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BULK128D-B

STMicroelectronics

BULK128D-B by STMicroelectronics

STMicroelectronics BULK128D-B is a NPN Power BJT with VCEsat of 1.5V, IC of 4A, and hFE of 8. Ideal for switching applications, it has a max VCE of 400V and Ptot of 55W in a plastic/epoxy package with matte tin finish.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Whistler Technology

UK . 22,120 parts In-Stock

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Vyrian

USA . 13,185 parts In-Stock

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Digiode

USA . 2,970 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 2,086 parts In-Stock

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Anansix

USA . 1,863 parts In-Stock

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IDEA Electronic Components Group

UK . 1,906 parts In-Stock

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$1.618

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$1.456

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$1.618

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MKK Technologies

India . 494 parts In-Stock

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$3.043

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$3.043

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DigiPath Technology Company

USA . 494 parts In-Stock

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$3.043

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AZTECH Wire

Italy . 420 parts In-Stock

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$17.460

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Ampacity Inc.

Singapore . 556 parts In-Stock

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$45.050

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QUARKTWIN TECHNOLOGY LTD

USA . 22,826 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,112 parts In-Stock

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Authorized Procurement Solutions

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Parana Technologies

USA . 2,195 parts In-Stock

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Assy Fe

Spain . 2,086 parts In-Stock

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Northwest PG Solutions

USA . 1,898 parts In-Stock

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Corphita

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Metaverse IC Inc.

Canada . 202 parts In-Stock

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Native Components

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Overview

Unleash the power of innovation with the BULK128D-B by STMicroelectronics. Designed with precision and quality in mind, this Power Bipolar Junction Transistor offers unmatched reliability and performance for a wide range of switching applications. With a maximum operating temperature of 150 °C and a collector-emitter voltage of 400V, this NPN transistor is built to handle even the toughest challenges. Whether you're looking to optimize your power management system or enhance your circuit design, the BULK128D-B is the perfect choice for driving efficiency and maximizing output. Elevate your projects to new heights with STMicroelectronics' cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliable performance and longevity.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications and offer good amplification capabilities.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and protects against reverse voltage spikes.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient operation.

Maximum VCEsat: 1.5 V

Low VCEsat helps reduce power losses and improves efficiency in switching circuits.

Maximum Power Dissipation (Abs): 55 W

High power dissipation rating allows the transistor to handle large amounts of power without overheating.

Maximum Collector-Emitter Voltage: 400 V

High VCE rating makes this transistor suitable for high voltage applications.

Maximum Collector Current (IC): 4 A

Able to handle high collector currents, making it versatile for various applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BULK128D-B attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

8

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

55 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

1.5 V

Trade Compliance

BULK128D-B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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