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BUB941T

STMicroelectronics

BUB941T by STMicroelectronics

STMicroelectronics BUB941T is a NPN Darlington transistor with built-in diode and resistor, ideal for switching applications. It has a max VCEsat of 1.8V, hFE of 300, and can handle up to 15A collector current. With a max power dissipation of 150W and operating temperature of 175 °C, it is suitable for high-power electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,402 parts In-Stock

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3,402

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Vyrian

USA . 1,823 parts In-Stock

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1,823

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Anansix

USA . 881 parts In-Stock

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881

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Distributors (Availability)

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Native Components

USA . 238 parts In-Stock

1+ parts

$0.092

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$0.088

238

$0.092

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$0.088

Northwest PG Solutions

USA . 2,340 parts In-Stock

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$0.101

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$0.089

2,340

$0.101

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$0.089

IDEA Electronic Components Group

UK . 99 parts In-Stock

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$1.322

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$1.190

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99

$1.322

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$1.190

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MKK Technologies

India . 1,422 parts In-Stock

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$2.486

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1,422

$2.486

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DigiPath Technology Company

USA . 1,422 parts In-Stock

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$2.486

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1,422

$2.486

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Corphita

USA . 2,364 parts In-Stock

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2,364

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Parana Technologies

USA . 1,339 parts In-Stock

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$1.581

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1,339

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$1.581

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Overview

Upgrade your power switching applications with the BUB941T by STMicroelectronics. Crafted with precision and expertise, this NPN Darlington transistor offers a seamless performance with its built-in diode and resistor configuration. Ideal for a variety of electronic projects, this transistor boasts a maximum VCEsat of 1.8V and a minimum DC current gain of 300. With a maximum collector-emitter voltage of 400V and a maximum collector current of 15A, this small outline transistor is a game-changer in the world of power bipolar junction transistors. Trust STMicroelectronics to deliver quality and reliability in every component, ensuring that your projects run smoothly and efficiently.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

Commonly used type of bipolar junction transistor, allowing for easy integration into circuits.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Simplifies circuit design by including additional components, making it more convenient for users.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring efficient performance in such scenarios.

Maximum VCEsat: 1.8 V

Low VCEsat value results in minimal power loss during operation, enhancing overall efficiency.

Surface Mount: YES

Surface mount capability allows for easy mounting on circuit boards, saving space and simplifying assembly.

Maximum Power Dissipation (Abs): 150 W

High power dissipation rating enables the transistor to handle high current and voltage levels.

Package Shape: RECTANGULAR

Rectangular shape provides a compact form factor, ideal for space-constrained applications.

Terminal Form: GULL WING

Gull wing terminals offer secure soldering connections, ensuring reliable performance in various conditions.

No. of Terminals: 2

Simple two-terminal setup enhances ease of use and integration into circuits.

Maximum Power Dissipation Ambient: 150 W

High maximum ambient power dissipation capability allows for operation in various environmental conditions.

Minimum DC Current Gain (hFE): 300

High DC current gain ensures stable and reliable amplification of signals in the circuit.

Maximum Operating Temperature: 175 °C

Wide temperature range tolerance enables reliable performance in different temperature environments.

Maximum Collector-Emitter Voltage: 400 V

High maximum voltage rating allows for handling of high voltage levels in the circuit.

Transistor Element Material: SILICON

Silicon material provides good electrical properties, ensuring efficient transistor operation.

Maximum Collector Current (IC): 15 A

High collector current rating enables the transistor to handle high current loads without damage.

Terminal Finish: MATTE TIN

Matte tin finish provides corrosion resistance and good solderability for reliable connections.

Terminal Position: SINGLE

Single terminal position simplifies circuit connections, reducing chances of errors during installation.

Case Connection: COLLECTOR

Case connection at the collector terminal simplifies circuit design and enhances overall performance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUB941T attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

300

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

150 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

1.8 V

Trade Compliance

BUB941T Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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