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STC05DE120HV

STMicroelectronics

STC05DE120HV by STMicroelectronics

STC05DE120HV from STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 100W, a collector current of 5A, and operates up to 125 °C. Ideal for high-performance power management in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,501 parts In-Stock

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2,501

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Digiode

USA . 1,486 parts In-Stock

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1,486

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Vyrian

USA . 553 parts In-Stock

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553

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 747 parts In-Stock

1+ parts

$0.436

100+ parts

-

1k+ parts

$0.392

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747

$0.436

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$0.392

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MKK Technologies

India . 1,672 parts In-Stock

1+ parts

$0.820

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1,672

$0.820

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DigiPath Technology Company

USA . 1,672 parts In-Stock

1+ parts

$0.820

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1,672

$0.820

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Parana Technologies

USA . 1,830 parts In-Stock

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$0.521

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1,830

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$0.521

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Corphita

USA . 226 parts In-Stock

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226

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Overview

Unlock powerful switching capabilities with the STC05DE120HV from STMicroelectronics, a trusted leader in innovation. This robust NPN bipolar junction transistor is designed for high-performance applications, ensuring reliability and efficiency in your circuits. With its durable plastic/epoxy construction and impressive power dissipation, it delivers exceptional value. Elevate your projects with a solution that combines quality, versatility, and superior engineering from a manufacturer renowned for excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy construction ensures durability and protects the internal components, making it suitable for various operating environments.

Polarity or Channel Type: NPN

NPN transistors are widely used for amplification and switching applications, ensuring versatility in electronic circuits.

Configuration: SINGLE

A single configuration simplifies circuit design while ensuring reliable performance in various electronic applications.

Transistor Application: SWITCHING

Designed for switching applications, this BJT can efficiently control power and signal transitions, ideal for modern electronic devices.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient space utilization on circuit boards, making it easier to integrate into compact designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical connections and ease of soldering, enhancing reliability in circuit assemblies.

No. of Terminals: 4

Four terminals offer flexibility in circuit connections, allowing for various configurations to suit different applications.

Maximum Power Dissipation (Abs): 100 W

With a high power dissipation rating, this BJT can handle substantial loads, making it suitable for high-performance applications.

Package Style (Meter): FLANGE MOUNT

Flange mount design provides stable mounting options, ensuring secure installation in various devices and preventing movement.

Minimum DC Current Gain (hFE): 3

A minimum current gain of 3 ensures that this transistor can effectively amplify input signals, improving circuit performance.

Maximum Operating Temperature: 125 °C

Operating at high temperatures ensures reliability in demanding environments, making it suitable for thermal-intensive applications.

Transistor Element Material: SILICON

Silicon technology supports high efficiency and performance, which is essential for modern electronic applications.

Maximum Collector Current (IC): 5 A

With a collector current rating of 5 A, this BJT can manage significant current loads, ideal for power applications.

Terminal Position: SINGLE

Single terminal positioning simplifies layout design and reduces complexity in circuit routing.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STC05DE120HV attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

5 A

Configuration:

Minimum DC Current Gain (hFE):

3

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STC05DE120HV Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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