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BULK128D-A

STMicroelectronics

BULK128D-A by STMicroelectronics

STMicroelectronics BULK128D-A is a NPN Power BJT with VCEsat of 1.5V, IC of 4A, and hFE of 8. Ideal for switching applications, it has a max power dissipation of 55W at 150 °C. The package is rectangular with through-hole terminals in matte tin finish.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,939 parts In-Stock

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4,939

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Anansix

USA . 1,275 parts In-Stock

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1,275

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Digiode

USA . 855 parts In-Stock

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855

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IDEA Electronic Components Group

UK . 1,921 parts In-Stock

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$0.743

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$0.669

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1,921

$0.743

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$0.669

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MKK Technologies

India . 748 parts In-Stock

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$1.398

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748

$1.398

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DigiPath Technology Company

USA . 748 parts In-Stock

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$1.398

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748

$1.398

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Northwest PG Solutions

USA . 1,785 parts In-Stock

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1,785

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Corphita

USA . 414 parts In-Stock

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414

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Parana Technologies

USA . 327 parts In-Stock

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$0.889

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Native Components

USA . 84 parts In-Stock

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Overview

Discover the powerful BULK128D-A by STMicroelectronics, a top-notch Power Bipolar Junction Transistor designed for switching applications. With a maximum VCEsat of 1.5V and a maximum collector-emitter voltage of 400V, this NPN transistor offers unparalleled performance. Its robust design, featuring a single configuration with built-in diode, ensures reliability and efficiency. Whether you need to control high power loads or regulate voltage in your circuits, this transistor is the ideal solution. Trust STMicroelectronics for cutting-edge technology and superior quality components that deliver exceptional results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and helps protect the transistor from external elements, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistor configuration allows for easy integration into existing circuits, enhancing the versatility of the product.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode simplifies circuit design and provides protection against reverse voltage, improving the overall reliability of the product.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast switching speeds and low saturation voltage, making it ideal for high-efficiency circuits.

Maximum VCEsat: 1.5 V

Low VCEsat value indicates minimal power loss in the on-state, improving the energy efficiency of the product.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy installation and space-saving placement on circuit boards, optimizing layout design.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer secure connections and facilitate manual soldering, ensuring reliable performance in various environments.

No. of Terminals: 3

Three terminals provide necessary connections for proper transistor operation, enabling easy integration into circuit designs.

Maximum Power Dissipation (Abs): 55 W

High power dissipation capability allows the transistor to handle heavy loads without overheating, ensuring long-term reliability.

Package Style (Meter): IN-LINE

In-line package style offers compatibility with standard mounting techniques, enhancing ease of use and accessibility during installation.

Maximum Power Dissipation Ambient: 55 W

With a maximum ambient power dissipation of 55 W, this transistor can withstand high-temperature environments, enhancing its durability.

Minimum DC Current Gain (hFE): 8

Minimum DC current gain ensures stable amplification of input signals, enabling precise control and reliable performance in various applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150 °C allows the transistor to operate in extreme conditions, expanding its usability in demanding environments.

Maximum Collector-Emitter Voltage: 400 V

High collector-emitter voltage rating of 400 V ensures compatibility with a wide range of circuit designs, enhancing the versatility of the product.

Transistor Element Material: SILICON

Silicon material offers stable and reliable transistor performance, ensuring consistent operation and long-term durability.

Maximum Collector Current (IC): 4 A

High collector current rating of 4 A enables the transistor to handle high current loads, making it suitable for various power applications.

Terminal Finish: MATTE TIN

Matte tin finish provides corrosion resistance and facilitates soldering, ensuring secure connections and long-term reliability.

Terminal Position: SINGLE

Single terminal position simplifies installation and connections, reducing potential points of failure and enhancing overall product reliability.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BULK128D-A attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

8

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

55 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

1.5 V

Trade Compliance

BULK128D-A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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