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2ST2480

STMicroelectronics

2ST2480 by STMicroelectronics

2ST2480 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 20W, collector-emitter voltage of 80V, and operates up to 150 °C. Ideal for high-performance circuits requiring reliable control.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,434 parts In-Stock

1+ parts

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3,434

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Anansix

USA . 2,098 parts In-Stock

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2,098

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Digiode

USA . 1,939 parts In-Stock

1+ parts

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1,939

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,314 parts In-Stock

1+ parts

$1.248

100+ parts

-

1k+ parts

$1.124

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1,314

$1.248

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$1.124

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MKK Technologies

India . 747 parts In-Stock

1+ parts

$2.348

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747

$2.348

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DigiPath Technology Company

USA . 747 parts In-Stock

1+ parts

$2.348

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747

$2.348

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Native Components

USA . 902 parts In-Stock

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$12.959

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902

$12.959

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Northwest PG Solutions

USA . 1,658 parts In-Stock

1+ parts

$14.255

100+ parts

$12.829

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1,658

$14.255

$12.829

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Corphita

USA . 2,948 parts In-Stock

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2,948

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Parana Technologies

USA . 1,074 parts In-Stock

1+ parts

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$1.493

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1,074

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$1.493

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Overview

Unlock the power of efficiency with the 2ST2480 from STMicroelectronics, a leader in innovative semiconductor solutions. This PNP power BJT excels in switching applications, delivering remarkable performance with robust reliability. Its compact design and versatile mounting options make it ideal for various electronic designs, ensuring maximum value for engineers and developers. Trust in STMicroelectronics for quality that enhances your projects and elevates your success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resilience, making it suitable for various environmental conditions.

Polarity or Channel Type: PNP

The PNP configuration enables easy integration in switching applications, providing effective control in various circuits.

Configuration: SINGLE

A single configuration simplifies design requirements and reduces complexity in circuit implementations.

Transistor Application: SWITCHING

Designed specifically for switching applications, it ensures efficient performance in controlling current flow.

Package Shape: RECTANGULAR

The rectangular shape provides easy mounting and allows effective utilization of space in PCB designs.

Terminal Form: THROUGH-HOLE

Through-hole termination ensures robust connections and stability in high-vibration environments.

No. of Terminals: 3

Having three terminals facilitates straightforward connections, ensuring easy integration into various circuit applications.

Maximum Power Dissipation (Abs): 20 W

With a maximum power dissipation of 20 W, it effectively handles substantial power without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount design allows for secure attachment to PCBs, enhancing mechanical stability during usage.

Minimum DC Current Gain (hFE): 15

A minimum hFE of 15 provides adequate gain for reliable operation in amplification and signal switching applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature indicates reliability and efficiency in demanding environments.

Maximum Collector-Emitter Voltage: 80 V

A maximum voltage rating of 80 V ensures compatibility with a wide range of applications and circuits.

Transistor Element Material: SILICON

Silicon material enhances performance, providing a good balance between efficiency and cost-effectiveness.

Maximum Collector Current (IC): 4 A

A maximum collector current of 4 A allows for the driving of high loads in various electronic applications.

Terminal Position: SINGLE

Single terminal position simplifies layout and reduces complexity in circuit design.

Case Connection: ISOLATED

Isolated case connection ensures safety and performance in high-voltage operations.

Nominal Transition Frequency (fT): 130 MHz

A transition frequency of 130 MHz enables high-speed switching, making it ideal for fast signal applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2ST2480 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2ST2480 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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