Loading...

STP08IE120F4

STMicroelectronics

STP08IE120F4 by STMicroelectronics

STP08IE120F4 from STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 21W, supports up to 8A collector current, and operates at temperatures up to 150 °C. Ideal for efficient power management in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,408 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,408

-

-

-

-

Digiode

USA . 4,546 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,546

-

-

-

-

Anansix

USA . 852 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

852

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 234 parts In-Stock

1+ parts

$0.848

100+ parts

-

1k+ parts

$0.763

10k+ parts

-

234

$0.848

-

$0.763

-

MKK Technologies

India . 2,177 parts In-Stock

1+ parts

$1.595

100+ parts

-

1k+ parts

-

10k+ parts

-

2,177

$1.595

-

-

-

DigiPath Technology Company

USA . 2,177 parts In-Stock

1+ parts

$1.595

100+ parts

-

1k+ parts

-

10k+ parts

-

2,177

$1.595

-

-

-

AZTECH Wire

Italy . 452 parts In-Stock

1+ parts

$10.310

100+ parts

-

1k+ parts

-

10k+ parts

-

452

$10.310

-

-

-

Ampacity Inc.

Singapore . 1,366 parts In-Stock

1+ parts

$46.050

100+ parts

-

1k+ parts

-

10k+ parts

-

1,366

$46.050

-

-

-

Corphita

USA . 3,549 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,549

-

-

-

-

Parana Technologies

USA . 1,151 parts In-Stock

1+ parts

-

100+ parts

$1.014

1k+ parts

-

10k+ parts

-

1,151

-

$1.014

-

-

Kepictronics

USA . 96 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

96

-

-

-

-

Overview

Elevate your projects with the STP08IE120F4 from STMicroelectronics, a leader in innovative semiconductor solutions. This powerful NPN transistor is engineered for exceptional switching performance and reliability, making it ideal for a wide range of applications—from automotive to industrial controls. With its robust design and superior thermal capabilities, you can trust the STP08IE120F4 to deliver unparalleled efficiency and durability, ensuring your systems run smoothly and effectively. Experience the difference in quality and performance that only STMicroelectronics can offer!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy in the package ensures durability and protection from environmental factors, making the transistor reliable for long-term use.

Polarity or Channel Type: NPN

As an NPN transistor, it is suitable for switching and amplification applications, providing versatility in circuit designs.

Configuration: SINGLE WITH BUILT-IN FET AND DIODE

The built-in FET and diode simplify circuit designs and improve performance by reducing the number of external components needed.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers high efficiency in controlling power delivery in electronic circuits.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient layout in circuit boards, optimizing space and heat dissipation.

Terminal Form: THROUGH-HOLE

Through-hole terminal form ensures secure mounting and better mechanical stability in demanding applications.

No. of Terminals: 4

Four terminals provide flexibility in connections and make it easier to integrate with various circuit configurations.

Maximum Power Dissipation (Abs): 21 W

A maximum power dissipation of 21 W enables the transistor to handle high power loads, making it well-suited for power applications.

Package Style (Meter): FLANGE MOUNT

Flange mount style enhances heat management capabilities, allowing for better thermal performance in high-power applications.

Minimum DC Current Gain (hFE): 5

A minimum DC current gain of 5 provides adequate amplification for various applications, ensuring operational efficiency.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor remains operational under high-temperature conditions, enhancing reliability.

Transistor Element Material: SILICON

Silicon as the element material provides excellent electrical properties, ensuring effective performance and efficiency in electronic applications.

Maximum Collector Current (IC): 8 A

A maximum collector current of 8 A allows the transistor to support significant load currents, making it ideal for high-power designs.

Terminal Position: SINGLE

Single terminal positioning simplifies PCB design and allows for easier routing of connections.

Case Connection: ISOLATED

Isolated case connection enhances safety in circuit applications by preventing inadvertent short circuits.

Maximum Time At Peak Reflow Temperature (s): 40

A maximum reflow time of 40 seconds helps ensure soldering quality while minimizing the risk of thermal damage.

Peak Reflow Temperature °C: 245

A reflow temperature of 245 °C enables compatibility with modern soldering techniques, ensuring ease of assembly and reliability.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STP08IE120F4 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

8 A

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-220

JESD-30 Code:

R-PSFM-T4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

245

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STP08IE120F4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 1