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3STF1640

STMicroelectronics

3STF1640 by STMicroelectronics

3STF1640 by STMicroelectronics is a NPN BJT transistor with 40V VCEO, 6A IC, and 1.5W Ptot. Ideal for switching applications, it has a hFE of min. 20 and fT of 100MHz. Its small outline package makes it suitable for surface mount designs in various electronic devices.

Median Price

$0.082

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Future Electronics

Canada . 2,500 parts In-Stock

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$0.082

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$0.082

Distributors (In-Stock)

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Vyrian

USA . 4,903 parts In-Stock

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4,903

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Anansix

USA . 1,385 parts In-Stock

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1,385

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Digiode

USA . 499 parts In-Stock

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499

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Prism Electronics

USA . 4 parts In-Stock

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4

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Distributors (Availability)

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Native Components

USA . 313 parts In-Stock

1+ parts

$0.135

100+ parts

-

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$0.130

313

$0.135

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$0.130

Northwest PG Solutions

USA . 475 parts In-Stock

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$0.149

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$0.131

475

$0.149

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$0.131

IDEA Electronic Components Group

UK . 312 parts In-Stock

1+ parts

$0.315

100+ parts

-

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$0.283

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312

$0.315

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$0.283

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MKK Technologies

India . 1,515 parts In-Stock

1+ parts

$0.592

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1,515

$0.592

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DigiPath Technology Company

USA . 1,515 parts In-Stock

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$0.592

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1,515

$0.592

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AZTECH Wire

Italy . 295 parts In-Stock

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$13.970

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$13.970

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Kepictronics

USA . 25,000 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,459 parts In-Stock

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Corphita

USA . 3,028 parts In-Stock

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Parana Technologies

USA . 1,443 parts In-Stock

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$0.376

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$0.376

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Perfect Parts

USA . 4 parts In-Stock

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Overview

Experience the power of innovation with the 3STF1640 by STMicroelectronics. As a leading manufacturer in Power Bipolar Junction Transistors (BJT), STMicroelectronics delivers top-notch quality and reliability. Ideal for switching applications, this NPN transistor offers superior performance and efficiency. With a maximum collector-emitter voltage of 40V and a maximum current of 6A, the 3STF1640 is a versatile component that provides exceptional value to customers. Trust STMicroelectronics for cutting-edge technology that meets your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring durability and reliability.

Polarity or Channel Type: NPN

Commonly used type of BJT allowing for versatile applications in various circuit designs.

Configuration: SINGLE

Simplifies circuit design and makes it easier to integrate into existing systems.

Transistor Application: SWITCHING

Designed for efficient switching applications with high performance and low power dissipation.

Surface Mount: YES

Allows for easy and compact mounting on PCBs, saving space and facilitating automated assembly.

Package Shape: RECTANGULAR

Provides a standard form factor for easy integration into circuit designs.

No. of Terminals: 3

Simplifies circuit connection and enables straightforward integration into electronic systems.

Maximum Power Dissipation (Abs): 1.5 W

Capable of handling moderate power levels, suitable for a wide range of applications.

Package Style (Meter): SMALL OUTLINE

Compact package size allows for space-efficient PCB layout and integration.

Minimum DC Current Gain (hFE): 20

Ensures stable and reliable performance in amplification and switching applications.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for operation in challenging environments.

Maximum Collector-Emitter Voltage: 40 V

Allows for operation in a wide range of voltage levels, increasing versatility.

Transistor Element Material: SILICON

Provides good electrical performance and reliability for the transistor.

Maximum Collector Current (IC): 6 A

Capable of handling high currents, suitable for power applications.

Terminal Finish: Matte Tin (Sn)

Ensures good electrical contacts and solderability for reliable connections.

Terminal Position: SINGLE

Simplifies installation and connection in circuit designs.

Case Connection: COLLECTOR

Facilitates easy and efficient circuit connections and layout.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures stable and reliable soldering during assembly.

Peak Reflow Temperature °C: 260

Suitable for lead-free soldering processes, ensuring environmental compliance.

Nominal Transition Frequency (fT): 100 MHz

Capable of high-speed switching operations, suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 3STF1640 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

3STF1640 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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