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STC20DE90HP

STMicroelectronics

STC20DE90HP by STMicroelectronics

STC20DE90HP by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 46W, a collector current of 20A, and a min DC gain (hFE) of 4. Ideal for efficient control in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,948 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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7,948

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-

-

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Digiode

USA . 4,882 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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4,882

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-

-

-

Anansix

USA . 2,550 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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2,550

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-

-

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Bristol Electronics

USA . 7 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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7

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,181 parts In-Stock

1+ parts

$0.511

100+ parts

-

1k+ parts

$0.460

10k+ parts

-

1,181

$0.511

-

$0.460

-

MKK Technologies

India . 1,144 parts In-Stock

1+ parts

$0.960

100+ parts

-

1k+ parts

-

10k+ parts

-

1,144

$0.960

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-

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DigiPath Technology Company

USA . 1,144 parts In-Stock

1+ parts

$0.960

100+ parts

-

1k+ parts

-

10k+ parts

-

1,144

$0.960

-

-

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AZTECH Wire

Italy . 854 parts In-Stock

1+ parts

$21.790

100+ parts

-

1k+ parts

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10k+ parts

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854

$21.790

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-

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QUARKTWIN TECHNOLOGY LTD

USA . 3,476 parts In-Stock

1+ parts

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100+ parts

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3,476

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Corphita

USA . 3,055 parts In-Stock

1+ parts

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3,055

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Parana Technologies

USA . 1,033 parts In-Stock

1+ parts

-

100+ parts

$0.610

1k+ parts

-

10k+ parts

-

1,033

-

$0.610

-

-

Overview

Elevate your electronic designs with the STC20DE90HP from STMicroelectronics, a trusted leader in innovative semiconductor solutions. This high-performance NPN transistor combines robust switching capability with exceptional power handling, making it ideal for diverse applications—from industrial automation to consumer electronics. Experience reliability and efficiency that empowers your projects, ensuring optimal performance and longevity while simplifying your design process. Choose STMicroelectronics for quality you can trust!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy construction provides durability and protection against environmental factors, making this BJT suitable for various applications.

Polarity or Channel Type: NPN

NPN configuration is widely used in switching applications, offering better performance in high-speed operations.

Configuration: SINGLE WITH BUILT-IN FET AND DIODE

The integrated FET and diode enhance functionality, allowing for more compact designs and reducing component count in circuits.

Transistor Application: SWITCHING

Optimized for switching applications, this BJT can handle rapid on/off transitions, suitable for various electronic control systems.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient space utilization on circuit boards, which is essential for modern electronic designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust connections and reliability in high-stress environments, making installation straightforward.

No. of Terminals: 4

Four terminals allow for versatile circuit configurations, ensuring adaptability for different applications and simplifies integration.

Maximum Power Dissipation (Abs): 46 W

With a high power dissipation capability, this BJT can operate effectively under demanding conditions, ensuring longevity and reliability.

Package Style (Meter): FLANGE MOUNT

Flange mount packaging provides secure mounting options, enhancing stability in applications where vibrations or movement are present.

Minimum DC Current Gain (hFE): 4

A minimum DC current gain of 4 indicates sufficient amplification for various applications, ensuring efficient operation in low-power scenarios.

Transistor Element Material: SILICON

Silicon as the primary material ensures a balance between performance, cost, and availability, making it ideal for commercial applications.

Maximum Collector Current (IC): 20 A

A maximum collector current of 20 A allows this device to handle significant loads, suitable for high-power applications.

Terminal Finish: TIN

Tin plating on terminals enhances corrosion resistance and ensures better electrical conductivity, contributing to overall reliability.

Terminal Position: SINGLE

With a single terminal position design, this BJT simplifies layout and integration in multi-device circuits, improving design efficiency.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STC20DE90HP attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

4

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T4

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STC20DE90HP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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