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2STF2220

STMicroelectronics

2STF2220 by STMicroelectronics

2STF2220 by STMicroelectronics is a PNP BJT transistor with 1.4W power dissipation, hFE of 75, and 20V VCE. Ideal for switching applications in small outline packages, operating up to 150 °C. Suitable for surface mount designs requiring high collector current of 1.5A.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,954 parts In-Stock

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2,954

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Anansix

USA . 1,023 parts In-Stock

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1,023

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Digiode

USA . 174 parts In-Stock

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174

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Distributors (Availability)

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Native Components

USA . 557 parts In-Stock

1+ parts

$0.167

100+ parts

-

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-

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$0.160

557

$0.167

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$0.160

Northwest PG Solutions

USA . 1,529 parts In-Stock

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$0.183

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-

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$0.162

1,529

$0.183

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$0.162

IDEA Electronic Components Group

UK . 1,367 parts In-Stock

1+ parts

$1.025

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$0.922

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1,367

$1.025

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$0.922

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MKK Technologies

India . 1,053 parts In-Stock

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$1.927

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1,053

$1.927

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DigiPath Technology Company

USA . 1,053 parts In-Stock

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$1.927

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1,053

$1.927

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AZTECH Wire

Italy . 204 parts In-Stock

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$14.320

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204

$14.320

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Kepictronics

USA . 27,860 parts In-Stock

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27,860

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A-Z Elektronik GmbH

Germany . 8,500 parts In-Stock

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8,500

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Corphita

USA . 3,300 parts In-Stock

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3,300

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Perfect Parts

USA . 2,420 parts In-Stock

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2,420

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Parana Technologies

USA . 1,530 parts In-Stock

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$1.225

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1,530

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$1.225

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Overview

Upgrade your electronic projects with the 2STF2220 by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers top-quality Power Bipolar Junction Transistors (BJT) like this PNP transistor for switching applications. With a maximum collector current of 1.5A and a small outline package style, this transistor offers high performance in a compact design. Trust STMicroelectronics for reliable components that enhance the efficiency and functionality of your circuits. Elevate your projects with the 2STF2220 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and helps protect the transistor from external elements, making it a reliable choice for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for high-speed switching applications, making this transistor suitable for efficient and responsive circuit operation.

Configuration: SINGLE

The single configuration simplifies the design and integration of this transistor into electronic circuits, reducing complexity and potential failure points.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers reliable performance and efficiency in controlling electrical signals.

Surface Mount: YES

Being surface mountable, this transistor can be easily mounted on PCBs, saving space and enabling mass production of electronic devices.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient placement and orientation on a circuit board, enhancing overall functionality and ease of assembly.

Maximum Power Dissipation (Abs): 1.4 W

With a high maximum power dissipation, this transistor can handle significant power levels without overheating, ensuring long-term reliability in operation.

Minimum DC Current Gain (hFE): 75

The high minimum DC current gain ensures stable and predictable amplification of signals in the circuit, improving overall performance and accuracy.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without sacrificing performance, making it suitable for demanding environments.

Maximum Collector-Emitter Voltage: 20 V

The high maximum collector-emitter voltage rating provides a wide operating range, allowing this transistor to be used in a variety of voltage-sensitive applications.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and performance, ensuring the durability and stability of this transistor.

Maximum Collector Current (IC): 1.5 A

With a high maximum collector current rating, this transistor can handle large current flows, making it suitable for power-hungry applications.

Terminal Finish: MATTE TIN

The matte tin finish on the terminals improves solderability and conductivity, ensuring a secure and stable connection in the circuit.

Terminal Position: SINGLE

The single terminal position simplifies the installation and connection of this transistor, reducing the chances of wiring errors and enhancing overall reliability.

Case Connection: COLLECTOR

The case connection at the collector terminal facilitates easy and efficient circuit design, enabling smoother integration and operation in electronic systems.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2STF2220 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

75

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2STF2220 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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