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STC20DE90HV

STMicroelectronics

STC20DE90HV by STMicroelectronics

STC20DE90HV by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max collector current of 20 A, a single configuration with built-in FET and diode, and comes in a flange mount package. Ideal for efficient power management in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,701 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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4,701

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-

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Vyrian

USA . 3,124 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,124

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-

-

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Anansix

USA . 1,047 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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1,047

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-

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,595 parts In-Stock

1+ parts

$1.116

100+ parts

-

1k+ parts

$1.004

10k+ parts

-

1,595

$1.116

-

$1.004

-

MKK Technologies

India . 1,453 parts In-Stock

1+ parts

$2.098

100+ parts

-

1k+ parts

-

10k+ parts

-

1,453

$2.098

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-

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DigiPath Technology Company

USA . 1,453 parts In-Stock

1+ parts

$2.098

100+ parts

-

1k+ parts

-

10k+ parts

-

1,453

$2.098

-

-

-

Corphita

USA . 4,141 parts In-Stock

1+ parts

-

100+ parts

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4,141

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-

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Parana Technologies

USA . 1,680 parts In-Stock

1+ parts

-

100+ parts

$1.334

1k+ parts

-

10k+ parts

-

1,680

-

$1.334

-

-

Overview

Unlock unparalleled performance with the STC20DE90HV from STMicroelectronics, an industry leader renowned for quality and innovation. This robust NPN power BJT is designed for efficient switching applications, providing superior reliability in demanding environments. With its compact flange mount design, it seamlessly integrates into your projects, delivering up to 20 A of collector current. Choose STMicroelectronics for enhanced durability, efficiency, and peace of mind in every application.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material ensures durability and resistance to environmental factors, making this BJT reliable for long-term use in various applications.

Polarity or Channel Type: NPN

An NPN configuration allows for effective signal amplification and switching capabilities, making this transistor suitable for numerous electronic applications.

Configuration: SINGLE WITH BUILT-IN FET AND DIODE

The integrated FET and diode enhance versatility and reduce component count in designs, simplifying circuit layouts and increasing efficiency.

Transistor Application: SWITCHING

Optimized for switching applications, this BJT can handle rapid on-off cycles, making it ideal for power management and control functions.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient space utilization on PCBs, providing ease of integration in compact designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical connections, which are beneficial in high-power applications where reliability is critical.

No. of Terminals: 4

Having 4 terminals enhances functionality, enabling more complex circuit designs while maintaining a simple interface for integration.

Package Style (Meter): FLANGE MOUNT

Flange mount design offers secure mounting options, ensuring stability and heat dissipation in high-current applications.

Transistor Element Material: SILICON

Silicon as the semiconductor material ensures excellent performance in terms of thermal stability and operation in a wide temperature range.

Maximum Collector Current (IC): 20 A

With a maximum collector current of 20 A, this BJT can handle substantial power levels, making it suitable for high-current applications.

Terminal Finish: TIN

Tin terminal finish offers good corrosion resistance and solderability, ensuring reliable connections during assembly and in the field.

Terminal Position: SINGLE

A single terminal position simplifies layout designs, providing ease of placement and reducing the risk of misconnection.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STC20DE90HV attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T4

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STC20DE90HV Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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