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BULD116D

STMicroelectronics

BULD116D by STMicroelectronics

BULD116D by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 200V, a current gain (hFE) of 8, and operates up to 150 °C. Its compact through-hole design ensures easy integration in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,331 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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3,331

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-

-

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Digiode

USA . 670 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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670

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Anansix

USA . 478 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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478

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,688 parts In-Stock

1+ parts

$1.108

100+ parts

-

1k+ parts

$0.997

10k+ parts

-

1,688

$1.108

-

$0.997

-

MKK Technologies

India . 491 parts In-Stock

1+ parts

$2.083

100+ parts

-

1k+ parts

-

10k+ parts

-

491

$2.083

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DigiPath Technology Company

USA . 491 parts In-Stock

1+ parts

$2.083

100+ parts

-

1k+ parts

-

10k+ parts

-

491

$2.083

-

-

-

Native Components

USA . 75 parts In-Stock

1+ parts

$1,119.463

100+ parts

$1,097.074

1k+ parts

$1,085.879

10k+ parts

$1,074.684

75

$1,119.463

$1,097.074

$1,085.879

$1,074.684

Northwest PG Solutions

USA . 827 parts In-Stock

1+ parts

$1,231.409

100+ parts

-

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-

10k+ parts

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827

$1,231.409

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Parana Technologies

USA . 2,040 parts In-Stock

1+ parts

-

100+ parts

$1.324

1k+ parts

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2,040

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$1.324

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Corphita

USA . 231 parts In-Stock

1+ parts

-

100+ parts

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231

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Overview

Elevate your projects with the BULD116D from STMicroelectronics, a trusted leader in semiconductor innovation. This versatile NPN power transistor excels in switching applications, offering reliability and efficiency for diverse designs. With its robust construction and built-in diode, it ensures seamless performance even in demanding conditions. Choose the BULD116D to unlock superior quality and durability that enhance your product's value and longevity.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides excellent protection against environmental factors, ensuring durability and reliability in various applications.

Polarity or Channel Type: NPN

NPN configuration allows for efficient switching operations and is commonly preferred in digital circuits, making it versatile for a range of applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a built-in diode enhances the transistor’s functionality by providing reverse polarity protection and improving circuit design efficiency.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor is ideal for controlling high current loads in electronic circuits.

Package Shape: RECTANGULAR

The rectangular package shape efficiently utilizes space on PCBs, allowing for compact designs without sacrificing performance.

Terminal Form: THROUGH-HOLE

Through-hole terminals ensure robust mechanical and electrical connections, ideal for prototyping and high-stress applications.

No. of Terminals: 3

Three terminals provide the necessary connections for collector, emitter, and base, facilitating easy integration into circuits.

Package Style (Meter): IN-LINE

In-line package style enables easy handling and assembly in automated manufacturing processes, improving production efficiency.

Minimum DC Current Gain (hFE): 8

A minimum hFE of 8 provides adequate current amplification, making it suitable for switching applications while minimizing signal loss.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can function effectively in high-temperature environments, increasing reliability and lifespan.

Maximum Collector-Emitter Voltage: 200 V

A high maximum collector-emitter voltage rating of 200 V allows this transistor to be used in various high-voltage applications, enhancing versatility.

Transistor Element Material: SILICON

Silicon materials provide excellent performance characteristics, making them suitable for a wide range of electronic applications.

Maximum Collector Current (IC): 5 A

The capability to handle up to 5 A of collector current makes this transistor appropriate for driving motors and other high-current loads.

Terminal Position: SINGLE

Single terminal position simplifies circuit design and layout, allowing for ease of installation and integration into existing systems.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BULD116D attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

200 V

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-251AA

JESD-30 Code:

R-PSIP-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BULD116D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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