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STX616-AP

STMicroelectronics

STX616-AP by STMicroelectronics

STX616-AP by STMicroelectronics is a NPN BJT transistor with max. collector-emitter voltage of 500V and max. collector current of 1.5A, ideal for switching applications. It has a min. DC current gain of 4, package style in cylindrical shape, and can dissipate up to 2.8W power at a max temp of 150°C.

Median Price

$0.536

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 7 parts In-Stock

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$0.133

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7

$0.133

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DigiKey

USA . 1,766 parts In-Stock

1+ parts

$0.940

100+ parts

$0.381

1k+ parts

$0.265

10k+ parts

$0.199

1,766

$0.940

$0.381

$0.265

$0.199

Chip1Stop

Japan . 7 parts In-Stock

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Nova Conductors

Japan . 750 parts In-Stock

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$0.256

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750

$0.256

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Digiode

USA . 842 parts In-Stock

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$0.257

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842

$0.257

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Vyrian

USA . 2,133 parts In-Stock

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2,133

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Anansix

USA . 1,347 parts In-Stock

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Chip Stock

USA . 451 parts In-Stock

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451

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J2 Sourcing AB

Sweden . 14 parts In-Stock

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Ampacity Inc.

Singapore . 2,356 parts In-Stock

1+ parts

$0.230

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2,356

$0.230

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Corphita

USA . 1,493 parts In-Stock

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$0.244

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$0.244

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Argo Parts USA

USA . 4,308 parts In-Stock

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$0.256

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$0.248

4,308

$0.256

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$0.248

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.256

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$0.251

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1,000

$0.256

$0.251

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Continental Prestige Electronics

USA . 193 parts In-Stock

1+ parts

$0.256

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$0.251

193

$0.256

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$0.251

IDEA Electronic Components Group

UK . 2,120 parts In-Stock

1+ parts

$1.813

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$1.632

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2,120

$1.813

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MKK Technologies

India . 2,088 parts In-Stock

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$3.410

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$3.410

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DigiPath Technology Company

USA . 2,088 parts In-Stock

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$3.410

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$3.410

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Microchip USA

USA . 2,357 parts In-Stock

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$4.225

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$4.225

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Perfect Parts

USA . 103,570 parts In-Stock

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RC Electronics

USA . 15,300 parts In-Stock

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Kepictronics

USA . 15,000 parts In-Stock

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Eastek

USA . 4,000 parts In-Stock

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$0.380

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$0.380

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GreenTree Electronics

Israel . 4,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 3,000 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,788 parts In-Stock

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iodParts Technologies Inc.

India . 1,275 parts In-Stock

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Lixinc

USA . 441 parts In-Stock

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Parana Technologies

USA . 126 parts In-Stock

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$2.168

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$2.168

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Overview

The STX616-AP by STMicroelectronics is a top-of-the-line Power BJT designed for high-performance applications. With a maximum collector-emitter voltage of 500V and a maximum operating temperature of 150°C, this NPN transistor offers exceptional reliability and durability. Whether you're looking to optimize power switching in industrial equipment or enhance the efficiency of automotive systems, the STX616-AP delivers unmatched performance. Trust STMicroelectronics for quality components that exceed expectations and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this transistor lightweight and durable, ideal for a variety of applications.

Polarity or Channel Type: NPN

Being NPN type allows for easy integration with other NPN components, making circuit design simpler and more efficient.

Configuration: SINGLE

The single configuration reduces complexity in circuit design and makes it easier to troubleshoot or replace if needed.

Transistor Application: SWITCHING

Designed for switching applications, this transistor provides fast and efficient control over power flow, making it versatile for various electronic tasks.

Package Shape: ROUND

The round shape allows for easy mounting and installation, providing a compact and efficient solution for space-constrained designs.

Terminal Form: THROUGH-HOLE

The through-hole terminal form ensures secure connections on a printed circuit board, making installation and soldering hassle-free.

No. of Terminals: 3

With three terminals, this transistor offers flexibility in circuit connections and allows for a range of possible configurations.

Maximum Power Dissipation (Abs): 2.8 W

The high maximum power dissipation capacity of 2.8 W ensures reliable performance under demanding conditions.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides efficient heat dissipation and mechanical strength, ensuring longevity and stability in operation.

Minimum DC Current Gain (hFE): 4

With a minimum DC current gain of 4, this transistor offers consistent and reliable amplification for signal processing applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures stable performance even in harsh environments.

Maximum Collector-Emitter Voltage: 500 V

The high maximum collector-emitter voltage of 500 V allows for safe operation in high-voltage circuits and applications.

Transistor Element Material: SILICON

Made from silicon, this transistor offers high thermal conductivity and durability, ensuring long-lasting performance and reliability.

Maximum Collector Current (IC): 1.5 A

With a maximum collector current of 1.5 A, this transistor can handle high current loads, making it suitable for power applications.

Terminal Position: BOTTOM

The bottom terminal position facilitates easier soldering and installation, ensuring a secure connection for optimal performance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STX616-AP attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

500 V

Configuration:

Minimum DC Current Gain (hFE):

4

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STX616-AP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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