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MD2103DFH

STMicroelectronics

MD2103DFH by STMicroelectronics

STMicroelectronics' MD2103DFH is a NPN BJT transistor with 700V VCEO and 6A IC, ideal for switching applications. It features a built-in diode and resistor, with a max power dissipation of 38W at 150 °C. The package is through-hole, isolated case connection in plastic/epoxy material.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,648 parts In-Stock

1+ parts

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2,648

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Vyrian

USA . 2,333 parts In-Stock

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2,333

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Digiode

USA . 862 parts In-Stock

1+ parts

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862

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,472 parts In-Stock

1+ parts

$1.138

100+ parts

-

1k+ parts

$1.024

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1,472

$1.138

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$1.024

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MKK Technologies

India . 973 parts In-Stock

1+ parts

$2.140

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973

$2.140

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DigiPath Technology Company

USA . 973 parts In-Stock

1+ parts

$2.140

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973

$2.140

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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Corphita

USA . 4,324 parts In-Stock

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4,324

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Parana Technologies

USA . 829 parts In-Stock

1+ parts

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$1.361

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829

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$1.361

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Overview

Upgrade your power management solutions with the MD2103DFH by STMicroelectronics. Known for their cutting-edge technology and superior quality, STMicroelectronics delivers reliable and efficient Power Bipolar Junction Transistors (BJTs) like no other. With its NPN configuration, built-in diode and resistor, and maximum collector-emitter voltage of 700V, this transistor is perfect for switching applications. Enjoy the benefits of a maximum power dissipation of 38W, high DC current gain, and a temperature range up to 150 °C. Trust STMicroelectronics to provide you with the value and performance you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching circuits, offering versatile applications.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

Convenient design with integrated diode and resistor for simplified circuitry and enhanced efficiency.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring reliable and efficient performance.

Package Shape: RECTANGULAR

Rectangular shape for easy mounting and compatibility with various PCB layouts.

Terminal Form: THROUGH-HOLE

Through-hole terminals for secure connection and ease of soldering during assembly.

Maximum Power Dissipation (Abs): 38 W

High power dissipation capability allows for handling significant power loads without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style for secure and stable installation in various electronic devices.

Minimum DC Current Gain (hFE): 6.5

Sufficient DC current gain for reliable amplification and switching operations.

Maximum Operating Temperature: 150 °C

High maximum operating temperature to withstand elevated temperatures in diverse environments.

Maximum Collector-Emitter Voltage: 700 V

High collector-emitter voltage rating for handling high voltage applications.

Transistor Element Material: SILICON

Silicon material provides excellent electrical properties and reliability for the transistor element.

Maximum Collector Current (IC): 6 A

High collector current rating for handling relatively high current levels in the circuit.

Terminal Finish: TIN

Tin terminal finish for good conductivity and reliable soldering connections.

Terminal Position: SINGLE

Single terminal position for easy installation and integration within electronic circuits.

Case Connection: ISOLATED

Isolated case connection for improved safety and reduced risk of short circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MD2103DFH attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

700 V

Minimum DC Current Gain (hFE):

6.5

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MD2103DFH Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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