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STC03DE170HP

STMicroelectronics

STC03DE170HP by STMicroelectronics

STC03DE170HP by STMicroelectronics is a NPN BJT transistor with 3A max collector current, 35.7W power dissipation, and hFE of 10. Ideal for switching applications, it comes in a plastic/epoxy package with through-hole terminals. Operating temp up to 125°C makes it suitable for various industrial uses.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,675 parts In-Stock

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8,675

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Digiode

USA . 2,216 parts In-Stock

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2,216

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Anansix

USA . 1,952 parts In-Stock

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1,952

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Nova Conductors

Japan . 700 parts In-Stock

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700

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IDEA Electronic Components Group

UK . 2,216 parts In-Stock

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$0.314

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-

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$0.282

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2,216

$0.314

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$0.282

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Advanced Electronics

New Zealand . 40 parts In-Stock

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$0.424

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$0.386

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$0.348

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40

$0.424

$0.386

$0.348

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MKK Technologies

India . 1,057 parts In-Stock

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$0.590

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1,057

$0.590

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DigiPath Technology Company

USA . 1,057 parts In-Stock

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$0.590

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$0.590

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Aztec Data Supply Inc.

USA . 2,122 parts In-Stock

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$0.604

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$0.604

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Corohmni

South Africa . 259 parts In-Stock

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$1.068

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259

$1.068

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Semicontronic

India . 725 parts In-Stock

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$10.050

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$9.799

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$9.748

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725

$10.050

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$9.748

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AZTECH Wire

Italy . 656 parts In-Stock

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$14.689

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656

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Ampacity Inc.

Singapore . 489 parts In-Stock

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$62.050

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489

$62.050

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Argo Parts USA

USA . 2,855 parts In-Stock

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Corphita

USA . 2,111 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Continental Prestige Electronics

USA . 1,352 parts In-Stock

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Perfect Parts

USA . 1,167 parts In-Stock

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1,167

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Parana Technologies

USA . 693 parts In-Stock

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$0.375

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693

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$0.375

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Overview

Unlock the power of STMicroelectronics with the STC03DE170HP Power Bipolar Junction Transistor. This high-quality component offers unmatched reliability and performance, making it ideal for a wide range of switching applications. With a maximum power dissipation of 35.7W and a maximum collector current of 3A, this NPN transistor provides exceptional value and efficiency. Trust in STMicroelectronics for your electronic needs and experience the benefits of top-tier technology in every project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures durability and reliability for long-term use.

Polarity or Channel Type: NPN

NPN type transistors allow for high efficiency and fast switching speeds.

Configuration: SINGLE WITH BUILT-IN FET AND DIODE

The built-in FET and diode offer added convenience for circuit design and integration.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing efficient control of power flow.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration within circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections for stable performance.

No. of Terminals: 4

Four terminals enable versatile connectivity options for various circuit configurations.

Maximum Power Dissipation (Abs): 35.7 W

High power dissipation capability ensures reliable operation under heavy loads.

Package Style (Meter): FLANGE MOUNT

Flange mount style offers easy installation and secure mounting for stability.

Minimum DC Current Gain (hFE): 10

Minimum DC current gain of 10 ensures consistent amplification of signals.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures.

Transistor Element Material: SILICON

Silicon material offers excellent electrical properties and reliability for long-term performance.

Maximum Collector Current (IC): 3 A

High collector current capacity allows for handling of high power loads.

Terminal Finish: TIN

TIN terminal finish provides corrosion resistance and ensures consistent connection quality.

Terminal Position: SINGLE

Single terminal position simplifies circuit design and layout for easy integration.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STC03DE170HP attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

3 A

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T4

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STC03DE170HP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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