Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Power Bipolar Junction Transistors (BJT) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as power supplies, motor drives, and welding equipment.The Power BJT is a three-layer device that consists of an emitter, base, and collector region. The emitter and collector are heavily doped, while the base region is lightly doped. The power BJT works by controlling the flow of majority charge carriers (electrons or holes) from the emitter to the collector region through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.Power BJTs are designed to handle high current and voltage levels, and have a low on-resistance and high gain. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.Proper selection and use of Power BJTs are critical to ensure safe and reliable operation of power electronics systems. Power BJTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.
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BUL1403ED
STMicroelectronics
BUL1403ED by STMicroelectronics is a NPN Power BJT with 650V VCE, 3A IC, and 80W Ptot. Ideal for switching applications, it features a single configuration with built-in diode in a plastic/epoxy package suitable for flange mount. Operating up to 150 °C, it has hFE of min 4 and matte tin terminals.
3 A
650 V
SINGLE WITH BUILT-IN DIODE
4
TO-220AB
R-PSFM-T3
e3
1
3
150 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
NPN
80 W
Not Qualified
Other Transistors
NO
Matte Tin (Sn)
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
BUL903ED
BUL903ED by STMicroelectronics is a NPN Power BJT with 400V VCE, 5A IC, and 70W Ptot. Ideal for switching applications, it features a single configuration with built-in diode in a plastic/epoxy package. Operating up to 150 °C, it has hFE of min. 20 and comes in a flange mount style with matte tin terminals.
5 A
400 V
20
70 W
ST1802HI
ST1802HI by STMicroelectronics is a NPN BJT transistor with 600V VCEO, 10A IC, and 50W Ptot. Ideal for switching applications due to its single configuration and isolated case connection in a rectangular package.
ISOLATED
10 A
600 V
e0
50 W
TIN LEAD
BU808DFI
BU808DFI by STMicroelectronics is an NPN Darlington BJT designed for switching applications. It features a max VCEsat of 1.6V, supports up to 8A collector current, and operates at temperatures up to 150 °C. Ideal for high-power circuits with efficient thermal management.
8 A
700 V
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
60
TO-218
NOT SPECIFIED
52 W
3800 ns
1.6 V
BU941ZTFP
BU941ZTFP by STMicroelectronics is a NPN Power BJT with 55W power dissipation, ideal for amplifier applications. Featuring a Darlington configuration, it has a max collector-emitter voltage of 350V and max collector current of 15A. The package style is flange mount with matte tin terminal finish.
15 A
350 V
300
175 Cel
55 W
MATTE TIN
AMPLIFIER
BU941ZT
STMicroelectronics' BU941ZT is a NPN BJT with Darlington configuration, ideal for switching applications. It features 2V VCEsat, 150W power dissipation, and 15A collector current. With a max voltage of 350V and operating temperature of 175°C, it's suitable for high-power tasks in various industries.
COLLECTOR
180 W
150 W
2 V
BULD118D-1
BULD118D-1 by STMicroelectronics is a NPN Power BJT with 400V VCE, 2A IC, and 20W Ptot. Ideal for switching applications, it features a built-in diode and operates up to 150 °C. Package: PLASTIC/EPOXY, RECTANGULAR shape with TIN finish in an IN-LINE style.
HIGH RELIABILITY
2 A
8
TO-251AA
R-PSIP-T3
IN-LINE
20 W
TIN
4900 ns
1.5 V
BUB941ZT
STMicroelectronics BUB941ZT is a NPN Darlington transistor with built-in diode and resistor, ideal for amplifier applications. It features a max VCEsat of 1.8V, 150W power dissipation, and can handle up to 15A collector current. The package style is small outline with gull wing terminals for surface mount assembly.
TO-263AB
R-PSSO-G2
2
SMALL OUTLINE
245
YES
Matte Tin (Sn) - annealed
GULL WING
30
1.8 V
2SD2396K
ROHM
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;
60 V
1000
30 W
40 MHz
BUL128FP
BUL128FP by STMicroelectronics is a NPN Power BJT with 400V VCEO, 4A IC, and 31W Ptot. Ideal for switching applications, it has a single configuration in a rectangular package with through-hole terminals. Operating up to 150 °C, it features silicon transistor element material and matte tin terminal finish.
4 A
14
31 W
BUL138FP
BUL138FP by STMicroelectronics is a NPN Power BJT with 400V VCEO, 5A IC, and 33W Ptot. Ideal for switching applications, it has a min hFE of 8 and operates up to 150 °C. The package style is flange mount with through-hole terminals.
33 W
BA12003B
ROHM's BA12003B is a NPN BJT transistor with hFE of 1000, VCE of 55V, and IC of 0.35A. Ideal for switching applications due to its complex configuration. Comes in a rectangular package with 16 terminals for through-hole mounting.
.35 A
55 V
COMPLEX
R-PDIP-T16
7
16
DUAL
NTE196
Nte Electronics
NTE196 by Nte Electronics is a NPN BJT transistor with 50W power dissipation, 70V max collector-emitter voltage, and 7A max collector current. Ideal for switching applications due to its single configuration and silicon element material. Package style is flange mount with through-hole terminals.
7 A
70 V
2.3
4 MHz
NTE2349
NTE2349 by Nte Electronics is a NPN Power BJT with 300W power dissipation, 120V max collector-emitter voltage, and 50A max collector current. Ideal for high-power applications requiring Darlington configuration with built-in diode and resistor in a round package shape.
50 A
120 V
400
TO-3
O-MBFM-P2
METAL
ROUND
300 W
PIN/PEG
BOTTOM
NTE243
NTE243 by Nte Electronics is a NPN BJT with Darlington configuration, ideal for amplifier applications. With max power dissipation of 100W (abs) and 150W (ambient), it offers hFE of min 100. Featuring VCE of 80V and IC of 8A, this silicon transistor has a round package shape for flange mount.
80 V
100
100 W
NTE247
NTE247 by Nte Electronics is a NPN BJT with Darlington configuration, ideal for amplifier applications. With 150W max power dissipation and 100V max collector-emitter voltage, it offers high performance. Featuring built-in diode and resistor, this transistor has 12A max collector current.
12 A
100 V
NTE248
NTE248 by Nte Electronics is a PNP BJT with 150W power dissipation, 100V max collector-emitter voltage, and 12A max collector current. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. Package style is flange mount with round shape and metal body material.
PNP
BUL89
BUL89 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 110W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for high-performance electronic circuits.
10
110 W
STX112-AP
STX112-AP by STMicroelectronics is a high-performance NPN Darlington BJT designed for switching applications. It features a max power dissipation of 1.2W, a min DC current gain (hFE) of 500, and operates up to 150 °C. Its cylindrical package ensures efficient thermal management.
BUILT IN BIAS RESISTANCE RATIO IS 0.0067
500
TO-92
O-PBCY-W3
CYLINDRICAL
1.2 W
WIRE
STX112
STX112 by STMicroelectronics is a powerful NPN Darlington BJT designed for switching applications. It features a max power dissipation of 1.2W, a collector current of 2A, and operates up to 150 °C. Its cylindrical package ensures efficient thermal management in various electronic devices.
O-PBCY-T3
ST2408HI
ST2408HI by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 55W, operates up to 150 °C, and supports collector-emitter voltages up to 600V. Ideal for high-performance electronic circuits.
6
DXT13003EK-13
Diodes Incorporated
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 1.5 A; Package Body Material: PLASTIC/EPOXY;
1.5 A
460 V
5
TO-252
STD127DT4
STD127DT4 by STMicroelectronics is a NPN BJT transistor with 400V VCE, 4A IC, and hFE of 5. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mounting.
MJW0281AG
Onsemi
The Onsemi MJW0281AG is a NPN BJT transistor with 260V VCE, 15A IC, and 30MHz fT. Ideal for amplifier applications, it has a min hFE of 75 and comes in a plastic/epoxy package with through-hole terminals.
260 V
75
TO-247
Tin (Sn)
30 MHz
MJW0302AG
The Onsemi MJW0302AG is a PNP BJT transistor with 260V VCE, 15A IC, and 30MHz fT. Ideal for amplifier applications, it has a hFE of 75 and comes in a plastic/epoxy package with through-hole terminals.
NJL21193DG
NJL21193DG by Onsemi is a PNP BJT transistor with 250V VCE, 16A IC, and 4MHz fT. Ideal for amplifier applications due to its single configuration with built-in diode. Package style is flange mount with 5 terminals in a rectangular shape.
16 A
250 V
R-PSFM-T5
260
NJL21194DG
NJL21194DG by Onsemi is a NPN BJT transistor with 250V VCE, 16A IC, and 4MHz fT. Ideal for amplifier applications, it features a single configuration with built-in diode in a rectangular flange mount package.
TIP42G
TIP42G by Onsemi is a PNP BJT transistor with 65W power dissipation, 40V max. collector-emitter voltage, and 6A max. collector current. Ideal for switching applications, it has a min hFE of 15 and operates at up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.
6 A
40 V
15
65 W
3 MHz
MD1802FX
MD1802FX by STMicroelectronics is a NPN BJT transistor with 700V VCEO, 10A IC, and 57W Ptot. Ideal for switching applications due to its single configuration and high power dissipation capability in a rectangular package. Operates up to 150 °C with isolated case connection for reliable performance.
5.5
57 W
2STF2220
2STF2220 by STMicroelectronics is a PNP BJT transistor with 1.4W power dissipation, hFE of 75, and 20V VCE. Ideal for switching applications in small outline packages, operating up to 150 °C. Suitable for surface mount designs requiring high collector current of 1.5A.
20 V
R-PSSO-F3
1.4 W
FLAT
NJL0281DG
NJL0281DG by Onsemi is a NPN BJT with 260V VCEO, 15A IC, and 180W Ptot. Ideal for amplifier applications due to its single configuration with built-in diode. Operates at up to 150°C, featuring a transition frequency of 30MHz in a rectangular package style.
TO-264
NJL0302DG
NJL0302DG by Onsemi is a PNP BJT with 180W power dissipation, 260V max collector-emitter voltage, and 30MHz transition frequency. Ideal for amplifier applications due to its single configuration with built-in diode and high collector current of 15A.
NJL4281DG
NJL4281DG by Onsemi is a NPN BJT transistor with 350V VCEO, 15A IC, and 200W Ptot. Ideal for amplifier applications due to its hFE of 10 and fT of 35MHz. Packaged in PLASTIC/EPOXY with FLANGE MOUNT style for through-hole mounting.
200 W
35 MHz
NJL4302DG
NJL4302DG by Onsemi is a PNP BJT transistor with 5 terminals. It has a max power dissipation of 200W, operating temp of 150 °C, and max collector-emitter voltage of 350V. Ideal for amplifier applications due to its single configuration with built-in diode and silicon element material.
D44H11FP
D44H11FP by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max power dissipation of 36W, a collector-emitter voltage of 80V, and operates at up to 150 °C. Ideal for high-performance electronic circuits requiring reliable control.
40
36 W
2STW1695
2STW1695 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 100 W, operates up to 150 °C, and supports collector-emitter voltages of 140 V. Ideal for high-performance electronic circuits.
140 V
50
20 MHz
2STW4468
2STW4468 by STMicroelectronics is an NPN BJT designed for amplifier applications. It features a max power dissipation of 100 W, a collector-emitter voltage of 140 V, and operates up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.
TO-247AA
BUL3N7
BUL3N7 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 60W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for efficient circuit designs in various electronic devices.
60 W
BUL98
BUL98 by STMicroelectronics is a NPN Power BJT with 450V VCEO, 12A IC, and 110W Ptot. Ideal for switching applications due to its single configuration and high power dissipation capability. The transistor's silicon element and matte tin finish make it reliable for use in various industrial settings.
450 V
MD2103DFX
MD2103DFX by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 52W, operates up to 150 °C, and supports collector-emitter voltages up to 700V. Ideal for robust electronic designs requiring efficient performance.
SINGLE WITH BUILT-IN DIODE AND RESISTOR
6.5
STC03DE170HP
STC03DE170HP by STMicroelectronics is a NPN BJT transistor with 3A max collector current, 35.7W power dissipation, and hFE of 10. Ideal for switching applications, it comes in a plastic/epoxy package with through-hole terminals. Operating temp up to 125°C makes it suitable for various industrial uses.
SINGLE WITH BUILT-IN FET AND DIODE
R-PSFM-T4
125 Cel
35.7 W
STC03DE170HV
STC03DE170HV by STMicroelectronics is a NPN BJT transistor with 3A max collector current, 100W power dissipation, and hFE of 10. Ideal for switching applications, it has a single configuration with built-in FET and diode in a rectangular package suitable for flange mount.
STC04IE170HP
STC04IE170HP from STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 50W, operates at up to 150 °C, and supports a collector current of 4A. Ideal for efficient power management in electronic circuits.
STC04IE170HV
STC04IE170HV from STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 178W, operates at up to 150 °C, and supports a collector current of 4A. Ideal for high-performance electronic circuits.
178 W
STC08DE150HP
STC08DE150HP from STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 42W, supports up to 8A collector current, and operates at temperatures up to 125 °C. Ideal for efficient circuit designs with its compact flange mount package.
4.5
42 W
STC08DE150HV
STC08DE150HV from STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 156W, operates at up to 150 °C, and supports collector currents of 8A. Ideal for high-performance electronic circuits.
156 W
STC20DE90HP
STC20DE90HP by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 46W, a collector current of 20A, and a min DC gain (hFE) of 4. Ideal for efficient control in electronic circuits.
20 A
46 W
STP08IE120F4
STP08IE120F4 from STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 21W, supports up to 8A collector current, and operates at temperatures up to 150 °C. Ideal for efficient power management in electronic circuits.
TO-220
21 W
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