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BULD128DB-1

STMicroelectronics

BULD128DB-1 by STMicroelectronics

BULD128DB-1 by STMicroelectronics is a NPN Power BJT with 400V VCE, 4A IC, and 35W Ptot. Ideal for switching applications, it features a built-in diode and hFE of 8. The package is rectangular with through-hole terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,802 parts In-Stock

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2,802

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Anansix

USA . 703 parts In-Stock

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703

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Digiode

USA . 140 parts In-Stock

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140

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Distributors (Availability)

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Native Components

USA . 899 parts In-Stock

1+ parts

$0.083

100+ parts

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$0.080

899

$0.083

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$0.080

Northwest PG Solutions

USA . 1,893 parts In-Stock

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$0.091

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$0.081

1,893

$0.091

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$0.081

IDEA Electronic Components Group

UK . 482 parts In-Stock

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$0.694

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$0.624

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482

$0.694

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$0.624

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MKK Technologies

India . 1,549 parts In-Stock

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$1.304

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1,549

$1.304

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DigiPath Technology Company

USA . 1,549 parts In-Stock

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$1.304

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1,549

$1.304

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Corphita

USA . 4,683 parts In-Stock

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4,683

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Parana Technologies

USA . 1,827 parts In-Stock

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$0.829

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1,827

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$0.829

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Overview

Unlock the power of innovation with the BULD128DB-1 by STMicroelectronics. This Power Bipolar Junction Transistor (BJT) offers reliable performance and efficiency in switching applications. With a maximum collector-emitter voltage of 400V and a maximum power dissipation of 35W, this NPN transistor is designed to meet your high-power needs. Whether you're working on industrial automation, motor control, or power supplies, trust STMicroelectronics to deliver quality components that drive your projects forward. Experience the value and benefits of the BULD128DB-1 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode enhances the performance of the transistor, offering improved efficiency in switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and efficient operation.

Maximum VCEsat: 1.5 V

Low VCEsat results in lower power dissipation and improved efficiency in high-speed switching circuits.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and installation in various electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections, suitable for applications that require robust components.

No. of Terminals: 3

Simplifies circuit design and integration, providing straightforward connectivity options.

Maximum Power Dissipation (Abs): 35 W

High power dissipation capability allows for reliable operation in demanding conditions.

Package Style (Meter): IN-LINE

In-line package style offers space-saving benefits, ideal for compact electronic designs.

Maximum Power Dissipation Ambient: 35 W

Can dissipate heat effectively in ambient conditions, ensuring stable performance over a wide temperature range.

Minimum DC Current Gain (hFE): 8

Provides sufficient current gain for amplification purposes, ensuring accurate signal processing.

Maximum Operating Temperature: 150 °C

Withstands high temperatures, making it suitable for industrial and automotive applications.

Maximum Collector-Emitter Voltage: 400 V

High collector-emitter voltage rating allows for operation in high-voltage circuits.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability in electronic components.

Maximum Collector Current (IC): 4 A

High collector current rating enables the transistor to handle higher current loads.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead finish provides good solderability and conductivity for reliable connections.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection processes.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BULD128DB-1 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-251

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

35 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

1.5 V

Trade Compliance

BULD128DB-1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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