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BULD128D-1-A

STMicroelectronics

BULD128D-1-A by STMicroelectronics

STMicroelectronics BULD128D-1-A is a NPN Power BJT with VCEsat of 1.5V, IC of 4A, and hFE of 8. Ideal for switching applications due to its built-in diode and max VCE of 400V. With a max power dissipation of 35W and operating temp up to 150 °C, it's suitable for various high-power electronic designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,829 parts In-Stock

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2,829

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Digiode

USA . 1,766 parts In-Stock

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1,766

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Vyrian

USA . 198 parts In-Stock

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198

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Distributors (Availability)

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Native Components

USA . 490 parts In-Stock

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$0.481

100+ parts

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$0.462

490

$0.481

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$0.462

Northwest PG Solutions

USA . 1,462 parts In-Stock

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$0.529

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$0.467

1,462

$0.529

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$0.467

IDEA Electronic Components Group

UK . 1,763 parts In-Stock

1+ parts

$1.814

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$1.633

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1,763

$1.814

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$1.633

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MKK Technologies

India . 1,172 parts In-Stock

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$3.412

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1,172

$3.412

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DigiPath Technology Company

USA . 1,172 parts In-Stock

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$3.412

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1,172

$3.412

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Corphita

USA . 4,249 parts In-Stock

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4,249

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Parana Technologies

USA . 805 parts In-Stock

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$2.169

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805

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$2.169

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Overview

Upgrade your power management solutions with the BULD128D-1-A by STMicroelectronics. This high-quality Power Bipolar Junction Transistor offers exceptional performance in switching applications, providing a maximum VCEsat of 1.5V and a maximum collector current of 4A. With a reliable manufacturer like STMicroelectronics, you can trust in the durability and efficiency of this product. Whether you're looking to optimize your circuit design or enhance your electronic devices, the BULD128D-1-A delivers unmatched value and benefits to meet your power needs. Experience the advantages of superior technology with this NPN transistor and take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material makes the transistor lightweight and durable, perfect for a variety of applications.

Polarity or Channel Type: NPN

The NPN configuration allows for easy integration into existing circuit designs, making it versatile and compatible with a wide range of systems.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design by eliminating the need for an external diode, saving space and reducing costs.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast switching speeds and high efficiency, making it ideal for controlling electrical currents.

Surface Mount: YES

Being surface mountable, this transistor can be easily mounted on printed circuit boards, saving space and simplifying the manufacturing process.

Maximum VCEsat: 1.5 V

The low VCE saturation voltage of 1.5V ensures minimal power loss and high efficiency in switching operations.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement and secure mounting on circuit boards, ensuring reliable performance.

Terminal Form: GULL WING

The gull wing terminal form provides a strong mechanical connection and facilitates easy soldering during assembly.

No. of Terminals: 2

With only 2 terminals, this transistor is easy to install and reduces the chances of wiring mistakes, simplifying the installation process.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board, making it suitable for compact electronic devices and applications.

Maximum Power Dissipation Ambient: 35 W

With a maximum power dissipation of 35W, this transistor can handle high power loads without overheating, ensuring reliability and long-term performance.

Minimum DC Current Gain (hFE): 8

The minimum DC current gain of 8 ensures stable and consistent amplification of electrical signals, making it reliable for various applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows this transistor to perform in harsh environments and applications requiring elevated temperatures.

Maximum Collector-Emitter Voltage: 400 V

With a maximum collector-emitter voltage rating of 400V, this transistor can withstand high voltage levels, ensuring safe and reliable operation in demanding conditions.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and performance, making this transistor a durable and dependable choice for various applications.

Maximum Collector Current (IC): 4 A

The maximum collector current rating of 4A allows this transistor to handle high current loads, making it suitable for power-hungry applications.

Terminal Position: SINGLE

With a single terminal position, this transistor is easy to connect and install, reducing the risk of wiring errors and ensuring proper functionality.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BULD128D-1-A attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

35 W

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

1.5 V

Trade Compliance

BULD128D-1-A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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