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BULD118D-1

STMicroelectronics

BULD118D-1 by STMicroelectronics

BULD118D-1 by STMicroelectronics is a NPN Power BJT with 400V VCE, 2A IC, and 20W Ptot. Ideal for switching applications, it features a built-in diode and operates up to 150 °C. Package: PLASTIC/EPOXY, RECTANGULAR shape with TIN finish in an IN-LINE style.

Median Price

$0.447

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 18,895 parts In-Stock

1+ parts

$0.241

100+ parts

$0.228

1k+ parts

$0.218

10k+ parts

$0.213

18,895

$0.241

$0.228

$0.218

$0.213

Element14

Singapore . 18,895 parts In-Stock

1+ parts

$0.589

100+ parts

$0.500

1k+ parts

$0.433

10k+ parts

$0.402

18,895

$0.589

$0.500

$0.433

$0.402

Newark

USA . 18,895 parts In-Stock

1+ parts

$1.370

100+ parts

-

1k+ parts

$0.506

10k+ parts

$0.410

18,895

$1.370

-

$0.506

$0.410

Avnet

USA . 58,725 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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58,725

-

-

-

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EBV Elektronik

Germany . 12,000 parts In-Stock

1+ parts

-

100+ parts

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12,000

-

-

-

-

Chip1Stop

Japan . 5,475 parts In-Stock

1+ parts

-

100+ parts

$0.447

1k+ parts

$0.271

10k+ parts

$0.243

5,475

-

$0.447

$0.271

$0.243

Verical

USA . 1,300 parts In-Stock

1+ parts

-

100+ parts

$0.188

1k+ parts

-

10k+ parts

-

1,300

-

$0.188

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,650 parts In-Stock

1+ parts

$0.709

100+ parts

-

1k+ parts

-

10k+ parts

-

3,650

$0.709

-

-

-

TME

Poland . 66 parts In-Stock

1+ parts

$1.100

100+ parts

$0.636

1k+ parts

-

10k+ parts

-

66

$1.100

$0.636

-

-

LIBRA Elektronik GmbH

Germany . 25,798 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

25,798

-

-

-

-

IBS Electronics

USA . 5,925 parts In-Stock

1+ parts

-

100+ parts

$0.209

1k+ parts

$0.204

10k+ parts

$0.190

5,925

-

$0.209

$0.204

$0.190

Vyrian

USA . 5,157 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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5,157

-

-

-

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Anansix

USA . 738 parts In-Stock

1+ parts

-

100+ parts

-

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738

-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 5,969 parts In-Stock

1+ parts

$0.556

100+ parts

$0.337

1k+ parts

$0.242

10k+ parts

$0.232

5,969

$0.556

$0.337

$0.242

$0.232

Corphita

USA . 1,173 parts In-Stock

1+ parts

$0.671

100+ parts

-

1k+ parts

-

10k+ parts

-

1,173

$0.671

-

-

-

IDEA Electronic Components Group

UK . 404 parts In-Stock

1+ parts

$1.264

100+ parts

-

1k+ parts

$1.138

10k+ parts

-

404

$1.264

-

$1.138

-

MKK Technologies

India . 760 parts In-Stock

1+ parts

$2.377

100+ parts

-

1k+ parts

-

10k+ parts

-

760

$2.377

-

-

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DigiPath Technology Company

USA . 760 parts In-Stock

1+ parts

$2.377

100+ parts

-

1k+ parts

-

10k+ parts

-

760

$2.377

-

-

-

Microchip USA

USA . 7,848 parts In-Stock

1+ parts

$6.435

100+ parts

-

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-

10k+ parts

-

7,848

$6.435

-

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AZTECH Wire

Italy . 1,027 parts In-Stock

1+ parts

$10.320

100+ parts

-

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1,027

$10.320

-

-

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iodParts Technologies Inc.

India . 36,000 parts In-Stock

1+ parts

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36,000

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Perfect Parts

USA . 30,714 parts In-Stock

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30,714

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Kepictronics

USA . 13,000 parts In-Stock

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13,000

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-

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Eastek

USA . 4,725 parts In-Stock

1+ parts

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4,725

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GreenTree Electronics

Israel . 1,732 parts In-Stock

1+ parts

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1,732

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Parana Technologies

USA . 1,693 parts In-Stock

1+ parts

-

100+ parts

$1.511

1k+ parts

-

10k+ parts

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1,693

-

$1.511

-

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

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100+ parts

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1,000

-

-

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Native Components

USA . 745 parts In-Stock

1+ parts

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745

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-

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Northwest PG Solutions

USA . 693 parts In-Stock

1+ parts

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693

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-

Overview

Enhance your electronic projects with the BULD118D-1 from STMicroelectronics, a leading manufacturer known for top-quality components. This Power Bipolar Junction Transistor offers reliable switching capabilities, making it ideal for a wide range of applications. With its built-in diode and high power dissipation capacity, this NPN transistor maximizes performance while ensuring durability. Trust in STMicroelectronics to deliver value and efficiency with every product, including the BULD118D-1. Elevate your projects today with this top-of-the-line component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable for long-term use.

Polarity or Channel Type: NPN

NPN transistors are commonly used in digital and analog circuits, offering fast switching speeds and low saturation voltage.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for easier circuit design and protection against reverse voltage, making the transistor versatile for various applications.

Transistor Application: SWITCHING

Designed for switching applications, ensuring smooth and efficient operation in electronic devices.

Maximum VCEsat: 1.5 V

Low VCEsat reduces power loss and heat generation in the transistor, improving overall efficiency.

Package Shape: RECTANGULAR

Rectangular shape makes it easier to mount and integrate into existing circuit designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering during assembly.

No. of Terminals: 3

Simple 3-terminal setup for easy integration into circuits.

Maximum Power Dissipation (Abs): 20 W

High power dissipation capacity allows the transistor to handle heavy loads without overheating.

Package Style (Meter): IN-LINE

In-line package style saves space and simplifies PCB layout.

Maximum Power Dissipation Ambient: 20 W

High ambient power dissipation rating ensures reliable performance in various temperature conditions.

Minimum DC Current Gain (hFE): 8

Good DC current gain for amplification and signal processing applications.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for reliable performance in various environments.

Maximum Collector-Emitter Voltage: 400 V

High collector-emitter voltage rating allows for high voltage applications.

Transistor Element Material: SILICON

Silicon material ensures high switching speeds and low power consumption.

Maximum Collector Current (IC): 2 A

High collector current rating for handling heavy loads in circuits.

Maximum Turn Off Time (toff): 4900 ns

Fast turn off time for efficient switching performance.

Terminal Finish: TIN

Tin terminal finish for good solderability and corrosion resistance.

Terminal Position: SINGLE

Single terminal position for easy installation and connection in circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BULD118D-1 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-251AA

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

20 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

4900 ns

Maximum VCEsat:

1.5 V

Trade Compliance

BULD118D-1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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