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BUB941TT4

STMicroelectronics

BUB941TT4 by STMicroelectronics

STMicroelectronics BUB941TT4 is a NPN Power BJT with Darlington configuration, ideal for switching applications. Features include VCEsat of 1.8V, hFE of 300, and IC of 15A. With a max operating temperature of 175 °C, it's suitable for high-power applications requiring efficient switching capabilities.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

< 1k

Distributors (In-Stock)

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Digiode

USA . 410 parts In-Stock

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410

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Anansix

USA . 349 parts In-Stock

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349

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Vyrian

USA . 165 parts In-Stock

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165

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Distributors (Availability)

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Native Components

USA . 259 parts In-Stock

1+ parts

$0.099

100+ parts

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$0.095

259

$0.099

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$0.095

Northwest PG Solutions

USA . 907 parts In-Stock

1+ parts

$0.109

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$0.096

907

$0.109

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$0.096

IDEA Electronic Components Group

UK . 63 parts In-Stock

1+ parts

$0.885

100+ parts

-

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$0.797

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63

$0.885

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$0.797

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MKK Technologies

India . 1,582 parts In-Stock

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$1.664

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1,582

$1.664

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DigiPath Technology Company

USA . 1,582 parts In-Stock

1+ parts

$1.664

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1,582

$1.664

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Corphita

USA . 3,012 parts In-Stock

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3,012

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Parana Technologies

USA . 1,676 parts In-Stock

1+ parts

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$1.058

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1,676

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$1.058

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Overview

Upgrade your power systems with the BUB941TT4 by STMicroelectronics, a top-tier manufacturer known for its quality and reliability. This Power Bipolar Junction Transistor combines a Darlington configuration with a built-in diode and resistor, perfect for switching applications. With a high DC current gain and low VCEsat, this transistor offers superior performance and efficiency. Say goodbye to overheating and instability, as this product boasts a maximum power dissipation of 150W and an operating temperature of 175 °C. Trust in STMicroelectronics to provide cutting-edge technology that delivers unmatched value and benefits to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the transistor lightweight and durable, ideal for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering versatility.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration provides high current gain and the built-in diode and resistor offer added protection and convenience.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

The surface mount capability allows for easy and efficient installation on circuit boards.

Maximum VCEsat: 1.8 V

The low saturation voltage helps minimize power loss in switching applications.

Package Shape: RECTANGULAR

The rectangular shape provides a compact design for easier integration into circuits.

Terminal Form: GULL WING

The gull wing terminals offer secure and reliable connections during installation.

No. of Terminals: 2

The transistor has a simple two-terminal setup for easy connectivity in circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on circuit boards, making it suitable for compact designs.

Maximum Power Dissipation Ambient: 150 W

The high power dissipation rating allows the transistor to handle large amounts of power, improving its reliability.

Minimum DC Current Gain (hFE): 300

With a high minimum DC current gain, the transistor provides consistent and reliable amplification.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature range ensures reliable performance even in demanding environments.

Maximum Collector-Emitter Voltage: 400 V

The high collector-emitter voltage rating allows the transistor to handle high voltages, expanding its range of applications.

Transistor Element Material: SILICON

Silicon is a commonly used material for transistors due to its reliability and performance characteristics.

Maximum Collector Current (IC): 15 A

The high collector current rating makes the transistor suitable for high-power applications.

Terminal Position: SINGLE

The single terminal position simplifies circuit design and installation.

Case Connection: COLLECTOR

The collector connection design enhances the transistor's performance in switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUB941TT4 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

300

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

150 W

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

1.8 V

Trade Compliance

BUB941TT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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