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2STF1340

STMicroelectronics

2STF1340 by STMicroelectronics

2STF1340 by STMicroelectronics is an NPN BJT designed for switching applications. It features a max power dissipation of 1.4W, a collector current of up to 3A, and operates at temperatures up to 150 °C. Its compact surface mount design makes it ideal for space-constrained circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Chip Stock

USA . 19,270 parts In-Stock

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Prism Electronics

USA . 7,502 parts In-Stock

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Vyrian

USA . 6,257 parts In-Stock

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Anansix

USA . 2,601 parts In-Stock

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2,601

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LIBRA Elektronik GmbH

Germany . 1,775 parts In-Stock

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Digiode

USA . 446 parts In-Stock

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446

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Native Components

USA . 337 parts In-Stock

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$0.123

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$0.118

337

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$0.118

Northwest PG Solutions

USA . 2,372 parts In-Stock

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$0.135

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$0.119

2,372

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$0.119

IDEA Electronic Components Group

UK . 1,011 parts In-Stock

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$1.803

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$1.623

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$1.803

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$1.623

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MKK Technologies

India . 337 parts In-Stock

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$3.391

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337

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DigiPath Technology Company

USA . 337 parts In-Stock

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$3.391

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Ampacity Inc.

Singapore . 1,129 parts In-Stock

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$4.050

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AZTECH Wire

Italy . 1,097 parts In-Stock

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$20.450

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Metaverse IC Inc.

Canada . 306,000 parts In-Stock

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RC Electronics

USA . 138,668 parts In-Stock

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Perfect Parts

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QUARKTWIN TECHNOLOGY LTD

USA . 7,578 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,880 parts In-Stock

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Authorized Procurement Solutions

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Corphita

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A-Z Elektronik GmbH

Germany . 3,000 parts In-Stock

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Kepictronics

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Parana Technologies

USA . 1,903 parts In-Stock

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$2.156

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Overview

Unleash the power of efficiency with the 2STF1340 from STMicroelectronics! This robust NPN transistor excels in switching applications, offering outstanding reliability and performance for your electronic designs. With a compact surface mount package and impressive thermal management, it’s perfect for high-demand environments. Trust in STMicroelectronics' legacy of innovation to elevate your projects, ensuring seamless integration and superior durability that translates into long-lasting value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and protection against environmental factors, making this transistor reliable for a variety of applications.

Polarity or Channel Type: NPN

As an NPN transistor, it provides high-speed switching capabilities and is suitable for a wide range of electronic circuits.

Configuration: SINGLE

The single configuration allows for easy integration in circuits without taking up significant board space.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can efficiently control and manage current in electronic devices.

Surface Mount: YES

Being surface mount compatible facilitates automated assembly and supports compact PCB designs.

Package Shape: RECTANGULAR

The rectangular package shape enhances space utilization on PCBs, making it easier to layout complex circuits.

Terminal Form: FLAT

Flat terminals are advantageous for ensuring reliable electrical connections and ease of soldering during assembly.

No. of Terminals: 3

With three terminals, this transistor provides the necessary connections for emitter, collector, and base while maintaining a simple design.

Maximum Power Dissipation (Abs): 1.4 W

A maximum power dissipation of 1.4W indicates efficient performance, making this transistor suitable for moderate power applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style minimizes the footprint on a PCB, allowing for more compact electronic designs.

Minimum DC Current Gain (hFE): 180

With a minimum DC current gain of 180, this transistor ensures good amplification for low input currents, thus enhancing circuit performance.

Maximum Operating Temperature: 150 °C

Operating at a maximum temperature of 150 °C indicates that this transistor remains stable and reliable even under high-temperature conditions.

Maximum Collector-Emitter Voltage: 40 V

A maximum collector-emitter voltage of 40V provides versatility in different circuit applications, accommodating a range of voltage levels.

Transistor Element Material: SILICON

Using silicon as the semiconductor material enhances the performance characteristics, such as thermal stability and electrical efficiency.

Maximum Collector Current (IC): 3 A

The ability to handle a maximum collector current of 3A allows this transistor to drive loads effectively in various applications.

Terminal Position: SINGLE

The single terminal position design simplifies the layout and installation process in circuits.

Case Connection: COLLECTOR

Having the collector as the case connection aids in effective heat dissipation, enhancing the overall thermal management of the device.

Nominal Transition Frequency (fT): 100 MHz

A nominal transition frequency of 100 MHz allows for high-speed switching, making this transistor ideal for RF applications and fast switching circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2STF1340 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

180

JESD-30 Code:

R-PSSO-F3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2STF1340 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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