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BULD741-1

STMicroelectronics

BULD741-1 by STMicroelectronics

BULD741-1 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 30W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for efficient circuit designs in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,054 parts In-Stock

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2,054

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Digiode

USA . 1,600 parts In-Stock

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1,600

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Anansix

USA . 331 parts In-Stock

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331

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 332 parts In-Stock

1+ parts

$0.673

100+ parts

-

1k+ parts

$0.605

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332

$0.673

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$0.605

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MKK Technologies

India . 29 parts In-Stock

1+ parts

$1.265

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29

$1.265

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DigiPath Technology Company

USA . 29 parts In-Stock

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$1.265

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29

$1.265

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AZTECH Wire

Italy . 809 parts In-Stock

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$21.250

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809

$21.250

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Ampacity Inc.

Singapore . 1,582 parts In-Stock

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$38.050

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1,582

$38.050

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Alle Elektronik GmbH

Germany . 4,073 parts In-Stock

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4,073

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Parana Technologies

USA . 1,604 parts In-Stock

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$0.804

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1,604

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$0.804

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Northwest PG Solutions

USA . 901 parts In-Stock

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901

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Native Components

USA . 863 parts In-Stock

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863

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Corphita

USA . 161 parts In-Stock

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161

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Overview

Elevate your projects with the BULD741-1 from STMicroelectronics, a trusted leader in semiconductor innovation. This robust NPN power transistor is engineered for reliable switching applications, ensuring exceptional durability and performance across various industries. With its impressive power dissipation and high-temperature tolerance, you can confidently integrate it into your designs, optimizing efficiency while benefiting from ST’s commitment to quality and reliability. Experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides durability, thermal stability, and resistance to environmental factors, making the transistor suitable for various applications.

Polarity or Channel Type: NPN

The NPN configuration is ideal for low-side switching applications, offering high electron mobility and efficiency.

Configuration: SINGLE

A single configuration simplifies circuit design and implementation, making it user-friendly for designers.

Transistor Application: SWITCHING

Designed for switching applications, this transistor enables fast operation, making it suitable for digital circuits and power control.

Package Shape: RECTANGULAR

The rectangular shape allows for more efficient use of PCB space and may enhance thermal management when mounted.

Terminal Form: THROUGH-HOLE

Through-hole mounting provides robust mechanical support and better connectivity, ensuring reliability in high-stress applications.

No. of Terminals: 3

Having three terminals facilitates straightforward connections for emitter, base, and collector, simplifying integration in circuits.

Maximum Power Dissipation (Abs): 30 W

With a maximum power dissipation of 30 W, this transistor can handle significant power loads, making it suitable for high-performance applications.

Package Style (Meter): IN-LINE

The in-line style is easy to align during assembly and can be used in a variety of standard circuit configurations.

Minimum DC Current Gain (hFE): 25

A minimum DC current gain of 25 ensures that even low input currents can effectively control larger collector currents, enhancing efficiency.

Maximum Operating Temperature: 150 °C

Operating at high temperatures (up to 150 °C) increases the versatility of this transistor, allowing it to be used in harsher environments.

Maximum Collector-Emitter Voltage: 400 V

The ability to withstand up to 400 V between collector-emitter makes this transistor suitable for high-voltage applications.

Transistor Element Material: SILICON

Silicon as the transistor element material provides excellent electrical properties and reliability, making it the standard choice for BJTs.

Maximum Collector Current (IC): 2.5 A

Supporting a maximum collector current of 2.5 A allows the transistor to be used in a wide range of applications, from small signal circuits to power control.

Terminal Finish: MATTE TIN

Matte tin terminal finish enhances solderability and corrosion resistance, ensuring long-term performance and reliability.

Terminal Position: SINGLE

A single terminal position simplifies PCB design and aids in consistent mounting, contributing to manufacturability.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BULD741-1 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-251

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BULD741-1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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