Loading...

BULD1101ET4

STMicroelectronics

BULD1101ET4 by STMicroelectronics

BULD1101ET4 from STMicroelectronics is a single NPN power BJT designed for switching applications. It features a max power dissipation of 35W, operates up to 150 °C, and supports collector-emitter voltages of 450V. Ideal for compact electronic designs with surface mount capabilities.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,065 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,065

-

-

-

-

Anansix

USA . 1,686 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,686

-

-

-

-

Vyrian

USA . 652 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

652

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 988 parts In-Stock

1+ parts

$1.035

100+ parts

-

1k+ parts

$0.932

10k+ parts

-

988

$1.035

-

$0.932

-

MKK Technologies

India . 1,070 parts In-Stock

1+ parts

$1.946

100+ parts

-

1k+ parts

-

10k+ parts

-

1,070

$1.946

-

-

-

DigiPath Technology Company

USA . 1,070 parts In-Stock

1+ parts

$1.946

100+ parts

-

1k+ parts

-

10k+ parts

-

1,070

$1.946

-

-

-

Kepictronics

USA . 27,860 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

27,860

-

-

-

-

A-Z Elektronik GmbH

Germany . 6,027 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,027

-

-

-

-

Alle Elektronik GmbH

Germany . 4,018 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,018

-

-

-

-

Parana Technologies

USA . 1,553 parts In-Stock

1+ parts

-

100+ parts

$1.238

1k+ parts

-

10k+ parts

-

1,553

-

$1.238

-

-

Northwest PG Solutions

USA . 1,364 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,364

-

-

-

-

Corphita

USA . 801 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

801

-

-

-

-

Native Components

USA . 646 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

646

-

-

-

-

Overview

Elevate your designs with the BULD1101ET4 from STMicroelectronics, a trusted leader in high-quality semiconductor solutions. This NPN power transistor excels in switching applications, delivering exceptional reliability and performance even in demanding environments. With its compact surface-mount package and robust specifications, the BULD1101ET4 empowers engineers to enhance efficiency while ensuring durability. Choose STMicroelectronics for innovation that drives your projects forward!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable and lightweight material ensures effective protection and reliability under varying environmental conditions.

Polarity or Channel Type: NPN

NPN configuration is ideal for fast switching applications and provides good performance for a wide range of electronic devices.

Configuration: SINGLE

Single configuration simplifies circuit design and makes integration easier in compact spaces.

Transistor Application: SWITCHING

Designed specifically for switching applications, this BJT ensures efficient operation and quick response times.

Surface Mount: YES

Surface mount capability allows for smaller PCB designs and automatic assembly processes, reducing overall production costs.

Package Shape: RECTANGULAR

The rectangular package shape provides efficient use of space on the PCB and accommodates better thermal management.

Terminal Form: GULL WING

Gull wing terminals provide excellent solder joint reliability and ease of inspection, making assembly and maintenance easier.

No. of Terminals: 2

With only two terminals, the simplicity of design allows for easier integration and reduced complexity in circuit layouts.

Maximum Power Dissipation (Abs): 35 W

A high power dissipation rating indicates the ability to handle substantial loads, making it suitable for demanding applications.

Package Style (Meter): SMALL OUTLINE

The small outline design minimizes footprint while maximizing performance, ideal for space-constrained electronic devices.

Minimum DC Current Gain (hFE): 6

A minimum hFE of 6 indicates good amplification capabilities, making this transistor effective in a variety of signal processing applications.

Maximum Operating Temperature: 150 °C

The ability to operate at high temperatures enhances reliability in harsh conditions, ensuring performance stability.

Maximum Collector-Emitter Voltage: 450 V

With a high voltage rating, this transistor can be used in applications requiring significant voltage handling, improving versatility.

Transistor Element Material: SILICON

Silicon is a widely used semiconductor material, offering well-known electrical characteristics and performance.

Maximum Collector Current (IC): 3 A

A maximum collector current of 3 A allows for greater control over load requirements in power applications.

Terminal Finish: MATTE TIN

Matte tin finishing provides improved solderability and enhanced corrosion resistance for long-service life.

Terminal Position: SINGLE

Single terminal positioning facilitates easier circuit design and a more streamlined layout in compact devices.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BULD1101ET4 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

450 V

Configuration:

Minimum DC Current Gain (hFE):

6

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BULD1101ET4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19