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STC08DE150HP

STMicroelectronics

STC08DE150HP by STMicroelectronics

STC08DE150HP from STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 42W, supports up to 8A collector current, and operates at temperatures up to 125 °C. Ideal for efficient circuit designs with its compact flange mount package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,087 parts In-Stock

1+ parts

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4,087

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Anansix

USA . 2,823 parts In-Stock

1+ parts

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2,823

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Digiode

USA . 1,910 parts In-Stock

1+ parts

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1,910

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 775 parts In-Stock

1+ parts

$0.729

100+ parts

-

1k+ parts

$0.656

10k+ parts

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775

$0.729

-

$0.656

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MKK Technologies

India . 65 parts In-Stock

1+ parts

$1.370

100+ parts

-

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65

$1.370

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DigiPath Technology Company

USA . 65 parts In-Stock

1+ parts

$1.370

100+ parts

-

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65

$1.370

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AZTECH Wire

Italy . 545 parts In-Stock

1+ parts

$14.030

100+ parts

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545

$14.030

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Corphita

USA . 2,133 parts In-Stock

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2,133

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Parana Technologies

USA . 1,663 parts In-Stock

1+ parts

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100+ parts

$0.871

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1,663

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$0.871

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Overview

Unlock the power of efficiency with the STC08DE150HP from STMicroelectronics, a leader in semiconductor innovation. This robust NPN bipolar junction transistor is engineered for optimal switching performance, making it perfect for a variety of applications—from industrial control systems to consumer electronics. With superior power handling and reliability, this component ensures longevity and consistent operation, delivering exceptional value and peace of mind for your projects. Elevate your designs with trusted quality!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy makes the transistor lightweight and cost-effective while providing adequate protection against environmental factors.

Polarity or Channel Type: NPN

NPN configuration is versatile and widely used in various applications, enhancing the transistor's compatibility with different circuit designs.

Configuration: SINGLE WITH BUILT-IN FET AND DIODE

The built-in FET and diode add functionality and reduce the number of components required in a circuit, simplifying the design.

Transistor Application: SWITCHING

Optimized for switching applications, this transistor is ideal for use in digital circuits and power management tasks.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient use of space on circuit boards and aids in heat dissipation.

Terminal Form: THROUGH-HOLE

Through-hole terminals enable robust mechanical support and are easy to solder, making them suitable for hand-built prototypes and circuit boards.

No. of Terminals: 4

Four terminals provide versatility in circuit design, allowing for various configurations and enhancing connectivity options.

Maximum Power Dissipation (Abs): 42 W

A high power dissipation capability allows the transistor to handle significant loads, making it suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

Flange mount style provides a strong mechanical connection and simplifies heat management, ensuring reliability under high load conditions.

Minimum DC Current Gain (hFE): 4.5

A minimum hFE of 4.5 ensures adequate amplification for various applications, enhancing the performance of the overall circuit.

Maximum Operating Temperature: 125 °C

A maximum operating temperature of 125 °C allows for operation in a wider range of environments, ensuring longevity and reliability in practical applications.

Transistor Element Material: SILICON

Silicon is a standard material for transistors, providing excellent performance characteristics and efficiency in electronic applications.

Maximum Collector Current (IC): 8 A

The capability to handle a maximum collector current of 8 A makes this transistor suitable for high-power applications.

Terminal Finish: TIN

Tin finish ensures good solderability and corrosion resistance, promoting reliable electrical connections in long-term usage.

Terminal Position: SINGLE

A single terminal position simplifies circuit layout, reducing the complexity and potential errors during assembly.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STC08DE150HP attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

8 A

Minimum DC Current Gain (hFE):

4.5

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T4

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STC08DE150HP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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