Loading...

BUL213

STMicroelectronics

BUL213 by STMicroelectronics

BUL213 by STMicroelectronics is a NPN Power BJT with 600V VCE, 3A IC, and 0.9V VCEsat. Ideal for switching applications, it has a max power dissipation of 60W and operates up to 150 °C. The transistor's hFE is 16, making it suitable for various industrial uses.

Median Price

$1.406

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Infinite Electronics LLP

India . 12,900 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12,900

-

-

-

-

Vyrian

USA . 7,981 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,981

-

-

-

-

Electronic Expediters

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,000

-

-

-

-

Digiode

USA . 3,979 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,979

-

-

-

-

Anansix

USA . 1,409 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,409

-

-

-

-

Microfarads

USA . 1,142 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,142

-

-

-

-

MISTER SPROCKETS

USA . 998 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

998

-

-

-

-

Resion

USA . 200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

200

-

-

-

-

Bristol Electronics

USA . 185 parts In-Stock

1+ parts

-

100+ parts

$1.406

1k+ parts

$0.844

10k+ parts

-

185

-

$1.406

$0.844

-

Q Components

USA . 91 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

91

-

-

-

-

J & M Industries LLC

USA . 36 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

36

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,973 parts In-Stock

1+ parts

$1.505

100+ parts

-

1k+ parts

$1.355

10k+ parts

-

1,973

$1.505

-

$1.355

-

MKK Technologies

India . 1,425 parts In-Stock

1+ parts

$2.830

100+ parts

-

1k+ parts

-

10k+ parts

-

1,425

$2.830

-

-

-

DigiPath Technology Company

USA . 1,425 parts In-Stock

1+ parts

$2.830

100+ parts

-

1k+ parts

-

10k+ parts

-

1,425

$2.830

-

-

-

AZTECH Wire

Italy . 156 parts In-Stock

1+ parts

$15.120

100+ parts

-

1k+ parts

-

10k+ parts

-

156

$15.120

-

-

-

Infinite Electronics LLP (Excess)

. 10,008 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,008

-

-

-

-

Authorized Procurement Solutions

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,000

-

-

-

-

A-Z Elektronik GmbH

Germany . 5,105 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,105

-

-

-

-

Alle Elektronik GmbH

Germany . 3,403 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,403

-

-

-

-

Perfect Parts

USA . 3,110 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,110

-

-

-

-

Corphita

USA . 2,763 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,763

-

-

-

-

Parana Technologies

USA . 2,245 parts In-Stock

1+ parts

-

100+ parts

$1.800

1k+ parts

-

10k+ parts

-

2,245

-

$1.800

-

-

Kepictronics

USA . 2,089 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,089

-

-

-

-

Northwest PG Solutions

USA . 1,314 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,314

-

-

-

-

Native Components

USA . 917 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

917

-

-

-

-

Overview

Upgrade your power management systems with the BUL213 from STMicroelectronics, a leading manufacturer in the industry. This Power Bipolar Junction Transistor (BJT) offers reliable switching capabilities with a low VCEsat of 0.9V and a maximum collector current of 3A. Ideal for various applications, this NPN transistor provides a robust solution for your power control needs. Trust in the quality and performance of STMicroelectronics to enhance your projects and drive efficiency. Experience the value and benefits that the BUL213 brings to your designs today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and are versatile for various applications.

Configuration: SINGLE

Simplifies circuit design and makes it easier to control and manage the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing reliable and efficient performance in those scenarios.

Maximum VCEsat: 0.9 V

Low VCEsat minimizes power loss and improves efficiency in switching operations.

Package Shape: RECTANGULAR

Allows for easy mounting and integration into existing circuit layouts.

Terminal Form: THROUGH-HOLE

Enables easy soldering and secure connection within the circuit board.

No. of Terminals: 3

Simple and straightforward setup with only three terminals to connect.

Maximum Power Dissipation (Abs): 60 W

High power dissipation capability allows for handling of heavy loads and prevents overheating.

Package Style (Meter): FLANGE MOUNT

Facilitates mounting and installation of the transistor in various configurations.

Maximum Power Dissipation Ambient: 60 W

Maintains the transistor's performance and reliability even in high-temperature environments.

Minimum DC Current Gain (hFE): 16

Ensures consistent and stable amplification of currents in the circuit.

Maximum Operating Temperature: 150 °C

Wide temperature range allows for operation in both normal and high-temperature conditions.

Maximum Collector-Emitter Voltage: 600 V

High collector-emitter voltage rating makes it suitable for various power applications.

Transistor Element Material: SILICON

Silicon material offers reliability and efficiency in transistor performance.

Maximum Collector Current (IC): 3 A

Capable of handling high collector currents for power applications.

Maximum Turn Off Time (toff): 6420 ns

Fast turn-off time enhances the switching speed and efficiency of the transistor.

Terminal Finish: Matte Tin (Sn)

Matte tin finish provides good soldering properties for reliable electrical connections.

Terminal Position: SINGLE

Simplified terminal design for easy connection and integration in circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL213 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Minimum DC Current Gain (hFE):

16

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

60 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

6420 ns

Maximum VCEsat:

.9 V

Trade Compliance

BUL213 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 3