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STC04IE170HV

STMicroelectronics

STC04IE170HV by STMicroelectronics

STC04IE170HV from STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 178W, operates at up to 150 °C, and supports a collector current of 4A. Ideal for high-performance electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,230 parts In-Stock

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4,230

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Digiode

USA . 2,504 parts In-Stock

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2,504

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Anansix

USA . 1,227 parts In-Stock

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1,227

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,025 parts In-Stock

1+ parts

$1.794

100+ parts

-

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$1.615

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1,025

$1.794

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$1.615

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MKK Technologies

India . 1,929 parts In-Stock

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$3.374

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1,929

$3.374

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DigiPath Technology Company

USA . 1,929 parts In-Stock

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$3.374

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1,929

$3.374

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AZTECH Wire

Italy . 729 parts In-Stock

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$21.760

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729

$21.760

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Kepictronics

USA . 5,203 parts In-Stock

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RC Electronics

USA . 5,000 parts In-Stock

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Corphita

USA . 2,621 parts In-Stock

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2,621

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Parana Technologies

USA . 493 parts In-Stock

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$2.145

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493

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$2.145

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Overview

Unlock unparalleled performance with the STC04IE170HV from STMicroelectronics, a trusted leader in power solutions. This high-quality NPN bipolar junction transistor excels in switching applications, delivering exceptional reliability and efficiency. With its robust design and built-in FET and diode, this versatile component is perfect for demanding environments. Elevate your projects with STMicroelectronics' innovation, ensuring durability and optimal performance for all your power needs!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the body material offers excellent durability and resistance to environmental factors, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are widely used in switching applications, allowing for efficient control of current flow, making this product versatile for numerous circuits.

Configuration: SINGLE WITH BUILT-IN FET AND DIODE

The integrated FET and diode enhance functionality by providing additional features in a single package, simplifying design and reducing component count.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can handle fast transitions, making it ideal for digital and analog circuit control.

Package Shape: RECTANGULAR

The rectangular shape ensures efficient use of space on PCBs, facilitating easier integration into various designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer robust mechanical support and stability in high-vibration environments, ensuring reliable connections.

No. of Terminals: 4

Having four terminals provides flexibility in connections and configurations, accommodating a range of circuit designs.

Maximum Power Dissipation (Abs): 178 W

A high power dissipation rating enables this transistor to handle substantial power loads without overheating, enhancing reliability in demanding applications.

Package Style (Meter): FLANGE MOUNT

Flange mount style allows for secure mounting to heat sinks or PCBs, promoting effective heat management and improving overall performance.

Minimum DC Current Gain (hFE): 4

A minimum hFE of 4 indicates reasonable gain, enabling effective amplification in circuits while maintaining stability.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can function reliably in high-temperature environments, suitable for industrial applications.

Transistor Element Material: SILICON

Silicon is a standard material for transistors, offering good performance characteristics, reliability, and cost-effectiveness.

Maximum Collector Current (IC): 4 A

The ability to handle a collector current up to 4 A makes this transistor suitable for high-power applications, extending its usability.

Terminal Finish: Matte Tin (Sn)

Matte tin terminal finish enhances solderability and provides corrosion resistance, ensuring reliable long-term connections.

Terminal Position: SINGLE

Single terminal positioning simplifies layout designs, making it easier to integrate into various circuit board configurations.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STC04IE170HV attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

4 A

Minimum DC Current Gain (hFE):

4

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T4

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STC04IE170HV Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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