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BULK381

STMicroelectronics

BULK381 by STMicroelectronics

BULK381 by STMicroelectronics is an NPN BJT designed for switching applications, featuring a max power dissipation of 60W and a collector-emitter voltage of 400V. It operates at up to 150 °C with a min DC current gain (hFE) of 8. Ideal for efficient power management in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,977 parts In-Stock

1+ parts

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3,977

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Vyrian

USA . 3,228 parts In-Stock

1+ parts

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3,228

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Anansix

USA . 360 parts In-Stock

1+ parts

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360

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 114 parts In-Stock

1+ parts

$0.491

100+ parts

-

1k+ parts

$0.442

10k+ parts

-

114

$0.491

-

$0.442

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MKK Technologies

India . 2,185 parts In-Stock

1+ parts

$0.924

100+ parts

-

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-

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2,185

$0.924

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-

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DigiPath Technology Company

USA . 2,185 parts In-Stock

1+ parts

$0.924

100+ parts

-

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-

10k+ parts

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2,185

$0.924

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-

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Corphita

USA . 1,563 parts In-Stock

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1,563

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Native Components

USA . 370 parts In-Stock

1+ parts

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370

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Parana Technologies

USA . 91 parts In-Stock

1+ parts

-

100+ parts

$0.587

1k+ parts

-

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91

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$0.587

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Northwest PG Solutions

USA . 54 parts In-Stock

1+ parts

-

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54

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Overview

Unlock unparalleled performance with the BULK381 from STMicroelectronics, a leader in innovative semiconductor solutions. This robust NPN power transistor excels in high-efficiency switching applications, delivering exceptional reliability and versatility across diverse sectors. With a compact design and impressive thermal management, it’s engineered to meet your toughest demands. Elevate your projects with STMicroelectronics' commitment to quality and innovation—experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy in the package body ensures durability and resistance to environmental factors, making this BJT suitable for various applications.

Polarity or Channel Type: NPN

Being an NPN transistor, it is ideal for high-speed switching applications, offering efficient current flow and amplification.

Configuration: SINGLE

The single configuration simplifies circuit design and is well-suited for standalone applications.

Transistor Application: SWITCHING

Designed specifically for switching, this transistor ensures fast response times, making it perfect for digital circuits.

Package Shape: RECTANGULAR

The rectangular package shape facilitates easier integration into printed circuit boards (PCBs), maximizing space efficiency.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides a strong mechanical connection, ensuring reliability in high-stress environments.

No. of Terminals: 3

With three terminals, this transistor allows for versatile connections, enabling flexible circuit configurations.

Maximum Power Dissipation (Abs): 60 W

A high maximum power dissipation of 60 W means this BJT can handle significant loads without overheating, ensuring robust operation in demanding applications.

Package Style (Meter): IN-LINE

An in-line package style aids in compact designs, allowing multiple components to be aligned neatly on PCBs.

Minimum DC Current Gain (hFE): 8

A minimum DC current gain of 8 ensures that the transistor can effectively amplify signals, making it suitable for a range of electronic circuits.

Maximum Operating Temperature: 150 °C

The capability to operate at temperatures up to 150 °C makes this BJT suitable for high-temperature applications, enhancing its reliability in harsh environments.

Maximum Collector-Emitter Voltage: 400 V

A maximum collector-emitter voltage of 400 V allows this transistor to be used in high-voltage applications, broadening its usability.

Transistor Element Material: SILICON

Using silicon as the element material provides excellent electrical properties, contributing to the overall performance and efficiency of the transistor.

Maximum Collector Current (IC): 5 A

With a maximum collector current of 5 A, this BJT can handle substantial loads, making it suitable for power applications.

Terminal Finish: MATTE TIN

The matte tin finish on the terminals provides good solderability, ensuring reliable connections during assembly.

Terminal Position: SINGLE

The single terminal position enhances ease of use, simplifying the mounting process on PCBs.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BULK381 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

8

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BULK381 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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