integration into circuit boards, which is advantageous for space-constrained applications.

Maximum Fall Time (tf): 400 ns

A quick fall time allows for faster turn-off characteristics, improving overall performance in switching applications.

No. of Terminals: 4

Having four terminals allows for versatile connections and easier integration into complex circuits, enhancing the usability of the transistor.

Maximum Power Dissipation (Abs): 125 W

With a high power dissipation rating, this transistor can handle substantial loads, making it ideal for high-power applications.

Package Style (Meter): FLANGE MOUNT

Flange mount packaging provides robust mechanical support and better thermal management, ensuring reliable operation even in demanding environments.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this BJT to function efficiently in harsh conditions, expanding its application range.

Maximum Collector-Emitter Voltage: 450 V

A high VCE rating provides capability for use in high-voltage applications, ensuring the transistor can handle demanding electrical environments.

Transistor Element Material: SILICON

Silicon is known for its stability and reliability in electrical performance, making this transistor a dependable choice for various electronic applications.

Maximum Collector Current (IC): 22 A

The ability to handle a maximum collector current of 22 A ensures this BJT can be employed in applications that require substantial current flow, enhancing its usability.

Terminal Position: UPPER

Upper terminal positioning simplifies the layout for circuit designs and enhances the overall accessibility of the transistor during installation.

Case Connection: ISOLATED

An isolated case connection contributes to safety by preventing unintentional electrical contact, making this part suitable for sensitive applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ESM3045AV attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

450 V

Configuration:

Maximum Fall Time (tf):

400 ns

JESD-30 Code:

R-XUFM-X4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Rise Time (tr):

4000 ns

Sub-Category:

BIP General Purpose Power

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Maximum VCEsat:

2 V

Trade Compliance

ESM3045AV Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 6