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2ST2121

STMicroelectronics

2ST2121 by STMicroelectronics

2ST2121 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 250W, operates up to 200 °C, and supports collector-emitter voltages of 250V. Ideal for high-performance electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 6,203 parts In-Stock

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Anansix

USA . 1,158 parts In-Stock

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Digiode

USA . 362 parts In-Stock

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362

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Zilex Electronics Inc.

Canada . 79 parts In-Stock

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IDEA Electronic Components Group

UK . 649 parts In-Stock

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$0.611

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$0.550

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649

$0.611

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$0.550

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MKK Technologies

India . 482 parts In-Stock

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$1.149

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482

$1.149

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DigiPath Technology Company

USA . 482 parts In-Stock

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$1.149

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482

$1.149

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AZTECH Wire

Italy . 926 parts In-Stock

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$21.870

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926

$21.870

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Native Components

USA . 39 parts In-Stock

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$68.796

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$66.044

39

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$66.044

Northwest PG Solutions

USA . 551 parts In-Stock

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$75.676

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551

$75.676

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Component Stockers USA

USA . 495 parts In-Stock

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$99.990

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495

$99.990

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Alle Elektronik GmbH

Germany . 4,294 parts In-Stock

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Corphita

USA . 4,136 parts In-Stock

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Parana Technologies

USA . 2,265 parts In-Stock

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$0.730

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$0.730

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Overview

Unlock superior performance with the 2ST2121 from STMicroelectronics, a leader in innovation and quality. This robust PNP power transistor excels in switching applications, making it ideal for a variety of demanding environments. With its impressive power handling and reliability, the 2ST2121 ensures your designs run efficiently and effectively. Trust in STMicroelectronics’ reputation for excellence and elevate your projects with this powerhouse component that champions both performance and durability.

Feature Benefit Bullets

Package Body Material: METAL

The metal body material provides excellent thermal conductivity and durability, ensuring reliable performance under high-stress conditions.

Polarity or Channel Type: PNP

The PNP configuration allows for effective switching applications in various circuits, making it versatile for different electronic designs.

Configuration: SINGLE

The single configuration makes it easy to integrate into circuits without added complexity, ideal for space-constrained designs.

Transistor Application: SWITCHING

Designed specifically for switching, this transistor excels in fast operations, making it suitable for applications like motor controls and power supplies.

Package Shape: ROUND

The round package shape facilitates easy mounting and integration into various PCB layouts, enhancing design flexibility.

Terminal Form: PIN/PEG

The PIN/PEG terminal form ensures secure and reliable connections, reducing the risk of failure during operation.

No. of Terminals: 2

Having only two terminals simplifies the circuit design and integration, making it cost-effective and easier to work with.

Maximum Power Dissipation (Abs): 250 W

With a high power dissipation limit, this transistor can handle significant power loads, making it suitable for high-performance applications.

Package Style (Meter): FLANGE MOUNT

Flange mount design provides a stable and secure installation, ensuring reliability in demanding environments.

Minimum DC Current Gain (hFE): 35

A minimum gain of 35 ensures adequate amplification, making it effective for diverse electronic circuit applications.

Maximum Operating Temperature: 200 °C

Capable of operating at high temperatures, this transistor can function reliably in harsh conditions, extending the range of applications.

Maximum Collector-Emitter Voltage: 250 V

A high collector-emitter voltage rating provides robustness, allowing it to be used in high-voltage applications without risk of breakdown.

Transistor Element Material: SILICON

Silicon material enhances performance, ensuring reliability and efficiency in various electronic applications.

Maximum Collector Current (IC): 17 A

The ability to handle up to 17 A of collector current makes this transistor suitable for driving heavy loads in industrial applications.

Terminal Position: BOTTOM

Bottom terminal positioning facilitates easier PCB layout and can improve thermal management in densely populated circuits.

Case Connection: COLLECTOR

Direct collector connection allows for efficient heat transfer and optimal performance in switching applications.

Nominal Transition Frequency (fT): 25 MHz

A transition frequency of 25 MHz indicates good frequency response, enabling applications in high-speed circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2ST2121 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

35

JEDEC-95 Code:

TO-3

JESD-30 Code:

O-MBFM-P2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2ST2121 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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