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MD2103DFX

STMicroelectronics

MD2103DFX by STMicroelectronics

MD2103DFX by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 52W, operates up to 150 °C, and supports collector-emitter voltages up to 700V. Ideal for robust electronic designs requiring efficient performance.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,385 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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4,385

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-

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Anansix

USA . 2,754 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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2,754

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Digiode

USA . 1,361 parts In-Stock

1+ parts

-

100+ parts

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1,361

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$0.906

100+ parts

$0.824

1k+ parts

$0.743

10k+ parts

-

350

$0.906

$0.824

$0.743

-

IDEA Electronic Components Group

UK . 2,275 parts In-Stock

1+ parts

$1.729

100+ parts

-

1k+ parts

$1.556

10k+ parts

-

2,275

$1.729

-

$1.556

-

MKK Technologies

India . 1,450 parts In-Stock

1+ parts

$3.251

100+ parts

-

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-

10k+ parts

-

1,450

$3.251

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DigiPath Technology Company

USA . 1,450 parts In-Stock

1+ parts

$3.251

100+ parts

-

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-

10k+ parts

-

1,450

$3.251

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AZTECH Wire

Italy . 135 parts In-Stock

1+ parts

$9.130

100+ parts

-

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-

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135

$9.130

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-

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Alle Elektronik GmbH

Germany . 4,689 parts In-Stock

1+ parts

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4,689

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Kepictronics

USA . 2,600 parts In-Stock

1+ parts

-

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2,600

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Parana Technologies

USA . 2,041 parts In-Stock

1+ parts

-

100+ parts

$2.067

1k+ parts

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2,041

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$2.067

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Corphita

USA . 742 parts In-Stock

1+ parts

-

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742

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Overview

Unlock the potential of your applications with the MD2103DFX from STMicroelectronics, a trusted name in power solutions. This high-quality NPN power transistor offers exceptional reliability and robust performance for switching tasks, ensuring efficient operation in demanding environments. Boasting a compact design and built-in diode and resistor, it delivers unmatched value, enabling seamless integration into various electronic projects while enhancing durability and efficiency. Experience superior quality and innovation with STMicroelectronics!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures reliability and resilience in various environmental conditions.

Polarity or Channel Type: NPN

NPN configuration allows for effective switching applications, making it suitable for various electronic circuits.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

This integrated design simplifies circuit layout and enhances performance by reducing component count.

Transistor Application: SWITCHING

Specifically optimized for switching applications, this transistor is ideal for power management in diverse devices.

Package Shape: RECTANGULAR

The rectangular shape facilitates efficient heat dissipation and easier integration into circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole mounting provides robust mechanical support and is ideal for high-power applications.

No. of Terminals: 3

With three terminals, this transistor enables easy connection and control for both collectors and emitters.

Maximum Power Dissipation (Abs): 52 W

A high power dissipation capability allows this transistor to manage heat effectively, ensuring reliable performance.

Package Style (Meter): FLANGE MOUNT

Flange mount design offers stability and ease of installation in various configurations and systems.

Minimum DC Current Gain (hFE): 6.5

With a minimum gain of 6.5, this transistor effectively amplifies current, improving circuit efficiency.

Maximum Operating Temperature: 150 °C

A high operating temperature limit ensures reliable performance even in demanding conditions.

Maximum Collector-Emitter Voltage: 700 V

Able to handle high voltages, this transistor is great for high-power applications across various industries.

Transistor Element Material: SILICON

Silicon material contributes to great thermal conductivity, stability, and durability for long-lasting performance.

Maximum Collector Current (IC): 6 A

Supports high collector current, making it suitable for powerful switching applications in various devices.

Terminal Finish: MATTE TIN

Matte tin finish provides excellent solderability and corrosion resistance, enhancing reliability in connections.

Terminal Position: SINGLE

The single terminal position simplifies design and integration into both new and existing circuits.

Case Connection: ISOLATED

Isolated case connection improves safety and prevents electrical interference, making it a reliable choice for sensitive applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MD2103DFX attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

700 V

Minimum DC Current Gain (hFE):

6.5

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MD2103DFX Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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