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BUL26D

STMicroelectronics

BUL26D by STMicroelectronics

BUL26D by STMicroelectronics is a NPN Power BJT with 300V VCE, 4A IC, and 60W Ptot. Ideal for switching applications, it features a single configuration with built-in diode in a plastic/epoxy package suitable for flange mount installations. Operating up to 150 °C, it offers a min hFE of 15 and matte tin terminal finish.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,702 parts In-Stock

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4,702

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Digiode

USA . 2,402 parts In-Stock

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2,402

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Anansix

USA . 1,920 parts In-Stock

1+ parts

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1,920

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 952 parts In-Stock

1+ parts

$1.351

100+ parts

-

1k+ parts

$1.216

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952

$1.351

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$1.216

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MKK Technologies

India . 1,873 parts In-Stock

1+ parts

$2.540

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1,873

$2.540

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DigiPath Technology Company

USA . 1,873 parts In-Stock

1+ parts

$2.540

100+ parts

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1,873

$2.540

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Corphita

USA . 4,674 parts In-Stock

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4,674

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Northwest PG Solutions

USA . 2,140 parts In-Stock

1+ parts

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2,140

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Parana Technologies

USA . 1,915 parts In-Stock

1+ parts

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100+ parts

$1.615

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1,915

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$1.615

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Native Components

USA . 288 parts In-Stock

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288

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Overview

Elevate your power switching applications with the BUL26D by STMicroelectronics. Crafted with precision and quality, this NPN Power Bipolar Junction Transistor offers a seamless performance like no other. Whether you're looking to optimize efficiency or enhance reliability, this transistor is designed to exceed expectations. With a maximum collector-emitter voltage of 300V and a maximum collector current of 4A, the BUL26D delivers unparalleled power dissipation of 60W in a compact package. Trust STMicroelectronics to deliver cutting-edge technology that empowers your projects to reach new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection for the transistor, making it a reliable choice for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering versatile functionality for different circuit designs.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode adds extra functionality to the transistor, allowing for more efficient switching and protection against reverse current flow.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers high performance and reliability in controlling electrical circuits.

Package Shape: RECTANGULAR

The rectangular shape of the package provides easy mounting and integration into circuit boards, making it convenient for assembly.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer secure connections and ease of soldering, ensuring stable and reliable electrical connections.

Maximum Power Dissipation (Abs): 60 W

With a high maximum power dissipation, this transistor can handle high power loads without overheating, ensuring long-term reliability.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides additional mechanical support and heat dissipation for the transistor, enhancing its performance in various environments.

Minimum DC Current Gain (hFE): 15

A minimum DC current gain of 15 ensures proper amplification of input signals, making this transistor suitable for a wide range of applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without performance degradation, ensuring reliable operation in demanding conditions.

Maximum Collector-Emitter Voltage: 300 V

The high maximum collector-emitter voltage rating makes this transistor suitable for high-voltage applications, providing robust performance in various circuit designs.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making them a common choice for a wide range of electronic devices and circuits.

Maximum Collector Current (IC): 4 A

With a maximum collector current of 4 A, this transistor can handle moderate current loads, making it suitable for various switching and amplification tasks.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and corrosion resistance, ensuring reliable electrical connections and long-term performance.

Terminal Position: SINGLE

The single terminal position simplifies installation and wiring, allowing for easy integration into circuit boards and electrical systems.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL26D attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

300 V

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BUL26D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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