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BUL138FP

STMicroelectronics

BUL138FP by STMicroelectronics

BUL138FP by STMicroelectronics is a NPN Power BJT with 400V VCEO, 5A IC, and 33W Ptot. Ideal for switching applications, it has a min hFE of 8 and operates up to 150 °C. The package style is flange mount with through-hole terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,510 parts In-Stock

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5,510

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Digiode

USA . 3,547 parts In-Stock

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3,547

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Anansix

USA . 757 parts In-Stock

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757

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Electronic Expediters

USA . 400 parts In-Stock

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400

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Distributors (Availability)

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Native Components

USA . 280 parts In-Stock

1+ parts

$0.439

100+ parts

-

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$0.422

280

$0.439

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$0.422

Northwest PG Solutions

USA . 180 parts In-Stock

1+ parts

$0.483

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-

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$0.426

180

$0.483

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$0.426

IDEA Electronic Components Group

UK . 1,643 parts In-Stock

1+ parts

$0.673

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$0.606

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1,643

$0.673

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$0.606

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MKK Technologies

India . 1,139 parts In-Stock

1+ parts

$1.266

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1,139

$1.266

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DigiPath Technology Company

USA . 1,139 parts In-Stock

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$1.266

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1,139

$1.266

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AZTECH Wire

Italy . 810 parts In-Stock

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$13.570

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810

$13.570

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Component Stockers USA

USA . 255 parts In-Stock

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$99.990

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255

$99.990

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Perfect Parts

USA . 9,968 parts In-Stock

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9,968

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A-Z Elektronik GmbH

Germany . 5,714 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,809 parts In-Stock

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Kepictronics

USA . 2,990 parts In-Stock

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2,990

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Parana Technologies

USA . 2,114 parts In-Stock

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$0.805

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$0.805

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Corphita

USA . 1,990 parts In-Stock

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1,990

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Overview

Upgrade your power systems with the BUL138FP from STMicroelectronics, a leading manufacturer known for high-quality components. This Power Bipolar Junction Transistor (BJT) is perfect for switching applications, offering a maximum collector-emitter voltage of 400V and a maximum collector current of 5A. With a package style of flange mount and matte tin terminal finish, this NPN transistor provides reliable performance at a maximum operating temperature of 150 °C. Trust STMicroelectronics to deliver superior products that meet your power needs efficiently and effectively.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, increasing its durability and resistance to environmental conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this transistor versatile in its applications.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to use in various electronic projects.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient power control and management.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering onto circuit boards, making it user-friendly for DIY electronics enthusiasts.

Maximum Power Dissipation (Abs): 33 W

Can handle high power dissipation, enabling it to be used in applications that require power handling capabilities.

Package Style (Meter): FLANGE MOUNT

Allows for secure mounting and efficient heat dissipation, enhancing the overall performance and reliability of the transistor.

Minimum DC Current Gain (hFE): 8

Ensures stable and reliable amplification of current, contributing to the overall efficiency of the transistor.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, making it suitable for various industrial and automotive applications.

Maximum Collector-Emitter Voltage: 400 V

Capable of handling high voltage levels, expanding its usability in different electronic circuits and systems.

Transistor Element Material: SILICON

Silicon transistors offer good performance and reliability, making this product a dependable choice for electronic projects.

Maximum Collector Current (IC): 5 A

Can handle relatively high current levels, making it suitable for applications that require power switching capabilities.

Terminal Finish: MATTE TIN

Provides a reliable and durable finish for the terminals, ensuring good solderability and long-lasting connections.

Terminal Position: SINGLE

Simplifies circuit layout and connection, making it easy to integrate into electronic designs.

Case Connection: ISOLATED

Helps prevent short circuits and ensures the transistor operates safely and reliably in different circuit configurations.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL138FP attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

8

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BUL138FP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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