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STC08IE150HV

STMicroelectronics

STC08IE150HV by STMicroelectronics

STC08IE150HV by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 208 W, operates at up to 150 °C, and supports a collector current of 8 A. Ideal for robust electronic designs with through-hole mounting.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,591 parts In-Stock

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4,591

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Digiode

USA . 2,805 parts In-Stock

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2,805

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Anansix

USA . 1,677 parts In-Stock

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1,677

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 624 parts In-Stock

1+ parts

$0.615

100+ parts

-

1k+ parts

$0.554

10k+ parts

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624

$0.615

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$0.554

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MKK Technologies

India . 2,184 parts In-Stock

1+ parts

$1.157

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2,184

$1.157

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DigiPath Technology Company

USA . 2,184 parts In-Stock

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$1.157

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2,184

$1.157

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Corphita

USA . 4,329 parts In-Stock

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4,329

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Parana Technologies

USA . 470 parts In-Stock

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$0.736

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470

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$0.736

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Overview

Unlock unparalleled performance with the STC08IE150HV from STMicroelectronics! This robust NPN power BJT delivers exceptional switching capabilities, perfect for demanding applications. With its high power dissipation and impressive temperature resilience, it ensures reliable operation in any environment. Backed by ST's legacy of innovation and quality, this transistor empowers your projects with efficiency and durability, giving you the competitive edge you need.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures a lightweight and durable package, making it suitable for various environments.

Polarity or Channel Type: NPN

NPN configuration allows for efficient switching and is widely used in many electronic circuits.

Configuration: SINGLE WITH BUILT-IN FET AND DIODE

This integrated design minimizes space requirements and offers enhanced performance in switching applications.

Transistor Application: SWITCHING

Ideal for switching applications, providing reliability and efficiency in controlling electrical power.

Package Shape: RECTANGULAR

The rectangular shape is conducive to efficient space utilization on PCB layouts.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical support, suitable for high-power applications.

No. of Terminals: 4

A four-terminal configuration enhances flexibility in circuit design and connectivity.

Maximum Power Dissipation (Abs): 208 W

With a maximum power dissipation of 208W, this transistor can handle intensive applications without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mounting provides additional stability and ease of installation, especially in powering circuits.

Minimum DC Current Gain (hFE): 4.5

A minimum current gain of 4.5 indicates reliable amplification characteristics, enhancing overall performance.

Maximum Operating Temperature: 150 °C

Able to operate at high temperatures, this transistor is suitable for applications in harsh environments.

Transistor Element Material: SILICON

Silicon material offers excellent thermal stability and performance, making it a standard choice in transistor design.

Maximum Collector Current (IC): 8 A

With a maximum collector current of 8A, this transistor is capable of driving larger loads effectively.

Terminal Finish: TIN

Tin terminal finish improves solderability and corrosion resistance, ensuring reliable connections.

Terminal Position: SINGLE

Single terminal positioning simplifies the layout and installation process in circuit designs.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STC08IE150HV attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

8 A

Minimum DC Current Gain (hFE):

4.5

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T4

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STC08IE150HV Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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