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STP03D200

STMicroelectronics

STP03D200 by STMicroelectronics

STP03D200 by STMicroelectronics is a NPN Darlington transistor with max. collector-emitter voltage of 1200V and max. power dissipation of 40W. Ideal for switching applications, it has a min DC current gain of 350 and operates at up to 150°C, making it suitable for high-power tasks.

Median Price

$9.510

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 168 parts In-Stock

1+ parts

$8.190

100+ parts

$4.180

1k+ parts

$4.170

10k+ parts

-

168

$8.190

$4.180

$4.170

-

Mouser Electronics

USA . 1,091 parts In-Stock

1+ parts

$9.510

100+ parts

$4.840

1k+ parts

$4.300

10k+ parts

-

1,091

$9.510

$4.840

$4.300

-

DigiKey

USA . 894 parts In-Stock

1+ parts

$9.510

100+ parts

$4.839

1k+ parts

$4.306

10k+ parts

-

894

$9.510

$4.839

$4.306

-

Newark

USA . 90 parts In-Stock

1+ parts

$9.800

100+ parts

$6.190

1k+ parts

$5.780

10k+ parts

-

90

$9.800

$6.190

$5.780

-

Element14

Singapore . 821 parts In-Stock

1+ parts

$14.040

100+ parts

$9.860

1k+ parts

$9.730

10k+ parts

-

821

$14.040

$9.860

$9.730

-

EBV Elektronik

Germany . 21,900 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

21,900

-

-

-

-

Avnet

USA . 900 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

900

-

-

-

-

RS (Exports)

UK . 1 parts In-Stock

1+ parts

-

100+ parts

$7.928

1k+ parts

$6.811

10k+ parts

-

1

-

$7.928

$6.811

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 750 parts In-Stock

1+ parts

$5.598

100+ parts

-

1k+ parts

-

10k+ parts

-

750

$5.598

-

-

-

Digiode

USA . 1,328 parts In-Stock

1+ parts

$7.134

100+ parts

-

1k+ parts

-

10k+ parts

-

1,328

$7.134

-

-

-

IBS Electronics

USA . 5,300 parts In-Stock

1+ parts

-

100+ parts

$6.241

1k+ parts

$6.171

10k+ parts

-

5,300

-

$6.241

$6.171

-

Vyrian

USA . 2,841 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,841

-

-

-

-

Anansix

USA . 1,057 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,057

-

-

-

-

ComSIT Distribution GmbH

Germany . 240 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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240

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 650 parts In-Stock

1+ parts

$0.550

100+ parts

-

1k+ parts

$0.495

10k+ parts

-

650

$0.550

-

$0.495

-

MKK Technologies

India . 261 parts In-Stock

1+ parts

$1.035

100+ parts

-

1k+ parts

-

10k+ parts

-

261

$1.035

-

-

-

DigiPath Technology Company

USA . 261 parts In-Stock

1+ parts

$1.035

100+ parts

-

1k+ parts

-

10k+ parts

-

261

$1.035

-

-

-

Semicontronic

India . 2,999 parts In-Stock

1+ parts

$3.780

100+ parts

$3.686

1k+ parts

$3.667

10k+ parts

-

2,999

$3.780

$3.686

$3.667

-

Ampacity Inc.

Singapore . 2,939 parts In-Stock

1+ parts

$4.550

100+ parts

-

1k+ parts

-

10k+ parts

-

2,939

$4.550

-

-

-

Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$5.486

100+ parts

-

1k+ parts

$5.266

10k+ parts

-

2,000

$5.486

-

$5.266

-

Corphita

USA . 3,640 parts In-Stock

1+ parts

$6.759

100+ parts

-

1k+ parts

-

10k+ parts

-

3,640

$6.759

-

-

-

Continental Prestige Electronics

USA . 686 parts In-Stock

1+ parts

$8.210

100+ parts

$5.700

1k+ parts

-

10k+ parts

-

686

$8.210

$5.700

-

-

Eastek

USA . 20,050 parts In-Stock

1+ parts

-

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-

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20,050

-

-

-

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Lixinc

USA . 15,492 parts In-Stock

1+ parts

-

100+ parts

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15,492

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-

-

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A-Z Elektronik GmbH

Germany . 5,069 parts In-Stock

1+ parts

-

100+ parts

-

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5,069

-

-

-

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RC Electronics

USA . 2,765 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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2,765

-

-

-

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Argo Parts USA

USA . 1,812 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

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1,812

-

-

-

-

Parana Technologies

USA . 690 parts In-Stock

1+ parts

-

100+ parts

$0.658

1k+ parts

-

10k+ parts

-

690

-

$0.658

-

-

iodParts Technologies Inc.

India . 240 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

240

-

-

-

-

Authorized Procurement Solutions

USA . 50 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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50

-

-

-

-

Computer Components Inc. - USA

USA . 50 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

50

-

-

-

-

Overview

Upgrade your electronic devices with the STP03D200 Power Bipolar Junction Transistor by STMicroelectronics. Known for their superior quality and reliability, STMicroelectronics delivers cutting-edge technology to meet all your switching needs. Ideal for a wide range of applications, this NPN Darlington transistor offers maximum power dissipation of 40W and a maximum collector-emitter voltage of 1200V. With a minimum DC current gain of 350, this transistor ensures optimal performance and efficiency in your projects. Trust STMicroelectronics to provide you with the best solutions for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering good performance characteristics.

Configuration: DARLINGTON

Darlington configuration provides high current gain and allows for use in applications requiring high switching speeds.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable operation.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and space-saving in circuit designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of installation in circuit boards.

Maximum Power Dissipation (Abs): 40 W

High power dissipation capability allows for handling of high power applications without risk of damage.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides stability and ease of mounting in various applications.

Minimum DC Current Gain (hFE): 350

High DC current gain ensures consistent and reliable amplification of signals.

Maximum Operating Temperature: 150 °C

High operating temperature range allows for use in demanding environments without compromising performance.

Maximum Collector-Emitter Voltage: 1200 V

High collector-emitter voltage rating enables handling of high voltage applications with safety and reliability.

Transistor Element Material: SILICON

Silicon material offers excellent performance characteristics and reliability in transistor operation.

Maximum Collector Current (IC): 0.1 A

Allows for handling of moderate current levels, suitable for various switching and amplification applications.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and prevents oxidation, ensuring reliable connections.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection in circuit designs.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STP03D200 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Minimum DC Current Gain (hFE):

350

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STP03D200 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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