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STC03DE220HV

STMicroelectronics

STC03DE220HV by STMicroelectronics

STC03DE220HV by STMicroelectronics is a NPN BJT transistor with 3A IC, 166W Pd, and hFE of 5. Ideal for switching applications, it comes in a rectangular package with through-hole terminals. Operating up to 125°C, it features a built-in FET and diode for efficient power management.

Median Price

$4.901

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$4.901

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50

$4.901

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Vyrian

USA . 8,200 parts In-Stock

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8,200

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Anansix

USA . 1,656 parts In-Stock

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1,656

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Digiode

USA . 521 parts In-Stock

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521

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Chip Stock

USA . 132 parts In-Stock

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132

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,860 parts In-Stock

1+ parts

$0.816

100+ parts

-

1k+ parts

$0.734

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1,860

$0.816

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$0.734

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MKK Technologies

India . 181 parts In-Stock

1+ parts

$1.535

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181

$1.535

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DigiPath Technology Company

USA . 181 parts In-Stock

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$1.535

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181

$1.535

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Ampacity Inc.

Singapore . 1,346 parts In-Stock

1+ parts

$3.050

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1,346

$3.050

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Continental Prestige Electronics

USA . 871 parts In-Stock

1+ parts

$4.901

100+ parts

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$4.803

871

$4.901

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$4.803

Netroflash

USA . 100 parts In-Stock

1+ parts

$4.901

100+ parts

-

1k+ parts

$4.656

10k+ parts

$4.558

100

$4.901

-

$4.656

$4.558

AZTECH Wire

Italy . 639 parts In-Stock

1+ parts

$14.795

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639

$14.795

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Corphita

USA . 3,135 parts In-Stock

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Argo Parts USA

USA . 2,081 parts In-Stock

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2,081

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Parana Technologies

USA . 474 parts In-Stock

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$0.976

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474

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$0.976

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Overview

Elevate your power management solutions with the STC03DE220HV by STMicroelectronics. This high-quality Power Bipolar Junction Transistor offers unparalleled performance and reliability, thanks to the trusted manufacturer's reputation for excellence. Ideal for switching applications, this NPN transistor with built-in FET and diode provides a seamless solution for a wide range of electronic systems. Experience the value and benefits of this product with its maximum power dissipation of 166W and maximum collector current of 3A, making it a versatile choice for your power control needs. Choose STMicroelectronics for superior quality and performance in every application.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and lightweight, making the transistor easy to handle and install.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, providing versatility in circuit design.

Configuration: SINGLE WITH BUILT-IN FET AND DIODE

The built-in FET and diode enhance the functionality of the transistor, allowing for more efficient switching performance.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in various electronic circuits.

Package Shape: RECTANGULAR

The rectangular shape of the package provides easy mounting and alignment in circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals are sturdy and can withstand high temperatures, ensuring a secure connection in the circuit.

Maximum Power Dissipation (Abs): 166 W

With a high power dissipation capacity, this transistor can handle high power loads without overheating.

Package Style (Meter): FLANGE MOUNT

The flange mount design simplifies the installation process and provides mechanical stability in the circuit.

Minimum DC Current Gain (hFE): 5

A higher minimum DC current gain ensures consistent amplification performance across different operating conditions.

Maximum Operating Temperature: 125 °C

With a high operating temperature range, this transistor can withstand harsh environmental conditions without performance degradation.

Transistor Element Material: SILICON

Silicon is a widely used semiconductor material known for its reliability and efficiency in electronic devices.

Maximum Collector Current (IC): 3 A

The high collector current rating allows this transistor to handle large current loads in switching applications.

Terminal Finish: Matte Tin (Sn)

Matte tin finish provides good solderability and corrosion resistance, ensuring a reliable electrical connection.

Terminal Position: SINGLE

A single terminal position simplifies the installation process and avoids confusion during circuit assembly.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STC03DE220HV attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

3 A

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T4

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STC03DE220HV Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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