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2STF1525

STMicroelectronics

2STF1525 by STMicroelectronics

2STF1525 by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector current of 5 A, a power dissipation of 1.4 W, and operates up to 150 °C. Its compact surface mount design ensures efficient performance in electronic circuits.

Median Price

$0.154

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,328 parts In-Stock

1+ parts

-

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$0.154

1,328

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-

$0.154

Distributors (In-Stock)

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Vyrian

USA . 95 parts In-Stock

1+ parts

$0.170

100+ parts

-

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95

$0.170

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Nova Conductors

Japan . 450 parts In-Stock

1+ parts

$0.204

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450

$0.204

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Digiode

USA . 3,849 parts In-Stock

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3,849

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Anansix

USA . 2,073 parts In-Stock

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2,073

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Distributors (Availability)

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Native Components

USA . 484 parts In-Stock

1+ parts

$0.074

100+ parts

-

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-

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$0.071

484

$0.074

-

-

$0.071

Northwest PG Solutions

USA . 1,778 parts In-Stock

1+ parts

$0.081

100+ parts

-

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$0.072

1,778

$0.081

-

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$0.072

Ampacity Inc.

Singapore . 1,061 parts In-Stock

1+ parts

$0.145

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1,061

$0.145

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IDEA Electronic Components Group

UK . 239 parts In-Stock

1+ parts

$0.812

100+ parts

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$0.731

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239

$0.812

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$0.731

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MKK Technologies

India . 1,356 parts In-Stock

1+ parts

$1.528

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1,356

$1.528

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DigiPath Technology Company

USA . 1,356 parts In-Stock

1+ parts

$1.528

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1,356

$1.528

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Component Stockers USA

USA . 752 parts In-Stock

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$99.990

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752

$99.990

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A-Z Elektronik GmbH

Germany . 5,500 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,578 parts In-Stock

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1,578

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Parana Technologies

USA . 1,397 parts In-Stock

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$0.971

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1,397

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$0.971

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Corphita

USA . 1,318 parts In-Stock

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1,318

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Overview

Unlock unparalleled performance in your electronic designs with the 2STF1525 from STMicroelectronics. Renowned for its exceptional quality and reliability, this NPN power transistor is perfect for efficient switching applications. With a robust design that withstands high temperatures and delivers impressive power dissipation, it ensures your systems run smoothly and effectively. Choose the 2STF1525 for unmatched value, performance, and versatility in any project!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This lightweight and durable material provides excellent protection and reliability for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are known for their speed and are widely used in amplifier and switching applications, making them a versatile choice.

Configuration: SINGLE

The single configuration is suitable for compact designs and simplifies circuit layouts, making it ideal for cost-sensitive applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can efficiently control current flow in various electronic devices.

Surface Mount: YES

Surface mount technology allows for automated assembly, reducing manufacturing costs and improving PCB design flexibility.

Package Shape: RECTANGULAR

The rectangular shape optimizes space on the PCB and allows for efficient thermal management, important for high-power applications.

Terminal Form: FLAT

Flat terminals improve soldering reliability and ensure better electrical contact, enhancing the performance of the transistor.

No. of Terminals: 3

With three terminals, this transistor provides essential connections for input, output, and collector, simplifying circuit design.

Maximum Power Dissipation (Abs): 1.4 W

This high power dissipation capability allows for reliable operation under demanding conditions, making it suitable for power-sensitive applications.

Package Style (Meter): SMALL OUTLINE

The small outline package saves PCB space while providing necessary performance, ideal for portable devices.

Minimum DC Current Gain (hFE): 100

A minimum hFE of 100 ensures sufficient amplification for driving loads in applications, making it a strong choice for signal amplification.

Maximum Operating Temperature: 150 °C

The ability to operate at high temperatures improves reliability and suitability for harsh environments in industrial applications.

Maximum Collector-Emitter Voltage: 25 V

This voltage rating is suitable for a range of low to moderate power applications, ensuring flexibility in circuit design.

Transistor Element Material: SILICON

Silicon is the standard for transistors, providing a good balance of performance and cost-effectiveness for various applications.

Maximum Collector Current (IC): 5 A

The ability to handle 5 A of collector current makes this transistor capable of driving substantial loads, ideal for power switching applications.

Terminal Finish: Matte Tin (Sn)

The matte tin finish ensures excellent solderability and resistance to corrosion, enhancing reliability in electronic assemblies.

Terminal Position: SINGLE

A single terminal position simplifies PCB layout and reduces the chance of assembly errors during manufacturing.

Case Connection: COLLECTOR

Direct collector connection enhances performance and reduces parasitic capacitance, beneficial for high-frequency applications.

Maximum Time At Peak Reflow Temperature (s): 30

With a peak reflow temperature time of 30 seconds, this transistor is optimized for modern soldering techniques, ensuring strong connections.

Peak Reflow Temperature °C: 260

A high reflow temperature tolerance allows for compatibility with various manufacturing processes, ensuring a robust assembly.

Nominal Transition Frequency (fT): 120 MHz

The high transition frequency indicates this transistor can be used in high-speed applications, making it effective for RF and fast-switching circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2STF1525 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2STF1525 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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