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BULK380D

STMicroelectronics

BULK380D by STMicroelectronics

BULK380D by STMicroelectronics is a NPN Power BJT with 400V VCE, 5A IC, and 60W Ptot. Ideal for switching applications, it features a single configuration with built-in diode in a plastic/epoxy package. With hFE of 7 and operating up to 150 °C, it offers reliable performance in various power control systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 1,415 parts In-Stock

1+ parts

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1,415

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Vyrian

USA . 999 parts In-Stock

1+ parts

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999

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Digiode

USA . 404 parts In-Stock

1+ parts

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404

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 66 parts In-Stock

1+ parts

$1.424

100+ parts

-

1k+ parts

$1.282

10k+ parts

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66

$1.424

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$1.282

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MKK Technologies

India . 2,360 parts In-Stock

1+ parts

$2.678

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2,360

$2.678

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DigiPath Technology Company

USA . 2,360 parts In-Stock

1+ parts

$2.678

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2,360

$2.678

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Corphita

USA . 3,346 parts In-Stock

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3,346

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Northwest PG Solutions

USA . 1,736 parts In-Stock

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1,736

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Parana Technologies

USA . 1,160 parts In-Stock

1+ parts

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100+ parts

$1.703

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1,160

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$1.703

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Native Components

USA . 795 parts In-Stock

1+ parts

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795

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Overview

Experience superior quality and reliability with the BULK380D by STMicroelectronics, a leading manufacturer in the industry. This Power Bipolar Junction Transistor (BJT) offers seamless switching applications with a maximum VCEsat of 1V, ensuring optimal performance. With a built-in diode and a maximum collector-emitter voltage of 400V, this transistor provides unmatched value and efficiency. Whether you're in automotive, industrial, or consumer electronics, the BULK380D delivers exceptional power dissipation of 60W and a minimum DC current gain of 7, making it the perfect choice for your next project. Trust STMicroelectronics for cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: NPN

Ideal for use in low-power applications and amplification circuits.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and saves space by integrating a diode within the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance.

Maximum VCEsat: 1 V

Low VCEsat minimizes power loss and improves efficiency in switching operations.

Package Shape: RECTANGULAR

Easy to mount and integrate into electronic systems.

Terminal Form: THROUGH-HOLE

Simplified installation and connection process for through-hole mounting on PCBs.

No. of Terminals: 3

Standard number of terminals for simplified circuit connections.

Maximum Power Dissipation (Abs): 60 W

High power dissipation capability for handling heavy loads without overheating.

Package Style (Meter): FLANGE MOUNT

Allows for secure and stable mounting in electronic systems.

Maximum Power Dissipation Ambient: 60 W

Maintains stable performance even in high-temperature environments.

Minimum DC Current Gain (hFE): 7

Ensures proper amplification of signals with a minimum gain of 7.

Maximum Operating Temperature: 150 °C

Wide temperature range allows for operation in various environmental conditions.

Maximum Collector-Emitter Voltage: 400 V

Handles high voltage applications with a maximum voltage rating of 400V.

Transistor Element Material: SILICON

Provides reliable performance and long-lasting stability for the transistor.

Maximum Collector Current (IC): 5 A

High collector current rating for handling heavy loads and high-power applications.

Terminal Finish: MATTE TIN

Provides a corrosion-resistant finish for the terminals, ensuring long-term reliability.

Terminal Position: SINGLE

Standard single terminal position for easy integration into electronic circuits.

Case Connection: ISOLATED

Prevents electrical interference and ensures proper functioning of the transistor in circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BULK380D attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

ISOLATED

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

7

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

60 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

1 V

Trade Compliance

BULK380D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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