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STC03DE170HV

STMicroelectronics

STC03DE170HV by STMicroelectronics

STC03DE170HV by STMicroelectronics is a NPN BJT transistor with 3A max collector current, 100W power dissipation, and hFE of 10. Ideal for switching applications, it has a single configuration with built-in FET and diode in a rectangular package suitable for flange mount.

Median Price

$3.606

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

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$3.606

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50

$3.606

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Chip Stock

USA . 5,500 parts In-Stock

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5,500

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Vyrian

USA . 4,277 parts In-Stock

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4,277

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Digiode

USA . 2,980 parts In-Stock

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2,980

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Anansix

USA . 1,648 parts In-Stock

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1,648

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ComSIT Distribution GmbH

Germany . 990 parts In-Stock

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990

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Component Sense

UK . 2 parts In-Stock

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2

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,363 parts In-Stock

1+ parts

$0.387

100+ parts

-

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$0.349

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1,363

$0.387

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$0.349

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Corohmni

South Africa . 11 parts In-Stock

1+ parts

$0.635

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11

$0.635

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MKK Technologies

India . 898 parts In-Stock

1+ parts

$0.728

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898

$0.728

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DigiPath Technology Company

USA . 898 parts In-Stock

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$0.728

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898

$0.728

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Continental Prestige Electronics

USA . 5,162 parts In-Stock

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$3.606

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$3.534

5,162

$3.606

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$3.534

Argo Parts USA

USA . 3,018 parts In-Stock

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$3.606

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3,018

$3.606

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Netroflash

USA . 2,000 parts In-Stock

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$3.606

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2,000

$3.606

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AZTECH Wire

Italy . 545 parts In-Stock

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$14.176

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545

$14.176

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Semicontronic

India . 714 parts In-Stock

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$35.050

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$34.174

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$33.998

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714

$35.050

$34.174

$33.998

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Ampacity Inc.

Singapore . 1,567 parts In-Stock

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$65.050

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1,567

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Component Stockers USA

USA . 232 parts In-Stock

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$99.990

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232

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Kepictronics

USA . 17,250 parts In-Stock

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RC Electronics

USA . 9,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,501 parts In-Stock

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Lixinc

USA . 5,886 parts In-Stock

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Perfect Parts

USA . 4,313 parts In-Stock

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Parana Technologies

USA . 1,009 parts In-Stock

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$0.463

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1,009

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$0.463

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Corphita

USA . 432 parts In-Stock

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Assy Fe

Spain . 9 parts In-Stock

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Overview

Unlock the power of efficient and reliable switching with the STC03DE170HV by STMicroelectronics. Crafted with precision and expertise, this Power Bipolar Junction Transistor offers unparalleled quality and performance. Whether you're looking to enhance your electronic devices or optimize your power management systems, this NPN transistor with built-in FET and diode is the perfect solution. With a maximum power dissipation of 100W and a maximum collector current of 3A, the STC03DE170HV provides exceptional value and benefits to customers seeking top-notch performance in their applications. Elevate your projects with the trusted quality and cutting-edge technology of STMicroelectronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the transistor easy to handle and long-lasting.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile and widely compatible.

Configuration: SINGLE WITH BUILT-IN FET AND DIODE

Having a built-in FET and diode simplifies circuit design and reduces the need for additional components, making this transistor convenient and efficient.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast and efficient switching capabilities.

Package Shape: RECTANGULAR

The rectangular shape makes it easy to mount and install the transistor in a circuit, providing convenience during assembly.

Terminal Form: THROUGH-HOLE

Through-hole terminals make it easy to solder and secure the transistor onto a circuit board, ensuring a reliable connection.

Maximum Power Dissipation (Abs): 100 W

With a high power dissipation rating, this transistor can handle large amounts of power without overheating, making it suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides a secure and stable mounting option, ensuring the transistor stays in place during operation.

Minimum DC Current Gain (hFE): 10

Having a minimum DC current gain of 10 ensures reliable amplification and signal processing in the circuit.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without compromising performance or reliability.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making this product an excellent choice for various electronic applications.

Maximum Collector Current (IC): 3 A

The high maximum collector current rating allows this transistor to handle large currents, making it suitable for high-power applications.

Terminal Finish: TIN

Tin terminal finish provides a reliable and low-resistance connection, ensuring optimal electrical performance and signal transmission.

Terminal Position: SINGLE

Having a single terminal position simplifies circuit connections and reduces the risk of errors during installation, making this transistor user-friendly.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STC03DE170HV attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

3 A

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T4

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STC03DE170HV Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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