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STX616

STMicroelectronics

STX616 by STMicroelectronics

STX616 from STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 2.8W, operates up to 150 °C, and supports collector-emitter voltages up to 500V. Its cylindrical package ensures efficient thermal management in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,170 parts In-Stock

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7,170

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Anansix

USA . 2,342 parts In-Stock

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2,342

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Digiode

USA . 637 parts In-Stock

1+ parts

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637

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ACDS - Activité Composants Distribution Service

France . 30 parts In-Stock

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30

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 641 parts In-Stock

1+ parts

$1.579

100+ parts

-

1k+ parts

$1.421

10k+ parts

-

641

$1.579

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$1.421

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MKK Technologies

India . 88 parts In-Stock

1+ parts

$2.969

100+ parts

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88

$2.969

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DigiPath Technology Company

USA . 88 parts In-Stock

1+ parts

$2.969

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88

$2.969

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AZTECH Wire

Italy . 254 parts In-Stock

1+ parts

$18.730

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254

$18.730

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Component Stockers USA

USA . 563 parts In-Stock

1+ parts

$99.990

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563

$99.990

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Alle Elektronik GmbH

Germany . 3,235 parts In-Stock

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3,235

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Corphita

USA . 2,282 parts In-Stock

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2,282

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Parana Technologies

USA . 406 parts In-Stock

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$1.888

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406

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$1.888

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Overview

Unlock unparalleled performance with the STX616 from STMicroelectronics, a leader in semiconductor innovation. This NPN power transistor excels in switching applications, providing robust reliability and efficiency that enhances your designs. Crafted from high-quality silicon and engineered for optimal performance, it supports a wide range of applications—from industrial controls to consumer electronics—delivering exceptional value that drives your projects forward. Choose STMicroelectronics for unmatched quality and support!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures reliability and protection against environmental factors, making this BJT suitable for a variety of applications.

Polarity or Channel Type: NPN

Being an NPN transistor allows for efficient switching and amplification of signals in a wide range of electronic circuits.

Configuration: SINGLE

A single configuration simplifies circuit design and integration, providing flexibility for use in various electronic devices.

Transistor Application: SWITCHING

Designed for switching applications, this BJT can handle rapid on-off states, making it ideal for digital circuits and power management.

Package Shape: ROUND

The round package shape enhances thermal performance and allows for effective mounting in various electronic assemblies.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a robust connection to printed circuit boards, ensuring strong mechanical and electrical stability.

No. of Terminals: 3

The three-terminal design allows for simple integration into existing circuits while accommodating standard BJT configurations.

Maximum Power Dissipation (Abs): 2.8 W

A maximum power dissipation of 2.8 W indicates the ability to handle significant power levels, making it suitable for real-world applications.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers a compact footprint, making it easy to incorporate into space-constrained designs.

Minimum DC Current Gain (hFE): 4

With a minimum DC current gain of 4, this BJT ensures adequate amplification in small-signal applications, enhancing performance.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature of 150 °C ensures reliability and performance even in harsh environments, extending the lifespan of the device.

Maximum Collector-Emitter Voltage: 500 V

A high collector-emitter voltage rating of 500 V allows this transistor to be used in high-voltage applications, enhancing its versatility.

Transistor Element Material: SILICON

Silicon as the element material provides excellent electrical properties, ensuring stable performance across various operating conditions.

Maximum Collector Current (IC): 1.5 A

A maximum collector current of 1.5 A makes this BJT capable of handling substantial loads, suitable for applications requiring higher power.

Terminal Position: BOTTOM

The bottom terminal position allows for easier PCB layout and improved thermal management in circuit design.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STX616 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

500 V

Configuration:

Minimum DC Current Gain (hFE):

4

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STX616 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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