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BULD138-1

STMicroelectronics

BULD138-1 by STMicroelectronics

BULD138-1 by STMicroelectronics is a NPN Power BJT with 400V VCEO, 5A IC, and 30W Ptot. Ideal for switching applications, it has a min hFE of 8 and operates up to 150 °C. Packaged in PLASTIC/EPOXY, it features THROUGH-HOLE terminals in an IN-LINE style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,141 parts In-Stock

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4,141

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Digiode

USA . 2,518 parts In-Stock

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2,518

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Anansix

USA . 1,563 parts In-Stock

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1,563

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,637 parts In-Stock

1+ parts

$0.592

100+ parts

-

1k+ parts

$0.533

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1,637

$0.592

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$0.533

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MKK Technologies

India . 2,136 parts In-Stock

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$1.114

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2,136

$1.114

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DigiPath Technology Company

USA . 2,136 parts In-Stock

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$1.114

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2,136

$1.114

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Corphita

USA . 2,411 parts In-Stock

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2,411

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Parana Technologies

USA . 858 parts In-Stock

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$0.708

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858

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$0.708

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Northwest PG Solutions

USA . 839 parts In-Stock

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839

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Native Components

USA . 712 parts In-Stock

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712

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Overview

Elevate your power switching applications with the BULD138-1 from STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics ensures top-quality products that guarantee reliability and efficiency. Ideal for various switching tasks, this Power Bipolar Junction Transistor offers a maximum collector-emitter voltage of 400V and a maximum collector current of 5A, making it a versatile choice for your projects. Trust in STMicroelectronics to deliver superior performance that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: NPN

Commonly used and versatile type of bipolar junction transistor, allowing for easy integration into various circuit designs.

Configuration: SINGLE

Simplified setup with only one transistor in the package, making it easier to use and reducing the chances of circuit errors.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring efficient and reliable performance in those scenarios.

Package Shape: RECTANGULAR

Efficient use of space and easier integration into circuit boards due to the rectangular shape.

Terminal Form: THROUGH-HOLE

Easy to solder and provides a strong mechanical connection to the circuit board, ensuring stability during operation.

Maximum Power Dissipation (Abs): 30 W

Capable of handling high power levels, making it suitable for applications that require high power dissipation.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation, increasing reliability in harsh environments.

Maximum Collector-Emitter Voltage: 400 V

Capable of handling high voltage levels, making it suitable for applications that require high voltage switching.

Maximum Collector Current (IC): 5 A

Capable of handling high currents, making it suitable for applications that require high current switching.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BULD138-1 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-251

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BULD138-1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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