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STC08DE150HV

STMicroelectronics

STC08DE150HV by STMicroelectronics

STC08DE150HV from STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 156W, operates at up to 150 °C, and supports collector currents of 8A. Ideal for high-performance electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,611 parts In-Stock

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2,611

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Digiode

USA . 2,118 parts In-Stock

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2,118

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Anansix

USA . 766 parts In-Stock

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766

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 794 parts In-Stock

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$1.029

100+ parts

-

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$0.926

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794

$1.029

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$0.926

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MKK Technologies

India . 1,825 parts In-Stock

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$1.934

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1,825

$1.934

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DigiPath Technology Company

USA . 1,825 parts In-Stock

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$1.934

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1,825

$1.934

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AZTECH Wire

Italy . 677 parts In-Stock

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$16.460

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677

$16.460

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Corphita

USA . 2,932 parts In-Stock

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2,932

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Parana Technologies

USA . 937 parts In-Stock

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$1.230

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937

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$1.230

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Perfect Parts

USA . 2 parts In-Stock

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Overview

Elevate your projects with the STC08DE150HV from STMicroelectronics, a powerhouse in the realm of power transistors. Crafted for precision and reliability, this NPN transistor ensures efficient switching performance while handling high power dissipation. STMicroelectronics' commitment to quality guarantees that you're investing in durable and innovative solutions. Ideal for diverse applications, it empowers your designs with enhanced efficiency, making it the smart choice for engineers who demand excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers excellent durability and protection, making the product suitable for various environments.

Polarity or Channel Type: NPN

The NPN configuration is widely used, providing ease of use in common electronic applications.

Configuration: SINGLE WITH BUILT-IN FET AND DIODE

Having a built-in FET and diode streamlines circuit design by reducing the number of components needed.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor enhances performance in control circuits.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient space utilization on PCB layouts, facilitating compact designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical connections, ideal for high-stress environments.

No. of Terminals: 4

Four terminals allow for versatile circuit configurations, enhancing design flexibility.

Maximum Power Dissipation (Abs): 156 W

A high power dissipation rating enables the transistor to handle significant loads without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mounting provides enhanced stability and reliability in installations, suitable for demanding applications.

Minimum DC Current Gain (hFE): 4.5

A minimum current gain ensures effective signal amplification, making it suitable for a variety of tasks.

Maximum Operating Temperature: 150 °C

This high temperature tolerance allows the transistor to operate in extreme conditions without failure.

Transistor Element Material: SILICON

Silicon transistors are known for their reliability and efficiency, making them a favored choice in electronics.

Maximum Collector Current (IC): 8 A

With a maximum collector current of 8 A, this transistor is capable of handling significant loads effectively.

Terminal Finish: TIN

Tin finish provides excellent solderability and corrosion resistance, ensuring reliable long-term performance.

Terminal Position: SINGLE

Single terminal position simplifies PCB layout and assembly, reducing design complexity.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STC08DE150HV attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

8 A

Minimum DC Current Gain (hFE):

4.5

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T4

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STC08DE150HV Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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