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2STF2340

STMicroelectronics

2STF2340 by STMicroelectronics

2STF2340 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 1.4 W, a collector current of 3 A, and operates up to 150 °C. Its compact surface mount design makes it ideal for space-constrained circuits.

Median Price

$1.125

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,258 parts In-Stock

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-

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3,258

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Bristol Electronics

USA . 1,997 parts In-Stock

1+ parts

-

100+ parts

$1.125

1k+ parts

$0.630

10k+ parts

$0.594

1,997

-

$1.125

$0.630

$0.594

Dan-Mar Components

USA . 1,997 parts In-Stock

1+ parts

-

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1,997

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Anansix

USA . 1,975 parts In-Stock

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1,975

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Digiode

USA . 808 parts In-Stock

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808

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,299 parts In-Stock

1+ parts

$0.792

100+ parts

-

1k+ parts

$0.713

10k+ parts

-

1,299

$0.792

-

$0.713

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MKK Technologies

India . 471 parts In-Stock

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$1.490

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471

$1.490

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DigiPath Technology Company

USA . 471 parts In-Stock

1+ parts

$1.490

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471

$1.490

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Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$2.028

100+ parts

$1.845

1k+ parts

$1.663

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-

50

$2.028

$1.845

$1.663

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AZTECH Wire

Italy . 148 parts In-Stock

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$21.450

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148

$21.450

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Kepictronics

USA . 19,590 parts In-Stock

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Futuretech Components

Singapore . 19,570 parts In-Stock

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Perfect Parts

USA . 11,511 parts In-Stock

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A-Z Elektronik GmbH

Germany . 8,500 parts In-Stock

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Infinite Electronics LLP (Excess)

. 3,801 parts In-Stock

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Formix International (Excess)

India . 2,198 parts In-Stock

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Parana Technologies

USA . 1,943 parts In-Stock

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$0.947

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1,943

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$0.947

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Corphita

USA . 1,018 parts In-Stock

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1,018

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Northwest PG Solutions

USA . 467 parts In-Stock

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467

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Native Components

USA . 299 parts In-Stock

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299

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Overview

Elevate your designs with the 2STF2340 from STMicroelectronics, a powerful PNP bipolar junction transistor that excels in switching applications. Crafted with precision, this compact surface-mount solution offers exceptional performance and reliability even under high temperatures. Trust in STMicroelectronics' legacy of innovation to deliver quality components that enhance efficiency and longevity in your projects—perfect for automotive, industrial, and consumer electronics. Experience unmatched value and performance!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures a lightweight and durable package, enhancing the reliability and thermal performance of the transistor.

Polarity or Channel Type: PNP

Being a PNP transistor allows for more flexible circuit designs, particularly in applications requiring high side switching.

Configuration: SINGLE

A single configuration simplifies circuit design and integration, making it suitable for a wide range of applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides efficient performance in digital and analog circuits.

Surface Mount: YES

Surface mount technology enables compact designs and easier integration into automated assembly processes.

Package Shape: RECTANGULAR

The rectangular shape enhances space efficiency on printed circuit boards (PCBs), making it ideal for compact electronic devices.

Terminal Form: FLAT

Flat terminals allow for better electrical contact and easier handling during assembly, improving overall reliability.

No. of Terminals: 4

Four terminals facilitate versatile connections and extensive functionality within the circuit.

Maximum Power Dissipation (Abs): 1.4 W

A power dissipation of 1.4 W indicates the ability to handle significant power levels, making it suitable for various medium-power applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style supports high-density designs, allowing for more components to be used within a limited space.

Minimum DC Current Gain (hFE): 200

A minimum current gain of 200 ensures effective amplification of signals, enhancing the efficiency of analog circuits.

Maximum Operating Temperature: 150 °C

With a high operating temperature limit, this transistor can withstand demanding thermal conditions, ensuring reliable performance in various environments.

Maximum Collector-Emitter Voltage: 40 V

A voltage rating of 40 V allows for safe operation in applications with moderate voltage levels, making it versatile for different uses.

Transistor Element Material: SILICON

Silicon as the element material provides a good balance of performance and cost, making it a commonly preferred choice in semiconductor devices.

Maximum Collector Current (IC): 3 A

With a maximum collector current of 3 A, this transistor accommodates robust current loads, suitable for switching and control applications.

Terminal Position: DUAL

Dual terminal positioning aids in flexible layout designs and simplifies connection patterns on PCBs.

Case Connection: COLLECTOR

Collector case connection provides a direct path for current flow, optimizing circuit layout and reducing parasitic effects.

Nominal Transition Frequency (fT): 100 MHz

A transition frequency of 100 MHz enables fast switching speeds, making it especially suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2STF2340 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2STF2340 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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