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BULD39DT4

STMicroelectronics

BULD39DT4 by STMicroelectronics

BULD39DT4 by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max power dissipation of 35W, operates up to 150 °C, and supports a collector-emitter voltage of 450V. Ideal for compact electronic designs with surface mount capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,686 parts In-Stock

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2,686

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Vyrian

USA . 2,574 parts In-Stock

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Anansix

USA . 347 parts In-Stock

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347

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Native Components

USA . 556 parts In-Stock

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$0.314

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$0.301

556

$0.314

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$0.301

IDEA Electronic Components Group

UK . 1,989 parts In-Stock

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$0.316

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$0.284

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Northwest PG Solutions

USA . 1,242 parts In-Stock

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$0.345

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$0.304

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$0.345

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$0.304

MKK Technologies

India . 1,729 parts In-Stock

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$0.593

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1,729

$0.593

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DigiPath Technology Company

USA . 1,729 parts In-Stock

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$0.593

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$0.593

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Kepictronics

USA . 27,860 parts In-Stock

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Perfect Parts

USA . 3,360 parts In-Stock

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Corphita

USA . 2,203 parts In-Stock

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Assy Fe

Spain . 1,500 parts In-Stock

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Parana Technologies

USA . 375 parts In-Stock

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$0.377

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$0.377

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Overview

Elevate your projects with the BULD39DT4 from STMicroelectronics, a leading name in semiconductor innovation. This high-performance NPN power bipolar junction transistor excels in switching applications, ensuring reliability and efficiency for a variety of electronic designs. With its compact, surface-mount package, the BULD39DT4 is perfect for space-constrained environments while delivering robust power handling capabilities. Trust in STMicroelectronics to provide quality and performance that enhances your designs and drives success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy construction offers durability and protection, ensuring the transistor can withstand various environmental conditions.

Polarity or Channel Type: NPN

NPN transistors are versatile for switching applications, making them suitable for a wide range of electronic circuits and configurations.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies designs by integrating protection against reverse polarity, enhancing reliability.

Transistor Application: SWITCHING

Designed for switching, this transistor efficiently handles on/off control, making it ideal for power management in various devices.

Surface Mount: YES

Being surface mount allows for compact designs and easier assembly on PCBs, catering to modern electronic applications.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space utilization on PCBs, facilitating better layout and design flexibility.

Terminal Form: GULL WING

Gull wing terminals provide excellent soldering characteristics, ensuring strong and reliable electrical connections.

No. of Terminals: 2

With only two terminals, this transistor simplifies connections in circuits, allowing for easy integration and reduced complexity.

Maximum Power Dissipation (Abs): 35 W

A high maximum power dissipation rating indicates the transistor can handle significant power load, making it suitable for high-performance applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style enables compact product designs, ideal for space-constrained applications.

Minimum DC Current Gain (hFE): 4

A minimum current gain of 4 ensures good amplification characteristics, which is important for various switching applications.

Maximum Operating Temperature: 150 °C

A high operating temperature limit allows this transistor to function reliably in demanding thermal environments.

Maximum Collector-Emitter Voltage: 450 V

The high voltage rating makes this transistor suitable for applications that require handling high voltage operations.

Transistor Element Material: SILICON

Silicon is a widely used semiconductor material, providing good performance, thermal stability, and frequency handling capabilities.

Maximum Collector Current (IC): 4 A

The ability to handle up to 4 A of collector current makes it suitable for significant load applications, enhancing its versatility.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides excellent corrosion resistance, ensuring longevity and reliability in connections.

Terminal Position: SINGLE

A single terminal position simplifies the mounting process on PCBs, reducing assembly time and enhancing productivity.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BULD39DT4 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

450 V

Minimum DC Current Gain (hFE):

4

JEDEC-95 Code:

TO-252AA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BULD39DT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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