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BUB941ZTT4

STMicroelectronics

BUB941ZTT4 by STMicroelectronics

BUB941ZTT4 by STMicroelectronics is a NPN Darlington transistor with built-in diode and resistor, ideal for amplifier applications. It features a max VCEsat of 1.8V, a min DC current gain of 300 (hFE), and can handle up to 15A of collector current. With a max power dissipation of 150W and an operating temperature range up to 175°C, this transistor offers high performance in a small outline package suitable for surface mount applications.

Median Price

$2.100

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 700 parts In-Stock

1+ parts

$2.100

100+ parts

$0.938

1k+ parts

$0.800

10k+ parts

-

700

$2.100

$0.938

$0.800

-

Mouser Electronics

USA . 888 parts In-Stock

1+ parts

$2.850

100+ parts

$1.420

1k+ parts

$1.060

10k+ parts

$0.978

888

$2.850

$1.420

$1.060

$0.978

DigiKey

USA . 62 parts In-Stock

1+ parts

$2.940

100+ parts

-

1k+ parts

-

10k+ parts

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62

$2.940

-

-

-

Element14

Singapore . 700 parts In-Stock

1+ parts

$4.060

100+ parts

$1.880

1k+ parts

$1.510

10k+ parts

-

700

$4.060

$1.880

$1.510

-

Arrow

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.651

10k+ parts

$0.645

9,000

-

-

$0.651

$0.645

Verical

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.003

10k+ parts

-

4,000

-

-

$1.003

-

RS (Exports)

UK . 830 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.144

10k+ parts

$2.061

830

-

-

$1.144

$2.061

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 64 parts In-Stock

1+ parts

$2.304

100+ parts

-

1k+ parts

-

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64

$2.304

-

-

-

Digiode

USA . 324 parts In-Stock

1+ parts

$2.318

100+ parts

-

1k+ parts

-

10k+ parts

-

324

$2.318

-

-

-

TME

Poland . 847 parts In-Stock

1+ parts

$2.860

100+ parts

$1.370

1k+ parts

$1.350

10k+ parts

-

847

$2.860

$1.370

$1.350

-

Flip Electronics

USA . 200,000 parts In-Stock

1+ parts

-

100+ parts

-

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-

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200,000

-

-

-

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Vyrian

USA . 2,930 parts In-Stock

1+ parts

-

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2,930

-

-

-

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IBS Electronics

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.235

10k+ parts

-

2,000

-

-

$1.235

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Anansix

USA . 1,749 parts In-Stock

1+ parts

-

100+ parts

-

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1,749

-

-

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VNN

France . 1,472 parts In-Stock

1+ parts

-

100+ parts

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1,472

-

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Diverse Electronics

Canada . 10 parts In-Stock

1+ parts

-

100+ parts

-

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10

-

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Sunrise Surplus Inc.

USA . 2 parts In-Stock

1+ parts

-

100+ parts

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2

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 2,441 parts In-Stock

1+ parts

$0.550

100+ parts

$0.536

1k+ parts

$0.534

10k+ parts

-

2,441

$0.550

$0.536

$0.534

-

Corohmni

South Africa . 211 parts In-Stock

1+ parts

$0.570

100+ parts

-

1k+ parts

-

10k+ parts

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211

$0.570

-

-

-

Aztec Data Supply Inc.

USA . 1,612 parts In-Stock

1+ parts

$0.700

100+ parts

-

1k+ parts

-

10k+ parts

-

1,612

$0.700

-

-

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Ampacity Inc.

Singapore . 2,973 parts In-Stock

1+ parts

$0.750

100+ parts

-

1k+ parts

-

10k+ parts

-

2,973

$0.750

-

-

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Advanced Electronics

New Zealand . 40 parts In-Stock

1+ parts

$1.418

100+ parts

$1.347

1k+ parts

$1.347

10k+ parts

-

40

$1.418

$1.347

$1.347

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IDEA Electronic Components Group

UK . 1,780 parts In-Stock

1+ parts

$1.607

100+ parts

-

1k+ parts

$1.447

10k+ parts

-

1,780

$1.607

-

$1.447

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Corphita

USA . 3,811 parts In-Stock

1+ parts

$2.196

100+ parts

-

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3,811

$2.196

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Continental Prestige Electronics

USA . 1,181 parts In-Stock

1+ parts

$2.304

100+ parts

-

1k+ parts

-

10k+ parts

$2.258

1,181

$2.304

-

-

$2.258

Argo Parts USA

USA . 469 parts In-Stock

1+ parts

$2.304

100+ parts

-

1k+ parts

-

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469

$2.304

-

-

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Netroflash

USA . 50 parts In-Stock

1+ parts

$2.304

100+ parts

$2.258

1k+ parts

-

10k+ parts

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50

$2.304

$2.258

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MKK Technologies

India . 1,421 parts In-Stock

1+ parts

$3.022

100+ parts

-

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1,421

$3.022

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DigiPath Technology Company

USA . 1,421 parts In-Stock

1+ parts

$3.022

100+ parts

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1,421

$3.022

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Microchip USA

USA . 4,869 parts In-Stock

1+ parts

$14.617

100+ parts

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4,869

$14.617

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Infinite Electronics LLP (Excess)

. 654,019 parts In-Stock

1+ parts

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654,019

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iodParts Technologies Inc.

India . 217,005 parts In-Stock

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217,005

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Component Stockers USA

USA . 23,099 parts In-Stock

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23,099

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Perfect Parts

USA . 10,819 parts In-Stock

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10,819

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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10,000

-

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Lixinc

USA . 4,877 parts In-Stock

1+ parts

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4,877

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-

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Parana Technologies

USA . 1,914 parts In-Stock

1+ parts

-

100+ parts

$1.922

1k+ parts

-

10k+ parts

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1,914

-

$1.922

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Overview

Experience high-quality performance with the BUB941ZTT4 from STMicroelectronics, a leading manufacturer in the industry. This Power Bipolar Junction Transistor (BJT) features a DARLINGTON configuration with a built-in diode and resistor, making it perfect for amplifier applications. With a maximum VCEsat of 1.8V and a minimum DC current gain (hFE) of 300, this transistor offers exceptional value and benefits to customers looking for reliable and efficient power solutions. Upgrade your electronics with the BUB941ZTT4 and experience superior performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, making it easier to handle and more resistant to damage.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for amplifier applications.

Maximum VCEsat: 1.8 V

Low VCEsat value indicates minimal voltage drop across the collector-emitter junction, resulting in efficient power transfer and reduced heat dissipation.

Maximum Power Dissipation (Abs): 150 W

High power dissipation capability allows the transistor to handle large amounts of power without overheating, ensuring reliable performance.

Minimum DC Current Gain (hFE): 300

A high DC current gain ensures that small base currents can control large collector currents, making the transistor highly efficient in amplification tasks.

Maximum Collector-Emitter Voltage: 350 V

With a high voltage rating, this transistor can withstand large voltage differences across the collector-emitter junction, making it suitable for high-power applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUB941ZTT4 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

350 V

Minimum DC Current Gain (hFE):

300

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

150 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Maximum VCEsat:

1.8 V

Trade Compliance

BUB941ZTT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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