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BULD3P5T4

STMicroelectronics

BULD3P5T4 by STMicroelectronics

BULD3P5T4 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 22W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for compact electronic designs with surface mount capabilities.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,246 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

-

4,246

-

-

-

-

Vyrian

USA . 3,737 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,737

-

-

-

-

Anansix

USA . 1,355 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,355

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 516 parts In-Stock

1+ parts

$0.248

100+ parts

-

1k+ parts

-

10k+ parts

$0.238

516

$0.248

-

-

$0.238

Northwest PG Solutions

USA . 2,359 parts In-Stock

1+ parts

$0.273

100+ parts

-

1k+ parts

-

10k+ parts

$0.240

2,359

$0.273

-

-

$0.240

IDEA Electronic Components Group

UK . 128 parts In-Stock

1+ parts

$1.687

100+ parts

-

1k+ parts

$1.519

10k+ parts

-

128

$1.687

-

$1.519

-

Ampacity Inc.

Singapore . 1,531 parts In-Stock

1+ parts

$2.050

100+ parts

-

1k+ parts

-

10k+ parts

-

1,531

$2.050

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-

-

MKK Technologies

India . 60 parts In-Stock

1+ parts

$3.173

100+ parts

-

1k+ parts

-

10k+ parts

-

60

$3.173

-

-

-

DigiPath Technology Company

USA . 60 parts In-Stock

1+ parts

$3.173

100+ parts

-

1k+ parts

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10k+ parts

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60

$3.173

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-

-

Corphita

USA . 1,932 parts In-Stock

1+ parts

-

100+ parts

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1,932

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-

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Parana Technologies

USA . 172 parts In-Stock

1+ parts

-

100+ parts

$2.017

1k+ parts

-

10k+ parts

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172

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$2.017

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Overview

Unlock the power of innovation with the BULD3P5T4 from STMicroelectronics—a top-tier PNP power transistor designed for seamless switching applications. Renowned for its exceptional quality and reliability, STMicroelectronics ensures that this component delivers outstanding performance in the most demanding environments. With a compact design and superior thermal management, it enhances efficiency in consumer electronics, automotive systems, and industrial machinery, providing unmatched value to customers seeking robust solutions. Elevate your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures durability and protection against environmental factors, making this BJT suitable for various applications.

Polarity or Channel Type: PNP

Being a PNP type transistor, it is optimal for use in applications where high-side switching is required.

Configuration: SINGLE

The single configuration allows for simple circuit designs and ease of integration into existing systems.

Transistor Application: SWITCHING

Designed for switching applications, this BJT can efficiently control high loads, enhancing overall circuit performance.

Surface Mount: YES

Surface mount capability allows for compact designs and automated assembly, reducing production costs.

Package Shape: RECTANGULAR

The rectangular shape optimizes space usage on PCBs, enabling more efficient layout and design.

Terminal Form: GULL WING

Gull wing terminals provide easy soldering and improve mechanical stability on printed circuit boards.

No. of Terminals: 2

With only two terminals, this BJT minimizes complexity in the circuit, making it user-friendly for designers.

Maximum Power Dissipation (Abs): 22 W

The ability to dissipate up to 22 W of power allows for high-performance applications without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style ensures a smaller footprint, ideal for space-constrained applications.

Minimum DC Current Gain (hFE): 4

A minimum hFE of 4 indicates reliable amplification capabilities, ensuring effective current control for various applications.

Maximum Operating Temperature: 150 °C

This BJT's maximum operating temperature of 150 °C expands its usability in high-temperature environments.

Maximum Collector-Emitter Voltage: 400 V

With a high collector-emitter voltage rating of 400 V, this transistor can handle significant voltage stresses in circuits.

Transistor Element Material: SILICON

Silicon as the element material ensures better performance and reliability in switching applications compared to other materials.

Maximum Collector Current (IC): 3 A

The capacity to handle up to 3 A of collector current makes this BJT versatile for various high-power applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish enhances solderability and ensures strong electrical connections after soldering.

Terminal Position: SINGLE

The single terminal position simplifies the layout and connection process in circuit designs.

Maximum Time At Peak Reflow Temperature (s): 30

A peak reflow time of 30 seconds ensures safer soldering processes that prevent damage to the device.

Peak Reflow Temperature °C: 260

Withstanding peak reflow temperatures of 260 °C ensures compatibility with modern soldering techniques and processes.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BULD3P5T4 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

4

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BULD3P5T4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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