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BUB941ZT

STMicroelectronics

BUB941ZT by STMicroelectronics

STMicroelectronics BUB941ZT is a NPN Darlington transistor with built-in diode and resistor, ideal for amplifier applications. It features a max VCEsat of 1.8V, 150W power dissipation, and can handle up to 15A collector current. The package style is small outline with gull wing terminals for surface mount assembly.

Median Price

-

Lifecycle Status

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3

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 12,311 parts In-Stock

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Anansix

USA . 2,489 parts In-Stock

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2,489

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Digiode

USA . 1,487 parts In-Stock

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1,487

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Distributors (Availability)

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Corohmni

South Africa . 60 parts In-Stock

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$0.905

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-

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60

$0.905

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IDEA Electronic Components Group

UK . 472 parts In-Stock

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$1.201

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-

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$1.081

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472

$1.201

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$1.081

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Advanced Electronics

New Zealand . 21 parts In-Stock

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$2.092

100+ parts

$1.904

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$1.715

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21

$2.092

$1.904

$1.715

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MKK Technologies

India . 704 parts In-Stock

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$2.258

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704

$2.258

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DigiPath Technology Company

USA . 704 parts In-Stock

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$2.258

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704

$2.258

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AZTECH Wire

Italy . 987 parts In-Stock

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$19.990

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987

$19.990

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Kepictronics

USA . 13,000 parts In-Stock

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Corphita

USA . 3,800 parts In-Stock

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3,800

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Alle Elektronik GmbH

Germany . 3,648 parts In-Stock

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Northwest PG Solutions

USA . 1,770 parts In-Stock

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1,770

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Parana Technologies

USA . 1,037 parts In-Stock

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$1.436

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$1.436

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Native Components

USA . 439 parts In-Stock

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439

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Overview

Unlock the power of innovation with the BUB941ZT by STMicroelectronics, a high-quality Power Bipolar Junction Transistor designed for amplifier applications. Manufactured by industry leader STMicroelectronics, this NPN transistor boasts a Darlington configuration with built-in diode and resistor, ensuring reliable performance and efficiency. With a maximum collector-emitter voltage of 350V and maximum power dissipation of 150W, the BUB941ZT delivers superior power handling capabilities. Its compact small outline package and gull wing terminals make it ideal for surface mount applications. Experience enhanced amplification and performance with the BUB941ZT from STMicroelectronics!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring durability and reliability in various operating conditions.

Polarity or Channel Type: NPN

Commonly used configuration for transistors, offering versatile application possibilities in amplifier circuits.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Integrated diode and resistor components enhance the functionality of the transistor, making it suitable for specific amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier circuits, ensuring optimal performance and output quality in audio or signal amplification.

Surface Mount: YES

Allows for easy and efficient mounting on printed circuit boards, saving space and facilitating mass production.

Maximum VCEsat: 1.8 V

Low saturation voltage helps reduce power loss and improve efficiency in amplifier applications.

No. of Terminals: 2

Simplified terminal configuration makes it easier to connect the transistor in circuits, reducing complexity and potential errors.

Maximum Power Dissipation (Abs): 150 W

High power dissipation capability allows the transistor to handle high current loads and operate reliably under demanding conditions.

Maximum Collector-Emitter Voltage: 350 V

Wide voltage tolerance provides flexibility in circuit design and allows for safe operation in high voltage applications.

Maximum Collector Current (IC): 15 A

High collector current rating enables the transistor to handle large current flows with ease, making it suitable for power amplifier designs.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUB941ZT attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

350 V

Minimum DC Current Gain (hFE):

300

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

150 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Maximum VCEsat:

1.8 V

Trade Compliance

BUB941ZT Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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