Loading...

BULD128D-1-B

STMicroelectronics

BULD128D-1-B by STMicroelectronics

BULD128D-1-B by STMicroelectronics is a NPN Power BJT with VCEsat of 1.5V, IC of 4A, and hFE of 8. Ideal for switching applications, it has a max operating temp of 150 °C and can handle up to 35W power dissipation in a small outline package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,654 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,654

-

-

-

-

Digiode

USA . 2,516 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,516

-

-

-

-

Anansix

USA . 1,387 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,387

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,804 parts In-Stock

1+ parts

$0.406

100+ parts

-

1k+ parts

$0.365

10k+ parts

-

1,804

$0.406

-

$0.365

-

Native Components

USA . 451 parts In-Stock

1+ parts

$0.557

100+ parts

-

1k+ parts

-

10k+ parts

-

451

$0.557

-

-

-

Northwest PG Solutions

USA . 1,459 parts In-Stock

1+ parts

$0.613

100+ parts

-

1k+ parts

-

10k+ parts

-

1,459

$0.613

-

-

-

MKK Technologies

India . 839 parts In-Stock

1+ parts

$0.763

100+ parts

-

1k+ parts

-

10k+ parts

-

839

$0.763

-

-

-

DigiPath Technology Company

USA . 839 parts In-Stock

1+ parts

$0.763

100+ parts

-

1k+ parts

-

10k+ parts

-

839

$0.763

-

-

-

Corphita

USA . 4,420 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,420

-

-

-

-

Parana Technologies

USA . 87 parts In-Stock

1+ parts

-

100+ parts

$0.485

1k+ parts

-

10k+ parts

-

87

-

$0.485

-

-

Overview

Enhance your electronic projects with the BULD128D-1-B Power Bipolar Junction Transistor by STMicroelectronics. This NPN transistor, featuring a built-in diode, is perfect for switching applications. With a maximum VCEsat of 1.5V and a maximum collector current of 4A, this transistor offers high performance and reliability. Its small outline package makes it ideal for space-constrained designs, while its high-quality construction ensures long-lasting durability. Trust STMicroelectronics to deliver innovative solutions for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and lightweight housing for the transistor, ensuring long-term reliability.

Polarity or Channel Type: NPN

NPN transistors are common and versatile, making this product compatible with a wide range of applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and can protect against reverse current flow.

Transistor Application: SWITCHING

Designed for switching applications, making it suitable for controlling electrical circuits.

Surface Mount: YES

Allows for easy installation on circuit boards, saving space and simplifying the manufacturing process.

Maximum VCEsat: 1.5 V

Low saturation voltage helps minimize power loss and improve efficiency in switching operations.

Package Shape: RECTANGULAR

Rectangular shape is commonly used and facilitates efficient placement on circuit boards.

Terminal Form: GULL WING

Gull wing terminals make soldering and connection easier during assembly.

No. of Terminals: 2

Simplified two-terminal design reduces complexity in circuit connections.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space, ideal for compact circuit designs.

Maximum Power Dissipation Ambient: 35 W

High power dissipation capability enables the transistor to handle demanding applications.

Minimum DC Current Gain (hFE): 8

A high DC current gain ensures proper amplification and control of current flow in a circuit.

Maximum Operating Temperature: 150 °C

Can operate effectively in high-temperature environments, offering versatility in various applications.

Maximum Collector-Emitter Voltage: 400 V

High collector-emitter voltage rating allows the transistor to withstand high voltage levels in circuits.

Transistor Element Material: SILICON

Silicon is a commonly used semiconductor material known for its reliability and performance in electronic components.

Maximum Collector Current (IC): 4 A

High collector current rating enables the transistor to handle heavy loads in electrical circuits.

Terminal Position: SINGLE

Single terminal positioning simplifies circuit connection and eliminates potential confusion.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BULD128D-1-B attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

35 W

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

1.5 V

Trade Compliance

BULD128D-1-B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19