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STC08IE120HP

STMicroelectronics

STC08IE120HP by STMicroelectronics

STC08IE120HP from STMicroelectronics is an NPN BJT designed for efficient switching applications. It features a max power dissipation of 48W, a collector current of 8A, and comes in a flange mount package with 4 terminals. Ideal for various electronic circuits requiring robust performance.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,931 parts In-Stock

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4,931

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Vyrian

USA . 3,119 parts In-Stock

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3,119

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Anansix

USA . 2,560 parts In-Stock

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2,560

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,669 parts In-Stock

1+ parts

$0.431

100+ parts

-

1k+ parts

$0.388

10k+ parts

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1,669

$0.431

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$0.388

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MKK Technologies

India . 358 parts In-Stock

1+ parts

$0.810

100+ parts

-

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358

$0.810

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DigiPath Technology Company

USA . 358 parts In-Stock

1+ parts

$0.810

100+ parts

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358

$0.810

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Corphita

USA . 2,869 parts In-Stock

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2,869

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Parana Technologies

USA . 1,849 parts In-Stock

1+ parts

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100+ parts

$0.515

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1,849

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$0.515

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Overview

Elevate your projects with the STC08IE120HP from STMicroelectronics, a leader in innovative semiconductor solutions. This robust NPN power transistor delivers exceptional switching capabilities, ensuring reliability and efficiency in various applications like motor control and power management. With its durable plastic/epoxy package and built-in FET and diode, you gain superior performance and longevity. Trust STMicroelectronics for quality that empowers your designs!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and resistance to environmental factors, ensuring longevity and reliability in various applications.

Polarity or Channel Type: NPN

NPN transistors are widely used due to their favorable characteristics for amplification and switching, making them suitable for a variety of electronic circuits.

Configuration: SINGLE WITH BUILT-IN FET AND DIODE

This configuration allows for simplified circuit design by integrating multiple functions into a single component, saving space and reducing complexity.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast response times and efficient performance, making it ideal for controlling power in electronic devices.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space utilization on PCBs, facilitating easier integration into compact designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust connections and are ideal for applications requiring high mechanical strength, ensuring reliability in demanding environments.

No. of Terminals: 4

Having four terminals allows for comprehensive connectivity options, enhancing the versatility of the transistor in various circuit configurations.

Maximum Power Dissipation (Abs): 48 W

A maximum power dissipation rating of 48 W indicates the transistor can handle significant power loads, making it suitable for high-performance applications.

Package Style (Meter): FLANGE MOUNT

Flange mount package style enhances stability and thermal performance, making installation straightforward and ensuring better heat dissipation.

Minimum DC Current Gain (hFE): 5

A minimum DC current gain ensures adequate amplification capabilities, supporting reliable operation in various electronic applications.

Transistor Element Material: SILICON

Silicon is a standard material for transistors due to its excellent semiconductor properties, contributing to efficiency and performance.

Maximum Collector Current (IC): 8 A

A maximum collector current of 8 A signifies the ability to handle high current loads, making this transistor suitable for powerful electrical applications.

Terminal Finish: TIN

Tin terminal finishing provides good solderability and corrosion resistance, ensuring long-term reliability in electronic assemblies.

Terminal Position: SINGLE

Single terminal position simplifies the layout and assembly process, making the device easier to integrate into various applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STC08IE120HP attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

8 A

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T4

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STC08IE120HP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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