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TIP42G

Onsemi

TIP42G by Onsemi

TIP42G by Onsemi is a PNP BJT transistor with 65W power dissipation, 40V max. collector-emitter voltage, and 6A max. collector current. Ideal for switching applications, it has a min hFE of 15 and operates at up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

$0.539

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,088 parts In-Stock

1+ parts

$0.458

100+ parts

$0.348

1k+ parts

$0.313

10k+ parts

$0.301

1,088

$0.458

$0.348

$0.313

$0.301

Chip1Stop

Japan . 1,288 parts In-Stock

1+ parts

$0.606

100+ parts

$0.382

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-

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1,288

$0.606

$0.382

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Mouser Electronics

USA . 277 parts In-Stock

1+ parts

$1.130

100+ parts

$0.640

1k+ parts

$0.452

10k+ parts

$0.446

277

$1.130

$0.640

$0.452

$0.446

DigiKey

USA . 186 parts In-Stock

1+ parts

$1.690

100+ parts

$0.712

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-

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186

$1.690

$0.712

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Rochester

USA . 19,636 parts In-Stock

1+ parts

-

100+ parts

$0.520

1k+ parts

$0.431

10k+ parts

$0.385

19,636

-

$0.520

$0.431

$0.385

Verical

USA . 15,993 parts In-Stock

1+ parts

-

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$0.539

10k+ parts

$0.481

15,993

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$0.539

$0.481

Flip Electronics (Authorized)

USA . 700 parts In-Stock

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-

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700

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Element14

Singapore . 483 parts In-Stock

1+ parts

-

100+ parts

$0.522

1k+ parts

$0.418

10k+ parts

$0.340

483

-

$0.522

$0.418

$0.340

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,036 parts In-Stock

1+ parts

$0.348

100+ parts

-

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2,036

$0.348

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.441

100+ parts

-

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100

$0.441

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TME

Poland . 115 parts In-Stock

1+ parts

$0.759

100+ parts

$0.297

1k+ parts

$0.277

10k+ parts

-

115

$0.759

$0.297

$0.277

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Chip Stock

USA . 48,000 parts In-Stock

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48,000

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Vyrian

USA . 11,894 parts In-Stock

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Flip Electronics

USA . 700 parts In-Stock

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700

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Zilex Electronics Inc.

Canada . 550 parts In-Stock

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550

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 4,086 parts In-Stock

1+ parts

$0.299

100+ parts

-

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4,086

$0.299

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Corphita

USA . 1,010 parts In-Stock

1+ parts

$0.329

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1,010

$0.329

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Corohmni

South Africa . 308 parts In-Stock

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$0.425

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308

$0.425

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Continental Prestige Electronics

USA . 6 parts In-Stock

1+ parts

$0.891

100+ parts

$0.647

1k+ parts

$0.338

10k+ parts

$0.318

6

$0.891

$0.647

$0.338

$0.318

Microchip USA

USA . 2,828 parts In-Stock

1+ parts

$6.630

100+ parts

$6.590

1k+ parts

$6.570

10k+ parts

$6.550

2,828

$6.630

$6.590

$6.570

$6.550

Perfect Parts

USA . 9,613 parts In-Stock

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9,613

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SupplyDigital Components

Austria . 7,093 parts In-Stock

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7,093

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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TANS Electronics

Latvia . 4,173 parts In-Stock

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4,173

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Kulean Microsystems

USA . 3,799 parts In-Stock

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3,799

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Problanco Electronics

Mexico . 3,160 parts In-Stock

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UHIMA Technologies

Türkiye . 665 parts In-Stock

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665

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ChipstoGo Electronic ltd

UK . 50 parts In-Stock

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50

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Overview

Get ready to elevate your power applications with the TIP42G by Onsemi. Known for its superior quality and reliability, Onsemi delivers top-notch Power Bipolar Junction Transistors that are perfect for switching operations. The TIP42G offers a maximum collector-emitter voltage of 40V and a maximum power dissipation of 65W, making it a powerful and efficient choice for your projects. With a single configuration and PNP polarity, this transistor provides ease of use and flexibility. Trust Onsemi to provide you with the performance and value you need for all your power needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the transistor, making it durable and reliable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-power switching applications, making this product suitable for applications requiring efficient power control.

Configuration: SINGLE

Single configuration simplifies circuit design and implementation, making it easier to integrate into different electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can handle high current and voltage levels, making it ideal for power control circuits.

Maximum Power Dissipation (Abs): 65 W

With a high maximum power dissipation capability, this transistor can efficiently handle power dissipation, ensuring reliable operation under varying load conditions.

Maximum Collector-Emitter Voltage: 40 V

The high maximum collector-emitter voltage rating allows this transistor to be used in applications where higher voltage levels are present, providing versatility and flexibility in circuit design.

Maximum Collector Current (IC): 6 A

With a high maximum collector current rating, this transistor can handle significant current flow, making it suitable for switching high-power loads.

Nominal Transition Frequency (fT): 3 MHz

The high nominal transition frequency enables this transistor to switch on and off at a fast rate, making it suitable for high-frequency applications where rapid switching is required.

Technical Specifications

Power Bipolar Junction Transistors (BJT) TIP42G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

TIP42G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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