Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Power Bipolar Junction Transistors (BJT) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as power supplies, motor drives, and welding equipment.The Power BJT is a three-layer device that consists of an emitter, base, and collector region. The emitter and collector are heavily doped, while the base region is lightly doped. The power BJT works by controlling the flow of majority charge carriers (electrons or holes) from the emitter to the collector region through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.Power BJTs are designed to handle high current and voltage levels, and have a low on-resistance and high gain. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.Proper selection and use of Power BJTs are critical to ensure safe and reliable operation of power electronics systems. Power BJTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.
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MJD117RLG
Onsemi
MJD117RLG by Onsemi is a PNP power bipolar junction transistor (BJT) with a max collector-emitter voltage of 100V and a max collector current of 2A. It is designed for switching applications and has a min DC current gain of 200 (hFE).
COLLECTOR
2 A
100 V
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
200
R-PSSO-G2
e3
1
2
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
PNP
20 W
Not Qualified
Other Transistors
YES
MATTE TIN
GULL WING
SINGLE
30
SWITCHING
SILICON
25 MHz
STP12IE90F4
STMicroelectronics
STP12IE90F4 from STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 21W, supports up to 12A collector current, and operates at temperatures up to 150 °C. Ideal for efficient circuit designs in various electronic devices.
ISOLATED
12 A
SINGLE WITH BUILT-IN FET AND DIODE
5
TO-220
R-PSFM-T4
4
FLANGE MOUNT
NPN
21 W
NO
THROUGH-HOLE
2STN2360
2STN2360 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max collector current of 3 A, a power dissipation of 1.6 W, and operates up to 150 °C. Its compact SO package ensures efficient surface mounting in electronic circuits.
3 A
60 V
80
R-PDSO-G4
1.6 W
DUAL
130 MHz
KSD1691YSTSTU
Fairchild Semiconductor
KSD1691YSTSTU by Fairchild Semiconductor is a NPN Power BJT with 20W power dissipation, hFE of 160, and 60V VCE. Ideal for applications requiring a single configuration transistor in through-hole package style, such as power amplifiers or voltage regulators.
5 A
160
TO-126
R-PSFM-T3
3
2STL1360
2STL1360 by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector current of 3 A, a power dissipation of 1.2 W, and operates up to 150 °C. Its cylindrical package ensures efficient thermal management in various electronic circuits.
TO-92
O-PBCY-T3
ROUND
CYLINDRICAL
NOT SPECIFIED
1.2 W
BOTTOM
BUL416T
BUL416T by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 110W, operates up to 150 °C, and supports collector-emitter voltages up to 800V. Ideal for high-performance electronic circuits.
6 A
800 V
18
TO-220AB
110 W
BUL741FP
BUL741FP by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max power dissipation of 60W, a collector-emitter voltage of 400V, and operates up to 150 °C. Ideal for high-power circuits with through-hole mounting.
2.5 A
400 V
25
60 W
MD2009DFP
MD2009DFP by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 700 V, a power dissipation of 40 W, and operates at up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.
10 A
700 V
SINGLE WITH BUILT-IN DIODE AND RESISTOR
40 W
UL RECOGNIZED
STD826T4
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): 3 A;
30 V
15 W
Matte Tin (Sn) - annealed
100 MHz
STD840DN40
STD840DN40 by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 400V, a power dissipation of 3W, and operates at up to 150 °C. Its dual-element configuration ensures reliable performance in various electronic circuits.
4 A
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
8
R-PDIP-T8
IN-LINE
3 W
2ST5949
2ST5949 by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 250W, operates up to 150 °C, and supports collector-emitter voltages of 250V. Ideal for high-performance power management in various electronic devices.
17 A
250 V
35
TO-3
O-MBFM-P2
METAL
250 W
PIN/PEG
2STA1694
2STA1694 by STMicroelectronics is a PNP power BJT designed for amplifier applications. It features a max power dissipation of 80W, operates up to 150 °C, and supports collector-emitter voltages of 120V. Its robust design ensures reliable performance in various electronic circuits.
8 A
120 V
70
80 W
AMPLIFIER
20 MHz
2STA2120
2STA2120 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 200W, operates up to 150 °C, and supports collector-emitter voltages of 250V. Ideal for high-performance electronic circuits.
200 W
2STC2510
2STC2510 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 125W, operates up to 150 °C, and supports collector-emitter voltages of 100V. Ideal for high-performance electronic circuits.
25 A
40
125 W
2STC4467
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 8 A;
Matte Tin (Sn)
2STC5948
2STC5948 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 200W, operates up to 150 °C, and supports collector-emitter voltages of 250V. Ideal for high-performance electronic circuits.
2STC5949
2STC5949 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 220W, operates up to 150 °C, and supports collector-emitter voltages of 250V. Ideal for high-performance electronic circuits.
TO-264AA
220 W
2STF2340
2STF2340 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 1.4 W, a collector current of 3 A, and operates up to 150 °C. Its compact surface mount design makes it ideal for space-constrained circuits.
40 V
R-PDSO-F4
1.4 W
FLAT
2STN2540-A
2STN2540-A by STMicroelectronics is a PNP BJT transistor with 40V VCE, 5A IC, and 1.6W power dissipation. Ideal for switching applications in small outline packages due to its high DC current gain of 50 (hFE). The Gull Wing terminal form and matte tin finish make it suitable for surface mount designs.
50
2STW4466
2STW4466 by STMicroelectronics is a powerful NPN BJT designed for amplifier applications. It features a max power dissipation of 60 W, operates up to 150 °C, and supports collector-emitter voltages of 80 V. Ideal for high-performance electronic circuits.
80 V
TO-247AD
STW13009
STW13009 by STMicroelectronics is a NPN BJT transistor with max. collector-emitter voltage of 400V, max. collector current of 12A, and max. power dissipation of 125W. Ideal for switching applications due to its single configuration and silicon element material in a rectangular package shape with through-hole terminals.
10
STWH13009
STWH13009 from STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 125W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for high-power circuits with through-hole mounting.
11
BUL742CFP
BUL742CFP by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max power dissipation of 30W, a collector-emitter voltage of 400V, and operates up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.
30 W
BUL49DFP
BUL49DFP by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max power dissipation of 34W, a collector-emitter voltage of 450V, and operates up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.
450 V
SINGLE WITH BUILT-IN DIODE
34 W
BULD741-1
BULD741-1 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 30W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for efficient circuit designs in various electronic devices.
TO-251
R-PSIP-T3
STN690A
STN690A by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 1.6W, supports up to 3A collector current, and operates at temperatures up to 150 °C. Its compact surface mount design ensures efficient performance in electronic circuits.
90
STX616
STX616 from STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 2.8W, operates up to 150 °C, and supports collector-emitter voltages up to 500V. Its cylindrical package ensures efficient thermal management in various electronic circuits.
1.5 A
500 V
2.8 W
2STF1550
2STF1550 by STMicroelectronics is an NPN BJT designed for switching applications. It features a max power dissipation of 1.4W, a collector current of up to 5A, and operates at temperatures up to 150 °C. Its compact surface mount design ensures efficient performance in electronic circuits.
50 V
2STA1695
2STA1695 by STMicroelectronics is a PNP power BJT designed for amplifier applications. It features a max power dissipation of 100W, collector-emitter voltage of 140V, and operates up to 150 °C. Its through-hole design ensures easy integration into various electronic circuits.
140 V
100 W
2STA1943
2STA1943 by STMicroelectronics is a PNP power BJT designed for amplifier applications. It features a max power dissipation of 150W, operates up to 150 °C, and supports collector-emitter voltages of 230V. Its robust design ensures reliable performance in demanding environments.
15 A
230 V
150 W
30 MHz
2STC4468
2STC4468 by STMicroelectronics is a NPN BJT transistor with 140V VCE, 10A IC, and 100W power dissipation. Ideal for amplifier applications due to its 20MHz fT, 50 hFE, and -55 to +150°C operating range. Packaged in plastic/epoxy with through-hole terminals for easy mounting.
2STC5200
2STC5200 by STMicroelectronics is a NPN BJT transistor with max. power dissipation of 150W, max. collector-emitter voltage of 230V, and max. collector current of 15A. It is used as an amplifier in applications requiring high power handling capabilities and operates at temperatures up to 150°C.
2STF1340
2STF1340 by STMicroelectronics is an NPN BJT designed for switching applications. It features a max power dissipation of 1.4W, a collector current of up to 3A, and operates at temperatures up to 150 °C. Its compact surface mount design makes it ideal for space-constrained circuits.
180
R-PSSO-F3
BU900TP
NPN; Configuration: DARLINGTON, 3 TRANSISTORS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 55 W; Maximum Collector Current (IC): 5 A; Maximum Collector-Emitter Voltage: 370 V;
370 V
DARLINGTON, 3 TRANSISTORS WITH BUILT-IN DIODE AND RESISTOR
7000
55 W
STT13005
STT13005 from STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 45W, operates up to 150 °C, and supports collector-emitter voltages up to 700V. Ideal for high-performance electronic circuits.
45 W
NJW0281G
NJW0281G by Onsemi is a NPN BJT with 150W power dissipation, 250V max collector-emitter voltage, and 30MHz fT. Ideal for amplifier applications due to its single configuration and high hFE of 75. The transistor's flange mount package with matte tin finish makes it suitable for through-hole mounting in various electronic devices.
75
NJW21193G
NJW21193G by Onsemi is a PNP BJT transistor with 250V VCEO, 16A IC, and 200W power dissipation. Ideal for amplifier applications, it has a min hFE of 8 and operates up to 150°C. The package style is flange mount with a rectangular shape and through-hole terminals.
16 A
4 MHz
DCP69-16-13
Diodes Incorporated
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;
1 A
17 pF
20 V
100
-55 Cel
2 W
200 MHz
.5 V
ULN2003APWRG4
Texas Instruments
ULN2003APWRG4 by Texas Instruments is a NPN BJT transistor with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V and max collector current of 0.5A, suitable for switching applications. This surface-mount transistor in a small outline package is ideal for complex configurations requiring high reliability.
LOGIC LEVEL COMPATIBLE
.5 A
COMPLEX
MO-153AB
R-PDSO-G16
e4
7
16
Nickel/Palladium/Gold (Ni/Pd/Au)
2ST2121
2ST2121 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 250W, operates up to 200 °C, and supports collector-emitter voltages of 250V. Ideal for high-performance electronic circuits.
200 Cel
2STA1962
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Power Dissipation (Abs): 130 W; Maximum Collector Current (IC): 15 A;
130 W
2STC5242
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Power Dissipation (Abs): 130 W; Maximum Collector Current (IC): 15 A;
2STW1693
2STW1693 by STMicroelectronics is a PNP power BJT designed for amplifier applications. It features a max power dissipation of 60 W, operates up to 150 °C, and supports collector-emitter voltages of 80 V. Its robust design ensures reliable performance in demanding environments.
TO-247
STH13009
STH13009 from STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 100W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for high-performance electronic circuits.
STL128DNFP
STL128DNFP by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 28W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for high-performance electronic circuits.
28 W
STL128DN
STL128DN by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 400 V, a power dissipation of 40 W, and operates at up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.
STN878
STN878 by STMicroelectronics is a compact NPN BJT designed for switching applications. It features a max power dissipation of 1.6 W, operates up to 150 °C, and supports collector currents up to 5 A. Ideal for efficient power management in electronic circuits.
TR136
TR136 by STMicroelectronics is an NPN BJT designed for switching applications, featuring a max power dissipation of 60W and a collector-emitter voltage of 400V. It operates at up to 150 °C with a min DC current gain (hFE) of 10. Its through-hole design ensures easy integration in various electronic circuits.
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