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BULD741T4

STMicroelectronics

BULD741T4 by STMicroelectronics

BULD741T4 by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max power dissipation of 30W, operates up to 150 °C, and supports a collector-emitter voltage of 400V. Ideal for compact electronic designs with surface mount capabilities.

Median Price

$1.072

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 6,497 parts In-Stock

1+ parts

$1.540

100+ parts

$0.651

1k+ parts

$0.466

10k+ parts

$0.372

6,497

$1.540

$0.651

$0.466

$0.372

Mouser Electronics

USA . 1,759 parts In-Stock

1+ parts

$1.540

100+ parts

$0.651

1k+ parts

$0.466

10k+ parts

$0.367

1,759

$1.540

$0.651

$0.466

$0.367

Newark

USA . 509 parts In-Stock

1+ parts

$1.590

100+ parts

$0.670

1k+ parts

$0.479

10k+ parts

-

509

$1.590

$0.670

$0.479

-

Arrow

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.373

5,000

-

-

-

$0.373

Verical

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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$0.373

5,000

-

-

-

$0.373

Farnell

UK . 67 parts In-Stock

1+ parts

-

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-

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-

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67

-

-

-

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Element14

Singapore . 67 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.604

10k+ parts

$0.571

67

-

-

$0.604

$0.571

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,536 parts In-Stock

1+ parts

$0.153

100+ parts

-

1k+ parts

-

10k+ parts

-

4,536

$0.153

-

-

-

Vyrian

USA . 1,046 parts In-Stock

1+ parts

$0.161

100+ parts

-

1k+ parts

-

10k+ parts

-

1,046

$0.161

-

-

-

K-1 Technologies

USA . 256,541 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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256,541

-

-

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Anansix

USA . 2,576 parts In-Stock

1+ parts

-

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2,576

-

-

-

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EMSNET

USA . 13 parts In-Stock

1+ parts

-

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13

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NexGen Digital

USA . 1 parts In-Stock

1+ parts

-

100+ parts

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1

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 4,004 parts In-Stock

1+ parts

$0.145

100+ parts

-

1k+ parts

-

10k+ parts

-

4,004

$0.145

-

-

-

Continental Prestige Electronics

USA . 1,727 parts In-Stock

1+ parts

$0.381

100+ parts

$0.376

1k+ parts

$0.371

10k+ parts

-

1,727

$0.381

$0.376

$0.371

-

IDEA Electronic Components Group

UK . 849 parts In-Stock

1+ parts

$0.843

100+ parts

-

1k+ parts

$0.758

10k+ parts

-

849

$0.843

-

$0.758

-

MKK Technologies

India . 1,219 parts In-Stock

1+ parts

$1.585

100+ parts

-

1k+ parts

-

10k+ parts

-

1,219

$1.585

-

-

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DigiPath Technology Company

USA . 1,219 parts In-Stock

1+ parts

$1.585

100+ parts

-

1k+ parts

-

10k+ parts

-

1,219

$1.585

-

-

-

Benley Electronics

USA . 4 parts In-Stock

1+ parts

$1.750

100+ parts

-

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-

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4

$1.750

-

-

-

Perfect Parts

USA . 8,318 parts In-Stock

1+ parts

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8,318

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A-Z Elektronik GmbH

Germany . 6,461 parts In-Stock

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6,461

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

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5,000

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Eastek

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.560

10k+ parts

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5,000

-

-

$0.560

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GreenTree Electronics

Israel . 5,000 parts In-Stock

1+ parts

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5,000

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Alle Elektronik GmbH

Germany . 4,307 parts In-Stock

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4,307

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Northwest PG Solutions

USA . 497 parts In-Stock

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497

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Native Components

USA . 496 parts In-Stock

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496

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Parana Technologies

USA . 232 parts In-Stock

1+ parts

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100+ parts

$1.008

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232

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$1.008

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Kepictronics

USA . 124 parts In-Stock

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124

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Overview

Unlock the power of efficiency with the BULD741T4 from STMicroelectronics—a leader in innovation. This NPN bipolar junction transistor is designed for versatility and reliability in various applications, including switching. Crafted with premium materials and a compact surface-mount design, it ensures seamless integration into your projects while delivering exceptional performance at high temperatures. Trust in STMicroelectronics for quality that drives your success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body provides durability and resistance to environmental factors, making the transistor suitable for various applications.

Polarity or Channel Type: NPN

NPN configuration allows for effective amplification and switching functions in common electronic circuits.

Configuration: SINGLE

Having a single configuration simplifies integration into circuit designs and reduces space requirements on PCBs.

Transistor Application: SWITCHING

Optimized for switching applications, this transistor is ideal for controlling loads and signal modulation in electronic systems.

Surface Mount: YES

Surface mount technology facilitates automated assembly processes and saves board space compared to through-hole components.

Package Shape: RECTANGULAR

Rectangular package shape enhances layout flexibility when designing circuits and allows for efficient space utilization.

Terminal Form: GULL WING

Gull wing terminals provide a reliable connection and easier soldering, ensuring stable performance in circuit applications.

No. of Terminals: 2

The two-terminal design simplifies connectivity and makes it easier to integrate into compact electronic assemblies.

Maximum Power Dissipation (Abs): 30 W

A high power dissipation capability makes this transistor suitable for high-power applications, enhancing reliability.

Package Style (Meter): SMALL OUTLINE

The small outline package style optimizes board space and allows for more compact electronic designs.

Minimum DC Current Gain (hFE): 25

A minimum DC current gain indicates decent amplification capability, making it effective for various signal processing applications.

Maximum Operating Temperature: 150 °C

A high operating temperature range ensures reliable performance in demanding environments, increasing design flexibility.

Maximum Collector-Emitter Voltage: 400 V

A high maximum collector-emitter voltage enhances its usability in high-voltage applications, ensuring safety and performance.

Transistor Element Material: SILICON

Silicon material offers excellent electronic properties, leading to efficient performance in various applications.

Maximum Collector Current (IC): 2.5 A

Capable of handling significant collector current enhances its suitability for power applications and reliable operation.

Terminal Finish: MATTE TIN

Matte tin finish improves solderability and corrosion resistance, ensuring long-term reliability in electronic assemblies.

Terminal Position: SINGLE

Single terminal position simplifies circuit design and enhances ease of layout in PCB designs.

Maximum Time At Peak Reflow Temperature (s): 30

The relatively brief maximum peak reflow time supports efficient soldering processes, reducing production time.

Peak Reflow Temperature °C: 260

A peak reflow temperature of 260 °C ensures compatibility with modern surface mount soldering processes, enhancing manufacturing efficiency.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BULD741T4 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BULD741T4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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